STPS20L45C

Low drop power Schottky rectifier

Main product characteristics A1

K
A2
IF(AV) 2 x 10 A
VRRM 45 V
Tj (max) 150° C
VF(max) 0.5 V
A2
Features and benefits K
K
A2
A1
A1
■ Low forward voltage drop meaning very small
conduction losses TO-220FPAB TO-220AB
STPS20L45CFP STPS20L45CT
■ Low switching losses allowing high frequency
operation
■ Insulated package: TO-220FPAB K
Insulating voltage = 2000 V DC
Capacitance = 12 pF
■ Avalanche capability specified A2
A1

Description D2PAK
Dual center tap Schottky rectifiers designed for STPS20L45CG
high frequency switched mode power supplies
and DC to DC converters.
These devices are intended for use in low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.

March 2007 Rev 4 1/9

www.st.com 9
Characteristics STPS20L45C

1 Characteristics

Table 1. Absolute Ratings (limiting values)

Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 45 V
IF(RMS) RMS forward voltage 30 A
Tc =135° C Per diode 10
TO-220AB / D2PAK A
Average forward δ = 0.5 Per device 20
IF(AV)
current Tc = 115° C Per diode 10
TO-220FPAB A
δ = 0.5 Per device 20
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 180 A
IRRM Peak repetitive reverse current tp = 2 µs square F = 1 kHz 1 A
IRSM Non repetitive peak reverse current tp = 100 µs square 2 A
PARM Repetitive peak avalanche power tp = 1 µs Tj = 25°C 4000 W
Tstg Storage temperature range -65 to + 150 °C
Tj Maximum operating junction temperature (1) 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
1.
dPtot
---------------
dTj
< 1
--------------------------
Rth ( j – a )
condition to avoid thermal runaway for a diode on its own heatsink

Table 2. Thermal resistances

Symbol Parameter Value Unit
Per diode 4.5
Rth(j-c) Junction to case TO-220FPAB Total 3.5 °C/W
Coupling 2.5
Per diode 2.2
Rth(j-c) Junction to case TO-220AB / D2PAK Total 1.3 °C/W
Coupling 0.3

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c).

Table 3. Static electrical characteristics (per diode)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Tj = 25° C 0.2 mA
IR(1) Reverse leakage current VR = VRRM
Tj = 125° C 65 130 mA
Tj = 25° C IF = 10 A 0.55
Tj = 125° C IF = 10 A 0.44 0.5
VF(1) Forward voltage drop V
Tj = 25° C IF = 20 A 0.73
Tj = 125° C IF = 20 A 0.62 0.72
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.28 x IF(AV) + 0.022 IF2(RMS)

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STPS20L45C Characteristics

Figure 1. Average forward power Figure 2. Average forward current versus

dissipation versus average forward ambient temperature
current (per diode) (δ = 0.5, per diode)
PF(AV)(W) IF(AV)(A)
8 12
δ = 0.1 δ = 0.2 11
7 δ = 0.5 Rth(j-a)=Rth(j-c) TO-220AB / TO-247
10
δ = 0.05
6 9 TO-220FPAB
8 Rth(j-a)=15°C/W
5
7
δ=1
4 6
5
3
4
T 3 T
2
2
1
1
IF(AV)(A) δ=tp/T tp δ=tp/T tp Tamb(°C)
0 0
0 2 4 6 8 10 12 14 0 25 50 75 100 125 150

Figure 3. Normalized avalanche power Figure 4. Normalized avalanche power

derating versus pulse duration derating versus junction
temperature
PARM(tp) PARM(tp)
PARM(1µs) PARM(25°C)
1 1.2

0.1 0.8

0.6

0.01 0.4

0.2
Tj(°C)
tp(µs) 0
0.001
25 50 75 100 125 150
0.01 0.1 1 10 100 1000

Figure 5. Non repetitive surge peak forward Figure 6. Non repetitive surge peak forward
current versus overload duration current versus overload duration
(maximum values, per diode, (maximum values, per diode,
TO-220AB, D2PAK) TO-220FPAB)
IM(A) IM(A)
140 100
90
120
80
100 70

80 60
Tj=25°C
TC=25°C
50
60
TC=75°C 40 TC=50°C

40 30
TC=125°C TC=100°C
IM 20 IM
20
t t
t(s) 10 t(s)
δ=0.5 δ=0.5
0 0
1E-3 1E-2 1E-1 1E+0 1E-3 1E-2 1E-1 1E+0

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Characteristics STPS20L45C

Figure 7. Relative variation of thermal Figure 8. Relative variation of thermal

impedance junction to case versus impedance junction to case versus
pulse duration (TO-220AB, D2PAK) pulse duration ( TO-220FPAB)
Zth(j-c)/Rth(j-c) Zth(j-c)/Rth(j-c)
1.0 1.0

0.8 0.8

δ = 0.5
0.6 0.6 δ = 0.5

0.4 δ = 0.2 0.4

δ = 0.2
δ = 0.1
T T
δ = 0.1
0.2 0.2
Single pulse
tp(s) tp(s)
δ=tp/T tp Single pulse δ=tp/T tp
0.0 0.0
1E-3 1E-2 1E-1 1E+0 1E-3 1E-2 1E-1 1E+ 0 1E+ 1

Figure 9. Reverse leakage current versus Figure 10. Junction capacitance versus
reverse voltage applied (typical reverse voltage applied (typical
values, per diode) values, per diode)
IR(mA) C(pF)
2E+2 2000
1E+2 Tj=150°C F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=125°C 1000
1E+1

Tj=75°C
1E+0

1E-1
Tj=25°C

1E-2

VR(V) VR(V)
1E-3 100
0 5 10 15 20 25 30 35 40 45 1 2 5 10 20 50

Figure 11. Forward voltage drop versus Figure 12. Thermal resistance junction to
forward current (maximum values, ambient versus copper surface
per diode) under tab (Epoxy printed circuit
board FR4, copper thickness:
35µm)( D2PAK)
IFM(A) Rth(j-a)(°C/W)
100.0 80
Tj=150°C
(typical values)
70

60
10.0 Tj=125°C
50
Tj=25°C
40

30
1.0
Tj=75°C 20

10
VFM(V) S(Cu)(cm²)
0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25 30 35 40

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STPS20L45C Package information

2 Package information

● Epoxy meets UL94, V0

● Cooling method: by conduction (C)
● Recommended torque value: 0.55 Nm
● Maximum torque value: 0.70 Nm

Table 4. TO-220FPAB dimensions

Dimensions

Ref Millimeters Inches

Min. Max. Min. Max.

A 4.4 4.6 0.173 0.181

A B 2.5 2.7 0.098 0.106

H B
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
Dia
F 0.75 1 0.030 0.039
L6 F1 1.15 1.70 0.045 0.067
L2 L7 F2 1.15 1.70 0.045 0.067
L3
G 4.95 5.20 0.195 0.205
L5

D
G1 2.4 2.7 0.094 0.106
F1
L4
H 10 10.4 0.393 0.409
F2
L2 16 Typ. 0.63 Typ.
F E L3 28.6 30.6 1.126 1.205
G1
L4 9.8 10.6 0.386 0.417
G
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126

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Package information STPS20L45C

Table 5. TO-220AB dimensions

Dimensions

Ref Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

C 1.23 1.32 0.048 0.051
H2 A
D 2.40 2.72 0.094 0.107
Dia C
E 0.49 0.70 0.019 0.027
L5
L7 F 0.61 0.88 0.024 0.034

L6 F1 1.14 1.70 0.044 0.066

L2 F2 1.14 1.70 0.044 0.066

F2 G 4.95 5.15 0.194 0.202
F1 L9 D
G1 2.40 2.70 0.094 0.106

L4 H2 10 10.40 0.393 0.409

F L2 16.4 typ. 0.645 typ.
M L4 13 14 0.511 0.551
G1 E
L5 2.65 2.95 0.104 0.116
G
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151

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STPS20L45C Package information

Table 6. D2PAK dimensions

Dimensions

Ref Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

A

E
A1 2.49 2.69 0.098 0.106
C2
L2
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
D
L B2 1.14 1.70 0.045 0.067
L3 C 0.45 0.60 0.017 0.024
A1

B2
C2 1.23 1.36 0.048 0.054
C R
B
D 8.95 9.35 0.352 0.368
G
E 10.00 10.40 0.393 0.409
A2 G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
M
* V2 L2 1.27 1.40 0.050 0.055
* FLAT ZONE NO LESS THAN 2mm L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2 0° 8° 0° 8°

Figure 13. Footprint (dimensions in millimeters)

16.90

10.30 5.08

1.30

3.70
8.90

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.

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Ordering Information STPS20L45C

3 Ordering Information

Delivery
Ordering type Marking Package Weight Base qty
mode

STPS20L45CFP STPS20L45CFP TO-220FPAB 2g 50 Tube

STPS20L45CT STPS20L45CT TO-220AB 2g 50 Tube
2
STPS20L45CG STPS20L45CG D PAK 1.48 g 50 Tube
STPS20L45CG-TR STPS20L45CG D2PAK 1.48 g 1000 Tape & Reel

4 Revision history

Date Revision Description of Changes

Jul_2003 3C Last release.

22-Mar-2007 4 Removed ISOWATT and TO-247 packages.

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STPS20L45C

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