PRODUCT GUIDE

Discrete IGBTs
2007-3
2
C
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c
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M
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T
A
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p
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p+
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n
G
A
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D
IN
G
P
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p
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p
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p p p
n
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n
+
n

Rn- (MOD) Rn- (MOD)

Collector
Emitter
Gate
Emitter
Gate
Collector
Electrode
Collector
Emitter
Gate
Collector
Emitter
Gate
Features of the Toshiba Discrete IGBTs
Construction
IGBT: Insulated Gate Bipolar Transistor
Equivalent Circuit
The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in
inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible
power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.
(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages
The basic structure of the planar IGBT consists of four layers (pnpn), as shown in the following figure.
Low saturation voltage is achieved by using a pnp transistor to allow conductivity modulation during
conduction. Unlike a MOSFET, the IGBT does not have an integral reverse diode, since the collector
contact is mede on the p
+
layer.
1
Structure Structure Equivalent Circuit
Features and Structure
1
IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
advantage of high-voltage drive.
The conductivity modulation characteristics of a bipolar transistor make it ideal for load control
applications that require high breakdown voltage and high current.
Toshiba offers a family of fast switching IGBTs, which are low injection and recombination in the
carrier.
3
3.5
3
2.5
2
1.5
0 0.1 0.2 0.3 0.4 0.5
Ta = 25C
tf (s) (Toshiba standard)
V
C
E
(
s
a
t
)

(
V
)

(
T
o
s
h
i
b
a

s
t
a
n
d
a
r
d
)
4th Gen. GT60M303
0.25 (s), 2.1 (V) Typ.
5th Gen. GT60M323
0.09 (s), 2.3 (V) Typ.
1200 V
900 V
600 V
400 V
300 to
400 V
(1) High breakdown voltage (3rd generation): low VCE(sat) and high ruggedness due to optimized carrier injection and reduced wafer thickness
(2) Soft switching (5th generation): improved tradeoff between VCE(sat) and tf due to adoption of the trench gate structure
(2) Soft switching (5th generation): optimized wafers and design rules
(1) Soft switching (4th generation): improved tradeoff between VCE(sat) and tf due to adoption of the trench gate structure
(1) High breakdown voltage (3rd generation): low VCE(sat) and high ruggedness due to fine process geometries (up to 20 kHz)
(3) Soft switching (4th generation): improved tradeoff between VCE(sat) and tf due to adoption of the trench gate structure
(2) Fast switching (FS): trench gate structure and carrier injection optimization (up to 50 kHz)
(1) Strobe flash (4th generation): trench gate structure and reduced gate drive voltage (4-V drive voltage, Icp = 150 A, package: SOP-8)
(2) Strobe flash (5th generation) : Optimized wafers and design rules
Aluminum strap bonding technology (4-V drive voltage, Icp = 200 A, package: SOP-8)
Low-profile package (3-V drive voltage, Icp = 150 A, package: TSSOP-8)
(1) Plasma display panel (PDP): Low losses due to optimized wafer design
(2) New package structure (Cu connectors)
(3) Low losses due to submicron
process technology
2000 2002 2004 2006 2008
Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which
require high input impedance and fast switching. However, at high voltages, the on-state resistance
rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss
of power MOSFETs.
On the other hand, the IGBT structures a PNP bipolar transistor and a collector contact made on the p
+
layer. The IGBT has a low on-state voltage drop due to conductivity modulation.
The following figure shows the VCE(sat) curve of a soft-switching 900-V IGBT. Toshiba offers IGBTs
featuring low saturation voltage and fast switching by using carrier lifetime control techniques.
In the future, Toshiba will launch IGBTs with varied characteristics optimized for high-current-conduction
and high-frequency-switching applications. The improvements in IGBTs will be spurred by optimized
wafers, smaller pattern geometries and improved carrier lifetime control techniques.
Soft-Switching 900-V IGBT (Example) Soft-Switching 900-V IGBT (Example)
Discrete IGBT Development Trends
2
IGBT Technical Overview
2
4
TO-220NIS TO-220SIS DP TO-220FL TO-220SM TO-220AB TO-3P(N) TO-3P(N)ISTO-3P(LH) SOP-8 TSSOP-8
Straight
Leads
Formed
Leads
Version
Serial number
1: N-channel
2: P-channel
3: N-channel with built-in
freewheeling diode
Voltage rating (see Table 1.)
Collector current rating (DC)
Discrete IGBT
Table 1
C
D
E
F
G
H
J
K
L
150
200
250
300
400
500
600
700
800
M
N
P
Q
R
S
T
U
V
900
1000
1100
1200
1300
1400
1500
1600
1700
GT 60 M 3 03 A
3
Discrete IGBT Product List 3
4
Part Numbering Scheme 4
IGBT Current
Rating Ic(A)
@Ta = 25C
DC Pulse
Breakdown
Voltage
VCES(V)
@Ta = 25C
Applications and
Features
600
1200
600
600
400
600
900
1000
1050
1200
1500
600
400
300
400
5
10
15
20
30
50
10
15
25
10
15
20
30
50
15
40
50
30
37
50
60
80
15
60
50
57
60
60
39
42
40
30
10
20
30
40
60
100
20
30
50
20
30
40
60
100
30
100
100
100
100
100
120
120
160
30
120
120
120
120
120
80
80
80
100
130
150
170
200
120
140
120
GT8G133
GT8G136
GT10G131
GT5G131
GT8G132
GT5G103
GT8G103
GT5J301
GT10J303
GT15J301
GT10J321
GT15J321
GT20J321
GF30F121
GF30F122
GT30F121
GT30F122
GT25G101
GT5J311
GT10J312
GT15J311
GT15J331
GT25G101
GT40G121
GT35F131
GT30G131
GT10J301
GT20J301
GT20J101
GT30J301
GT30J101
GT10Q301
GT10Q101
GT15Q301
GT15Q102
GT30J324
GT30J121
GT50J327
GT50J122
GT50N321
GT40Q323
GT40Q321
GT30J322
GT35J321
GT15M321
GT30J122
GT50J301
GT50J102
GT25Q301
GT25Q102
GT50J325
GT50J121
GT50G321
GT50J322
GT50J322H
GT60J321
GT60J323
GT60J323H
GT80J101B
GT60M303
GT60M323
GT60N322
GT60N321
GT60N323
GT40T301
Hard-switching
series
Highly rugged products
fc: up to 20 kHz
Hard-switching
series
Fast-switching (FS)
series
fc: up to 50 kHz
General-purpose inverters
Low-V
CE(sat)
IGBT
Soft-switching
series
Strobe flash
Plasma display
panels
PFC
Letter Voltage (V) Voltage (V) Letter Example
5
VCE
Ic
t : 0.1s/div
V
C
E
:

1
0
0

V
/
d
i
v
I
C
:

1
0

A
/
d
i
vGT50J301
MOSFET
GT50J301
MOSFET
80
60
40
20
0
0 4 8 12 16 20 24
Carrier Frequency fC (kHz)
L
o
s
s

(
W
/
T
r
)
MOSFET
GT50J301
GT50J301:
Ta = 25C
Ta = 125C
MOSFET (500 V / 50 A):
Ta = 25C
Ta = 125C
GT50J301:
Ta = 25C
Ta = 125C
MOSFET (500 V / 50 A):
Ta = 25C
Ta = 125C
@VGE = 15 V
@ Ta = 125C
VCC = 300 V
VGE = + 15 V
di/dt 400 A/s
@fo = 50 Hz
Po = 7.5 kW
50
40
30
20
10
0
0 2 4 6 8 10
Collector - Emitter Voltage, VCE (V)
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
,

I
C

(
A
)
GT50J301
MOSFET
Control
PL PL
Inverter
Rectifier
circuit
Input
Output
CB
IC - VCE Temperature Characteristics Turn-On Waveform
Power Loss vs. Carrier Frequency Characteristics
Our third-generation low-loss and low-noise IGBTs are ideal for inverter applications to reduce switching loss and thus
improve energy efficiency. The following graphs compare the thermal and turn-on characteristics of our third-generation
IGBTs and 500-V MOSFETs
The fast-switching (FS) series, a new addition to our third-generation IGBTs features high ruggedness which
helps to improve the energy efficiency of electronic equipment.
Low saturation voltage with minimal temperature dependence
Simulation data for inverter applications
Superior reverse-recovery characteristics due to built-in diode
with optimal characteristics
IC - VCE Temperature Characteristics Turn-On Waveform
Power Loss vs. Carrier Frequency Characteristics
5
-1 5
-1
Hard-Switching Applications
Highly Rugged IGBTs Hard-switching series
General-Purpose
Inverters
Inverter Air
Conditioners
Inverter Washing
Machines
UPS
6
GT20J321(FS)
Ta = 25C
Ta = 125C
GT20J301(3rd generation)
(LOSS: 0.5 mJ/div)
(VCE: 50 V/div, IC: 5 A/div, VGE: 10 V/div, LOSS: 0.2 mJ/div, t: 0.2 s/div)
GT20J321
Fast-switching
IGBT
GT20J301
Highly rugged
IGBT
VGE
VCE
LOSS
IC IC
VGE
VCE
LOSS
IC IC
VGE
VCE
LOSS
IC IC
VGE
VCE
LOSS
IC IC
Eon = 0.6 mJ
Eoff = 0.47 mJ
Eon = 0.95 mJ
Eoff = 0.56 mJ
Eon = 1.1 mJ
Eoff = 1.0 mJ
Eon = 0.9 mJ
Eoff = 0.54 mJ
1.1mJ 0.9 mJ
GT20J321
Fast-switching
IGBT
GT20J301
Highly rugged
IGBT
1.0 mJ 0.54 mJ 1.1mJ 0.9 mJ 1.0 mJ 0.54 mJ
Typical Waveforms
Turn-On Loss Turn-Off Loss
Compared to the hard-switching series, the FS series is optimized for switching speed, reducing the total switching
loss (Eon + Eoff) by 30% (according to Toshibas comparative test).
Reduced switching loss of fast-switching IGBTs in comparison with highly rugged IGBTs
Test condition: IC = 20 A, VGE = 15 V, RG = 33 , Ta = 125C, with inductive load, VCC = 300 V
Typical Waveforms
Turn-On Loss Turn-Off Loss
Fast-Switching (FS) Series Hard-switching series
7
Typical Built-in FRD
Gate
Collector
Emitter
Gate
Collector
Emitter
600-V and 1200-V Highly Rugged Series (3rd Generation)
600-V Fast-Switcing Series (4th Generation)
GT10Q101
GT10Q301
GT15Q102
GT15Q301
GT25Q102
GT25Q301
GT5J301
GT5J311
GT10J301
GT10J303
GT10J312
GT15J301
GT15J311
GT15J311
GT20J101
GT20J301
GT30J101
GT30J301
GT50J102
GT50J301
GT30J122
1200
1200
1200
1200
1200
1200
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-3P(LH)
TO-3P(LH)
TO-220NIS
TO-220SM
TO-3P(N)
TO-220NIS
TO-220SM
TO-220NIS
TO-220FL
TO-220SM
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-3P(LH)
TO-3P(LH)
TO-3P(N)IS
10
10
15
15
25
25
5
5
10
10
10
15
15
15
20
20
30
30
50
50
30
20
20
30
30
50
50
10
10
20
20
20
30
30
30
40
40
60
60
100
100
100
140
140
170
170
200
200
28
45
90
30
60
35
70
70
130
130
155
155
200
200
75
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
10
10
15
15
25
25
5
5
10
10
10
15
15
15
20
20
30
30
50
50
50
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
0.16
0.16
0.16
0.16
0.16
0.16
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.25
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
R
-
-
-
-
-
-
-
SMD
-
-
SMD
-
-
SMD
-
-
-
-
-
-
-
1 : Typical ciruit configuration
2 R : Resistive load
L : Inductive load
(FS: Fast Switching)
Absolute Maximum Ratings
Package
VCE(sat) Typ. tf Typ.
Main
Applications
Features Remarks Part Number
Circuit
Configuration
(1)
Load
(2)
IC
DC
(A)
Pulse
(A)
PC
@VGE @IC
Tc = 25C
(W) Type
VCES
(V) (A) (V) (s) (V)
GT10J321
GT15J321
GT15J331
GT20J321
GT30J121
GT30J324
GT50J121
GT50J325
600
600
600
600
600
600
600
600
TO-220NIS
TO-220NIS
TO-220SM
TO-220NIS
TO-3P(N)
TO-3P(N)
TO-3P(LH)
TO-3P(LH)
10
15
15
20
30
30
50
50
20
30
30
40
60
60
100
100
29
30
70
45
170
170
240
240
2.0
1.9
1.75
2.0
2.0
2.0
2.0
2.0
10
15
15
20
30
30
50
50
15
15
15
15
15
15
15
15
0.05
0.03
0.10
0.04
0.05
0.05
0.05
0.05
L
L
L
L
L
L
L
L
Low VCE(sat)
Intended for
partial-switch
-
-
SMD
-
-
-
-
-
Built-in FRD
Built-in FRD
Built-in FRD
Built-in FRD

Built-in FRD

Built-in FRD
Absolute Maximum Ratings
Package
VCE(sat) Typ. tf Typ.
Main
Applications
Features Remarks Part Number
Circuit
Configuration
(1)
Load
(2)
IC
DC
(A)
Pulse
(A)
PC
@VGE @IC
Tc = 25C
(W) Type
VCES
(V) (A) (V) (s) (V)
Circuit Configuration
Product list for Hard-Switching Applications Hard-switching series
M
o
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(
1
2
0
0
V
)
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r
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(
6
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Built-in FRD

Built-in FRD

Built-in FRD
Built-in FRD
Built-in FRD
Built-in FRD
Built-in FRD
Built-in FRD
Built-in FRD
Built-in FRD
Built-in FRD

Built-in FRD

Built-in FRD

Built-in FRD

I
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e
r
t
e
r

p
o
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s
u
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p
l
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8
VCE
IC
VCE
IC
VCE
IC
VCE
IC
AC Input Voltage Circuit IGBT Rating
100 V to 120 V
200 V to 240 V
100 V to 240 V
VCES = 900 V to 1000 V
IC = 15 A to 60 A
VCES = 600 V
IC = 30 A to 80 A
VCES = 400 V
IC = 40 A to 50 A
VCES = 1200 V to 1500 V
IC = 40 A
Voltage Resonance Waveform
Current Resonance Waveform
Static inverters in IH cooktops, IH rice cookers and microwave ovens utilize a
soft-switching technique which exhibits low switching loss. Toshiba offers IGBTs suitable
for soft-switching applications.
Microwave Ovens IH Rice Cookers
IH Cooktops MFP
5
-2 5
-2
Soft-Switching Applications
IH: Induction heating
MFP: Multifunction Printer
9
Gate
Collector
Emitter
Gate
Collector
Emitter
IGBTs for Soft-Switching
GT40G121
GT50G321
GT30J322
GT35J321
GT50J322
GT50J322H
GT50J327
GT60J321
GT60J323
GT60J323H
GT15M321
GT60M303
GT60M323
GT50N321
GT60N321
GT60N322
GT60N323
GT40Q321
GT40Q323
GT40T301
400
600
900
1000
1050
1200
1500
TO-220AB
TO-3P(LH)
TO-3P(N)IS
TO-3P(LH)
TO-3P(N)
TO-3P(LH)
TO-3P(N)IS
TO-3P(LH)
TO-3P(N)
TO-3P(LH)
TO-3P(N)
TO-3P(N)
TO-3P(LH)
40
50
30
37
50
50
50
60
60
60
15
60
60
50
60
57
60
40
39
40
80
100
60
100
100
100
100
120
120
120
30
120
120
120
120
120
120
80
80
80
100
130
75
75
130
130
140
200
170
170
55
170
200
156
170
200
190
170
200
200
AC 100 V
AC 200 V
AC 100 V
AC 200 V
1.8
1.8
2.1
1.9
2.1
2.2
1.9
1.55
1.9
2.1
1.8
2.1
2.3
2.5
2.3
2.4
2.6
2.8
3.0
3.7
40
50
50
50
50
50
50
60
60
60
15
60
60
60
60
60
60
40
40
40
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
0.30
0.30
0.25
0.19
0.25
0.16
0.19
0.30
0.16
0.12
0.20
0.25
0.09
0.25
0.25
0.11
0.22
0.41
0.14
0.25
R

Built-in FRD
Built-in FWD
Fast switching
Fast switching
Fast switching
Fast switching
1 : Typical ciruit configuration
2 R: Resistive load
L: Inductive load
FRD: Fast Recovery Diode
FWD: Free Wheeling Diode
Absolute Maximum Ratings
Package
VCE(sat) Typ. tf Typ.
Main
Applications
Features Remarks Part Number
Circuit
Configuration
(1)
Load
(2)
IC
DC
(A)
Pulse
(A)
PC
@VGE @IC
Tc = 25C
(W)
VCES
(V) (A) (V) (s) (V)
Product List for Soft-Switching Applications Soft-switching series
AC100-120V
Circuit Configuration Built-in FRD Typical
I
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10
Comparisons Between Hard and Soft Switching (diagrams shown only as a guide)
Strobe flash control is now prevalent in digital still cameras. Package sizes are getting smaller, and logic
levels are increasingly used to represent the gate drive voltage. Toshiba offers compact IGBTs featuring
low gate drive voltage.
As a voltage-controlled device, the IGBT requires low drive power dissipation.
IGBTs help reduce the number of components required for the strobe flash circuit. (compared with SCRs)
Strobe flash IGBTs are capable of switching large currents.
Single-Lens
Reflex Camera
Comparisons Between Hard and Soft Switching (diagrams shown only as a guide)
DSC, Compact Camera
5
-3 5
-3
Strobe Flash Applications
Hard Switching
SOA Locus for Hard Switching
Switching Characteristics
(Example)
SOA
IC
IC
IC
VCE
VCE
VCE
High-current,
high-voltage
locus
Soft Switching
SOA Locus for Soft Switching
SOA
IC
VCE
High-current,
low-voltage and
low-current,
high-voltage locus
Thermal resistance Limit area
S/B Limit area
Current Resonance
(Example)
IC
VCE
Voltage Resonance
(Example)
11
20 k
P-ch
N-ch
SSM6L05FU
910
91
2SC4738FT
1.2 k
470
3.3-V
power supply
3 V
0
Trigger transformer
Xe lamp
Resistor
Main
Capacitor
Resonant capacitor
IGBT
GT8G136
Example of an IGBT Gate Drive Circuit (3.3-V Power Supply)
GT5G103
GT8G103
GT8G132
GT8G133
400 V / 130 A
400 V / 150 A
400 V / 150 A
400 V / 150 A
8
8
7
7
1.3
1.3
1.1
1.1
4.5 V / 130 A
4.5 V / 150 A
4.0 V / 150 A
4.0 V / 150 A
DP
DP
SOP-8
TSSOP-8
3th generation
3th generation
5th generation
5th generation
3-V to 4.5-V Gate Drive Series
The IGBT can operate with a gate drive voltage of 3 V to 4.5 V. The common 3.3-V or 5-V internal power supply in a
camera can be used as a gate drive power supply to simplify the power supply circuitry. A zener diode is included
between the gate and emitter to provide ESD surge protection.
VCES / IC
(V) VGE / IC
PC (W)
@Ta = 25C
GT25G101 400V / 170 A 8 1.3 20 V / 170 A TO-220FL
20-V Gate Drive Series
VCES / IC
(V) VGE / IC
PC (W)
@Ta = 25C
GT5G131 400 V / 130 A 7 1.1 3 V / 130 A SOP-8
3-V Gate Drive Series
VCE(sat) Max
VCE(sat) Max
VCE(sat) Max
(V) VGE / IC
PC (W)
@Ta = 25C
4-and 4.5-V Gate Drive Series
GT8G136 400 V / 150 A 7 1.0 3 V / 150 A TSSOP-8 5th generation
Example of an IGBT Gate Drive Circuit (3.3-V Power Supply)
Product List for Strobe Applications Strobe flash applications
5th generation
VCES / IC Package Remarks Part Number
Package Remarks Part Number
Package Remarks Part Number
12
Vsus
Vsus
C1
C2
PDP (Sustain circuit)
Separation
circuit
Sustain
circuit
Power recovery
circuit
Xsus. circuit
Ysus. circuit
X terminal (X sus output)
Panel
Y terminal (Y sus output)
Example of a Plasma Display Panel Power Supply
GT35F131
GT30F121
GT30F122
300 V / 140 A
300 V / 120 A
300 V / 120 A
60
35
25
3.4 (@140 A)
2.9 (@120 A)
2.9 (@120 A)
TO-220AB
TO-220SIS
TO-220SIS
300-V Series
VCES / Icp @100 s VCE(sat) Max (V)
PC (W)
@Ta = 25C
GT30G131
GT30G121
GT30G122
400 V / 120 A
400 V / 120 A
400 V / 120 A
60
35
25
3.2 (@120 A)
2.9 (@120 A)
2.6 (@120 A)
TO-220AB
TO-220SIS
TO-220SIS
400-V Series
VCES / Icp @100 s VCE(sat) Max (V)
PC (W)
@Ta = 25C
Previously, MOSFETs were used for the power supplies of
plasma display panels (PDPs). Recently, however, MOSFETs
are being replaced by IGBTs, which have lower V
CE(sat)
in a
large current area.
Example of a Plasma Display Panel Power Supply
Plasma Display
5
-4 5
-4
Plasma Display Panel Applications
Product List for Plasma Display Panel Applications Plasma display panel series
Package Remarks Part Number
Package Remarks Part Number
13
1, 2, 3. Emitter
4. Gate
5, 6, 7, 8. Collector
1. Gate
2. Collector
3. Emitter
1. Gate
2. Collector
3. Emitter
1. Gate
2. Collector
3. Emitter
1. Gate
2. Collector
3. Emitter
1, 2, 3. Emitter
4. Gate
5, 6, 7, 8. Collector
Unit: mm
3.0 0.1
0
.
8
5

0
.
0
5
4
.
4

0
.
1
0.25 0.05
6
.
4

0
.
3
3.3 max
0
.
0
5

0
.
0
5
0
.
1
6
+
0
.
0
4
-
0
.
0
2
0.6 0.2
0.65
(0.525)
5 8
1 4
0.05
6.8 max
5.2 0.2
2
.
0

m
a
x
5
.
5

0
.
2
1
2
.
0

m
a
x
2.3
0.95 max
0.6 0.15 0.6 max
0.6 max
1
.
1

0
.
2
2
.
5

m
a
x
1 2 3
2.3
1
.
5

0
.
2
6.8 max
5.2 0.2 2
.
0

m
a
x
5
.
5

0
.
2
2
.
5
2.3
0.95 max
0.6 0.15
0.6 max
0.6 max
1
.
1

0
.
2
0
.
1

0
.
1
1 2 3
0.6 0.15
2.3 1.6 0.2
2
.
5

m
a
x
0
.
9
10 0.3 3.2 0.2 2.7 0.2
3
.
0
3
.
9
1
5

0
.
3
1
3
.
0

m
i
n
1.1
1.1
0.75 0.15
2.54 0.25 2.54 0.25
5
.
6

m
a
x
1 2 3
0
.
7
5

0
.
1
5
2
.
6
4
.
5

0
.
2
6
.
0

0
.
3
4
.
4

0
.
2
0.4 0.1
8 5
1 4
0.25 M
1.27
0
.
1
+

0
.
1

0
.
0
5
0
.
1
5
+

0
.
1

0
.
0
5
0.595 typ.
0.5 0.2
5.5 max
5.0 0.2
1
.
5

0
.
2

0.1
10 0.3 2.7 0.2
0.69 0.15
2.54 2.54
3.2 0.2
1
5

0
.
3
0
.
6
4

0
.
1
5
2
.
6

0
.
1
4
.
5

0
.
2
1
3

0
.
5
2
.
8

m
a
x
3
.
0
3
.
9
1 2 3
1.14 0.15
0.25 M A
TSSOP-8
DP (Straight Leads)
TO-220NIS
SOP-8
DP (Bend Leads)
TO-220SIS
6
Package Dimensions 6
14
1. Gate
2. Collector
3. Emitter
1. Gate
2. Collector
3. Emitter
1. Gate
2. Collector
3. Emitter
1. Gate
2. Collector
3. Emitter
10.3 max
1
.
5
2.54
0.76
9
.
1
1
0
.
6

m
a
x
3

0
.
2
1.32
1 2 3
2
.
6
4
.
7

m
a
x
0
.
5
2.54
1
.
5
0.1
0
.
6
2
.
0
3
.
3

m
a
x
2.0 0.3
1.0 0.25
+ 0.3
5.45 0.2 5.45 0.2
2
0
.
5

0
.
5
2
0
.
0

0
.
3
9
.
0
2
.
0
4
.
5
1
.
0
3.2 0.2 15.9 max
0
.
6

0
.
1
+

0
.
3
1
.
8

m
a
x
2
.
8
4
.
8

m
a
x
1 2 3
5.45 0.2
1
5
.
5
5
.
5
2
1
.
0

0
.
5
5
.
0

0
.
3
1
.
0
3 2 1
1
9
.
4

m
i
n
3
.
6

m
a
x
15.8 0.5
3.5
+ 0.2
0.1
3.6 0.2
5.45 0.2
1.0
2.0
+ 0.25
0.15
0
.
6
+

0
.
2
5

0
.
1
5
3.15
20.5 max 3.3 0.2
6
.
0
1
1
.
0
2
.
0
4
.
0
2
6
.
0

0
.
5
2
.
5
0
2.5
3.0
1.0 0.25
+ 0.3
5.45 0.15 5.45 0.15
0
.
6

0
.
1
0
+

0
.
2
5
1 2 3
2
.
8
5
.
2

m
a
x
2
0
.
0

0
.
6
1
.
5
1.5
2
.
0
1
.
5
1. Gate
2. Collector
3. Emitter
1. Gate
2. Collector
3. Emitter
10.3 max 1.32
1.3
1 2 3
0.76
3
.
0
2
.
5

m
a
x
1
2
.
6

m
i
n
1
5
.
7

m
a
x
6
.
7

m
a
x
3.6 0.2
2.54 0.25 2.54 0.25
0.5
2.6
4
.
7

m
a
x
10.3 max
2
.
5

m
a
x
1.6 max
0.76
2.54 0.25 2.54 0.25
9
.
1
1
0
.
6

m
a
x
1
2
.
6

m
i
n
1.32
1 2 3
2
.
6
4
.
7

m
a
x
0
.
5
Unit: mm
TO-220AB
TO-220SM
TO-3P(LH)
TO-220FL
TO-3P(N)
TO-3P(N)IS
15
The following products are in stock but are being phased out of production. The recommended replacements that
continue to be available are listed in the right-hand column. However, the characteristics of the recommended
replacements may not be exactly the same as those of the final-phase and obsolete products. Before using a
recommended replacement, be sure to check that it is suitable for use under the intended operating conditions.
VCES (V) VCES (V)
7
Final-Phase and Obsolete Products 7
MG30T1AL1
MG60M1AL1
GT40M101
GT40M301
GT40T101
GT50L101
GT50M101
GT50Q101
GT50S101
GT50T101
GT60J101
GT60J322
GT60M101
GT60M102
GT60M103
GT60M104
GT60M105
GT60M301
GT60M302
GT60M305
GT60M322
GT80J101
GT80J101A
GT8J101
GT8J102
GT8N101
GT8Q101
GT8Q102
GT10Q311
GT15J101
GT15J102
GT15J103
GT15N101
GT15Q101
GT15Q311
GT20J311
GT25H101
GT25J101
GT25J102
GT25Q101
GT30J311
GT50J101
GT5G101
GT5G102
GT8G101
GT8G102
GT10G101
GT10G102
GT15G101
GT20G101
GT20G102
GT25G102
GT50G101
GT50G102
GT75G101
GT20D101
GT20D201
GT40T301
GT60M303

GT60M303
GT40T301
GT60M303
GT60M303
GT40T301
GT40T301
GT40T301
GT80J101B
GT60J321
GT60M303
GT60M303
GT60M303
GT60M303
GT60M303
GT60M303
GT60M303
GT60M303
GT60N321
GT80J101B
GT60J321
GT80J101B
GT10J303
GT10J312
GT10Q101
GT10Q101


GT20J101
GT15J301
GT15J311
GT15Q102
GT15Q102


GT30J101
GT30J121
GT30J121
GT25Q102

GT50J121
GT5G103
GT5G103
GT5G103
GT8G103

GT25G101
GT25G102
GT25G101
GT25G101
GT8G103
GT8G103
GT25G101
GT8G103
GT25G101


IH
IH
TO-3P(N)IS
TO-3P(LH)
TO-3P(LH)
TO-3P(L)
TO-3P(L)
IH
IH
IH
TO-3P(L)
TO-3P(LH)
TO-3P(L)
TO-3P(L)
TO-3P(L)
TO-3P(L)
TO-3P(L)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(L)
TO-3P(LH)
TO-220NIS
TO-220SM
TO-3P(N)
TO-3P(N)
TO-220SM
TO-3P(SM)
TO-3P(N)
TO-220NIS
TO-220SM
TO-3P(N)
TO-3P(N)
TO-3P(SM)
TO-3P(SM)
TO-3P(N)
TO-3P(N)
TO-3P(N)IS
TO-3P(LH)
TO-3P(SM)
TO-3P(L)
NPM
DP
NPM
NPM
TO-220NIS
TO-220NIS
TO-220NIS
TO-220FL
TO-220FL
TO-220FL
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-3P(L)
TO-3P(L)
TO-3P(LH)
TO-3P(LH)

TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-3P(LH)
TO-220NIS
TO-220SM
TO-3P(N)
TO-3P(N)

TO-3P(N)
TO-220NIS
TO-220SM
TO-3P(N)
TO-3P(N)

TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-3P(LH)

TO-3P(LH)
DP
DP
DP
DP

TO-220FL
TO-220FL
TO-220FL
TO-220FL
DP
DP
TO-220FL
DP
TO-220FL

1500
900
900
900
1500
800
900
1200
1400
1500
600
600
900
900
900
900
900
900
900
900
950
600
600
600
600
1000
1200
1200
1200
600
600
600
1000
1200
1200
600
500
600
600
1200
600
600
400
400
400
400
400
400
400
400
400
400
400
400
400
250
250
30
60
40
40
40
50
50
50
50
50
60
60
60
60
60
60
60
60
60
60
60
80
80
8
8
8
8
8
10
15
15
15
15
15
15
20
25
25
25
25
30
50
130 (pulse)
130 (pulse)
130 (pulse)
150 (pulse)
130 (pulse)
130 (pulse)
170 (pulse)
130 (pulse)
130 (pulse)
150 (pulse)
100 (pulse)
100 (pulse)
150 (pulse)
20
20
40
60

60
40
60
60
40
40
40
60
60
60
60
60
60
60
60
60
60
60
80
60
80
10
10
10
10

20
15
15
15
15

30
30
30
25

50
130 (pulse)
130 (pulse)
130 (pulse)
150 (pulse)

170 (pulse)
150 (pulse)
170 (pulse)
170 (pulse)
150 (pulse)
150 (pulse)
170 (pulse)
150 (pulse)
170 (pulse)

1500
900

900
1500
900
900
1500
1500
1500
600
600
900
900
900
900
900
900
900
900
1000
600
600
600
600
600
1200
1200

600
600
600
1200
1200

600
600
600
1200

600
400
400
400
400

400
400
400
400
400
400
400
400
400

Soft-switching
applications
Hard-switching
applications
Strobe flash
applications
Audio amp
applications
Application Package Package
Final-Phase or
Obsolete Product
Recommended
Obsolete Replacements
Absolute Maximum Ratings
IC (A) DC
Absolute Maximum Ratings
IC (A) DC
The information contained herein is subject to change without notice. 021023_D
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical
sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire
system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs,
please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions
and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. 021023_A
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a
malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customers own risk. 021023_B
The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and
regulations. 060106_Q
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of
the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. 070122_C
Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all
applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with
applicable laws and regulations. 060819_Z
BCE0010D
Previous edition: BCE0010C
2007-3(0.3k)PC-DQ
2007
D
i
s
c
r
e
t
e

I
G
B
T
s
2007-3
Website: http://www.semicon.toshiba.co.jp/eng
Semiconductor Company
(As of February 23, 2006) OVERSEAS SUBSIDIARIES AND AFFILIATES
Toshiba America
Electronic Components, Inc.
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1
a
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Tel: (04)226-8523 Fax: (04)226-8515
Toshiba Electronics Philippines, Inc.
26th Floor, Citibank Tower, Valero Street, Makati,
Manila, Philippines
Tel: (02)750-5510 Fax: (02)750-5511
Toshiba Electronics Asia, Ltd.
Hong Kong Head Office
Level 11, Tower 2, Grand Century Place, No.193,
Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: 2375-6111 Fax: 2375-0969
Beijing Office
Room 714, Beijing Fortune Building, No.5 Dong San Huan Bei-Lu,
Chao Yang District, Beijing, 100004, China
Tel: (010)6590-8796 Fax: (010)6590-8791
Chengdu Office
Room 2508A, 2 Zongfu Street, Times Plaza,
Chengdu 610016 Sichuan, China
Tel: (028)8675-1773 Fax: (028)8675-1065
Qingdao Office
Room 4(D-E), 24F, International Financial Center,
59 Xiang Gang Zhong Road, Qingdao, Shandong, China
Tel: (0532)579-3328 Fax: (0532)579-3329
Toshiba Electronics Shenzhen Co., Ltd.
Room 2601-2609, 2616, Office Tower Shun Hing Square,
Di Wang Commercial Center, 5002 Shennan Road East,
Shenzhen, 518008, China
Tel: (0755)2583-0810 Fax: (0755)8246-1581
Toshiba Electronics (Shanghai) Co., Ltd.
Shanghai Head Office
11F, HSBC Tower, 1000 Lujiazui Ring Road,
Pudong New Area, Shanghai 200120, China
Tel: (021)6841-0666 Fax: (021)6841-5002
Hangzhou Office
502 JiaHua International Business Center,
No.28 HangDa Road, Hangzhou, 310007, China
Tel: (0571)8717-5004 Fax: (0571)8717-5013
Nanjing Office
23F Shangmao Century Plaza,
No.49 Zhong Shan South Road, Nanjing, 210005, China
Tel: (025)8689-0070 Fax: (025)8689-0125
Toshiba Electronics (Dalian) Co., Ltd.
14/F, Senmao Building, 147, Zhongshan Road,
Xigang Dist., Dalian, 116011, China
Tel: (0411)8368-6882 Fax: (0411)8369-0822
Tsurong Xiamen Xiangyu Trading Co., Ltd.
14G, International Bank BLDG., No.8 Lujiang Road,
Xiamen, 361001, China
Tel: (0592)226-1398 Fax: (0592)226-1399
Toshiba Electronics Korea Corporation
Seoul Head Office
891, Samsung Life Insurance Daechi Tower 20F, Daechi-dong,
Gangnam-gu, Seoul, 135-738, Korea
Tel: (02)3484-4334 Fax: (02)3484-4302
Gumi Office
6F, Goodmorning Securities Building, 56 Songjung-dong,
Gumi-shi, Kyeongbuk, 730-090, Korea
Tel: (054)456-7613 Fax: (054)456-7617
Toshiba Electronics Taiwan Corporation
Taipei Head Office
17F, Union Enterprise Plaza Building, 109
Min Sheng East Road, Section 3, Taipei, 10544, Taiwan
Tel: (02)2514-9988 Fax: (02)2514-7892
Kaohsiung Office
16F-A, Chung-Cheng Building, 2, Chung-Cheng 3Road,
Kaohsiung, 80027, Taiwan
Tel: (07)237-0826 Fax: (07)236-0046