Emergence of Scaling in Random Networks
Emergence of Scaling in Random Networks
that proposed to explain, in terms of sp-d bond- down to about 5% at 300 K in Co/STO/
ing, the positive polarization at the Co-ALO LSMO (4). However, other types of oxides of
interface (8). However, there is no general the- the double-perovskite family (for example,
ory predicting the trend of the experimental Sr2FeMoO6) combine electronic properties
results for Co—that is, a negative polarization similar to those of manganites with a defi-
with oxides of d elements (STO, CLO, Ta2O5) nitely higher Curie temperature (15). Their
and a positive one when there are only s and p use in magnetic tunnel junctions is promising
states (ALO). It is likely that the spin polariza- for a new generation of tunnel junctions with
tion should also depend on the position of the very high magnetoresistance for room-tem-
Fermi level with respect to the electronic levels perature applications.
of each character above and below the gap of
the insulator. In addition, as an evanescent References and Notes
1. J. S. Moodera, L. R. Kinder, T. M. Wong, R. Meservey,
wave in an insulator is a Bloch wave with an Phys. Rev. Lett. 74, 3273 (1995).
imaginary wave vector, one can expect differ- 2. J. De Boeck, Science 281, 357 (1998).
ent decay lengths for Bloch waves of different 3. M. Sharma, S. X. Wang, J. H. Nickel, Phys. Rev. Lett.
82, 616 (1999).
character. This means that the final polarization 4. J. M. De Teresa et al., ibid., p. 4288.
could also depend on the thickness of the bar- 5. P. M. Tedrow and R. Meservey, Phys. Rev. B 7, 318
rier, as illustrated by the calculations of Mac- (1973); R. Meservey and P. M. Tedrow, Phys. Rep.
Laren et al. for Fe/ZnSe/Fe junctions (14). 238, 173 (1994).
6. M. B. Stearns, J. Magn. Magn. Mater. 5, 187 (1997).
冉 冊
ogy have been described with the random k, following P(k) ⬃ k ⫺␥ actor, where ␥actor ⫽
N⫺1
2.3 ⫾ 0.1 (Fig. 1A). A more complex net-
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