Gate Solved Paper Ec Analog Electronics
Gate Solved Paper Ec Analog Electronics
ANALOG ELECTRONICS
Q. 1 In the circuit shown below what is the output voltage ^Vouth if a silicon transistor
Q and an ideal op-amp are used?
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(A) 8 (B) 32
(C) 50 (D) 200
Q. 4 In the circuit shown below, the knee current of the ideal Zener dioide is 10 mA
. To maintain 5 V across RL , the minimum value of RL in W and the minimum
power rating of the Zener diode in mW, respectively, are
Q. 5 In the circuit shown below the op-amps are ideal. Then, Vout in Volts is
(A) 4 (B) 6
(C) 8 (D) 10
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(A) XY (B) XY
(C) XY (D) XY
Q. 7 A voltage 1000 sin wt Volts is applied across YZ . Assuming ideal diodes, the
voltage measured across WX in Volts, is
Q. 8 In the circuit shown below, the silicon npn transistor Q has a very high value of
b . The required value of R2 in kW to produce IC = 1 mA is
(A) 20 (B) 30
(C) 40 (D) 50
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Q. 10 The current ib through the base of a silicon npn transistor is 1 + 0.1 cos (10000pt) mA
At 300 K, the rp in the small signal model of the transistor is
Q. 11 The diodes and capacitors in the circuit shown are ideal. The voltage v (t) across
the diode D1 is
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Q. 15 In the circuit shown below, capacitors C1 and C2 are very large and are shorts at
the input frequency. vi is a small signal input. The gain magnitude vo at 10 M
vi
rad/s is
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Q. 16 The circuit below implements a filter between the input current ii and the output
voltage vo . Assume that the op-amp is ideal. The filter implemented is a
Q. 17 In the circuit shown below, for the MOS transistors, mn Cox = 100 mA/V 2 and the
threshold voltage VT = 1 V . The voltage Vx at the source of the upper transistor is
(A) 1 V (B) 2 V
(C) 3 V (D) 3.67 V
Q. 18 For a BJT, the common base current gain a = 0.98 and the collector base
junction reverse bias saturation current ICO = 0.6 mA . This BJT is connected in
the common emitter mode and operated in the active region with a base drive
current IB = 20 mA . The collector current IC for this mode of operation is
(A) 0.98 mA (B) 0.99 mA
(C) 1.0 mA (D) 1.01 mA
Q. 19 For the BJT, Q1 in the circuit shown below, b = 3, VBEon = 0.7 V, VCEsat = 0.7 V
. The switch is initially closed. At time t = 0 , the switch is opened. The time t at
which Q1 leaves the active region is
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(A) 10 ms (B) 25 ms
(C) 50 ms (D) 100 ms
Q. 22 The amplifier circuit shown below uses a silicon transistor. The capacitors CC
and CE can be assumed to be short at signal frequency and effect of output
resistance r0 can be ignored. If CE is disconnected from the circuit, which one of
the following statements is true
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(D) Both input resistance Ri and the magnitude of voltage gain AV increases
Q. 23 In the silicon BJT circuit shown below, assume that the emitter area of transistor
Q1 is half that of transistor Q2
Q. 24 Assuming the OP-AMP to be ideal, the voltage gain of the amplifier shown below
is
(A) - R2 (B) - R 3
R1 R1
R || R 3
(C) - 2 (D) -b R2 + R 3 l
R1 R1
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Q. 27 The transfer characteristic for the precision rectifier circuit shown below is
(assume ideal OP-AMP and practical diodes)
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Q. 30 For small increase in VG beyond 1V, which of the following gives the correct
description of the region of operation of each MOSFET
(A) Both the MOSFETs are in saturation region
(B) Both the MOSFETs are in triode region
(C) n-MOSFETs is in triode and p -MOSFET is in saturation region
(D) n- MOSFET is in saturation and p -MOSFET is in triode region
Q. 31 Estimate the output voltage V0 for VG = 1.5 V. [Hints : Use the appropriate
current-voltage equation for each MOSFET, based on the answer to Q.4.16]
(A) 4 - 1 (B) 4 + 1
2 2
(C) 4 - 3 (D) 4 + 3
2 2
Q. 32 In the circuit shown below, the op-amp is ideal, the transistor has VBE = 0.6 V
and b = 150 . Decide whether the feedback in the circuit is positive or negative
and determine the voltage V at the output of the op-amp.
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Q. 35 For the circuit shown in the following figure, transistor M1 and M2 are identical
NMOS transistors. Assume the M2 is in saturation and the output is unloaded.
and V is the voltage across the diode (taken as positive for forward bias). For an
input voltage Vi =- 1 V , the output voltage V0 is
Q. 38 Two identical NMOS transistors M1 and M2 are connected as shown below. Vbias
is chosen so that both transistors are in saturation. The equivalent gm of the pair
is defied to be 2Iout at constant Vout
2Vi
The equivalent gm of the pair is
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(A) -2 V (B) -1 V
(C) -0.5 V (D) 0.5 V
Q. 45 For the BJT circuit shown, assume that the b of the transistor is very large and
VBE = 0.7 V. The mode of operation of the BJT is
Q. 46 In the Op-Amp circuit shown, assume that the diode current follows the equation
I = Is exp (V/VT ). For Vi = 2V, V0 = V01, and for Vi = 4V, V0 = V02 .
The relationship between V01 and V02 is
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Q. 47 In the CMOS inverter circuit shown, if the trans conductance parameters of the
NMOS and PMOS transistors are
W
kn = kp = mn Cox Wn = mCox p = 40mA/V2
Ln Lp
and their threshold voltages ae VTHn = VTHp = 1 V the current I is
(A) 0 A (B) 25 mA
(C) 45 mA (D) 90 mA
Q. 48 For the Zener diode shown in the figure, the Zener voltage at knee is 7 V, the knee
current is negligible and the Zener dynamic resistance is 10 W. If the input voltage
(Vi) range is from 10 to 16 V, the output voltage (V0) ranges from
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(C) 1 (D) 1
1 - sRC 1 + sRC
Q. 50 If Vi = V1 sin (wt) and V0 = V2 sin (wt + f), then the minimum and maximum values
of f (in radians) are respectively
(A) - p and p (B) 0 and p
2 2 2
(C) - p and 0 p
(D) - and 0
2
Q. 51 The input impedance (Zi) and the output impedance (Z0) of an ideal trans-
conductance (voltage controlled current source) amplifier are
(A) Zi = 0, Z0 = 0
(B) Zi = 0, Z0 = 3
(C) Zi = 3, Z0 = 0
(D) Zi = 3, Z0 = 3
Q. 52 An n-channel depletion MOSFET has following two points on its ID - VGs curve:
(i) VGS = 0 at ID = 12 mA and
(ii) VGS =- 6 Volts at ID = 0 mA
Which of the following Q point will given the highest trans conductance gain for
small signals?
(A) VGS =- 6 Volts (B) VGS =- 3 Volts
(C) VGS = 0 Volts (D) VGS = 3 Volts
Q. 53 For the circuit shown in the following figure, the capacitor C is initially uncharged.
At t = 0 the switch S is closed. The Vc across the capacitor at t = 1 millisecond is
In the figure shown above, the OP-AMP is supplied with !15V .
Q. 54 For the circuit shown below, assume that the zener diode is ideal with a breakdown
voltage of 6 volts. The waveform observed across R is
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Q. 59 If the unregulated voltage increases by 20%, the power dissipation across the
transistor Q1
(A) increases by 20% (B) increases by 50%
(C) remains unchanged (D) decreases by 20%
(A) 30 kW (B) 10 kW
4
(C) 40 kW (D) infinite
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Q. 64 For an npn transistor connected as shown in figure VBE = 0.7 volts. Given that
reverse saturation current of the junction at room temperature 300 K is 10 - 13 A,
the emitter current is
(A) 30 mA (B) 39 mA
(C) 49 mA (D) 20 mA
Q. 65 The voltage e0 is indicated in the figure has been measured by an ideal voltmeter.
Which of the following can be calculated ?
Q. 66 The Op-amp circuit shown in the figure is filter. The type of filter and its cut. Off
frequency are respectively
(A) high pass, 1000 rad/sec. (B) Low pass, 1000 rad/sec
(C) high pass, 1000 rad/sec (D) low pass, 10000 rad/sec
Q. 67 The circuit using a BJT with b = 50 and VBE = 0.7V is shown in the figure. The
base current IB and collector voltage by VC and respectively
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Q. 68 The Zener diode in the regulator circuit shown in the figure has a Zener voltage
of 5.8 volts and a zener knee current of 0.5 mA. The maximum load current
drawn from this current ensuring proper functioning over the input voltage range
between 20 and 30 volts, is
Q. 69 Both transistors T1 and T2 show in the figure, have a b = 100 , threshold voltage of
1 Volts. The device parameters K1 and K2 of T1 and T2 are, respectively, 36 mA/V2
and 9 mA/V 2 . The output voltage Vo i s
(A) 1 V (B) 2 V
(C) 3 V (D) 4 V
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Q. 73 Given the ideal operational amplifier circuit shown in the figure indicate the
correct transfer characteristics assuming ideal diodes with zero cut-in voltage.
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(A) 1 mF (B) 2p mF
2p
(C) 1 mF (D) 2p 6 mF
2p 6
Q. 79 In the op-amp circuit given in the figure, the load current iL is
(A) - Vs (B) Vs
R2 R2
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(C) - Vs (D) Vs
RL R1
Q. 80 In the voltage regulator shown in the figure, the load current can vary from 100
mA to 500 mA. Assuming that the Zener diode is ideal (i.e., the Zener knee
current is negligibly small and Zener resistance is zero in the breakdown region),
the value of R is
(A) 7 W (B) 70 W
(C) 70 W (D) 14 W
3
Q. 81 In a full-wave rectifier using two ideal diodes, Vdc and Vm are the dc and peak
values of the voltage respectively across a resistive load. If PIV is the peak inverse
voltage of the diode, then the appropriate relationships for this rectifier are
(A) Vdc = Vm , PIV = 2Vm (B) Idc = 2 Vm , PIV = 2Vm
p p
(C) Vdc = 2 Vm , PIV = Vm (D) Vdc Vm , PIV = Vm
p p
Q. 82 Assume that the b of transistor is extremely large and VBE = 0.7V, IC and VCE in
the circuit shown in the figure
Q. 83 Choose the correct match for input resistance of various amplifier configurations
shown below :
Configuration Input resistance
CB : Common Base LO : Low
CC : Common Collector MO : Moderate
CE : Common Emitter HI : High
(A) CB - LO, CC - MO, CE - HI
(B) CB - LO, CC - HI, CE - MO
(C) CB - MO, CC - HI, CE - LO
(D) CB - HI, CC - LO, CE - MO
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Q. 85 If the input to the ideal comparators shown in the figure is a sinusoidal signal of 8
V (peak to peak) without any DC component, then the output of the comparators
has a duty cycle of
Q. 86 If the differential voltage gain and the common mode voltage gain of a differential
amplifier are 48 dB and 2 dB respectively, then common mode rejection ratio is
(A) 23 dB (B) 25 dB
(C) 46 dB (D) 50 dB
Q. 87 Generally, the gain of a transistor amplifier falls at high frequencies due to the
(A) internal capacitances of the device
(B) coupling capacitor at the input
(C) skin effect
(D) coupling capacitor at the output
Q. 89 In the amplifier circuit shown in the figure, the values of R1 and R2 are such that
the transistor is operating at VCE = 3 V and IC = 1.5 mA when its b is 150. For
a transistor with b of 200, the operating point (VCE , IC ) is
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Q. 90 The oscillator circuit shown in the figure has an ideal inverting amplifier. Its
frequency of oscillation (in Hz) is
(A) 1 (B) 1
(2p 6 RC) (2pRC)
(C) 1 (D) 6
( 6 RC) (2pRC)
Q. 91 The output voltage of the regulated power supply shown in the figure is
(A) 3 V (B) 6 V
(C) 9 V (D) 12 V
Q. 92 If the op-amp in the figure is ideal, the output voltage Vout will be equal to
(A) 1 V (B) 6 V
(C) 14 V (D) 17 V
Q. 93 Three identical amplifiers with each one having a voltage gain of 50, input
resistance of 1 kW and output resistance of 250 W are cascaded. The opened
circuit voltages gain of the combined amplifier is
(A) 49 dB (B) 51 dB
(C) 98 dB (D) 102 dB
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Q. 98 The circuit in the figure employs positive feedback and is intended to generate
V (f) 1
sinusoidal oscillation. If at a frequency f0, B (f) = 3 f = +0c, then to sustain
V0 (f) 6
oscillation at this frequency
Q. 100 A zener diode regulator in the figure is to be designed to meet the specifications:
IL = 10 mA V0 = 10 V and Vin varies from 30 V to 50 V. The zener diode has
Vz = 10 V and Izk (knee current) =1 mA. For satisfactory operation
Q. 101 The voltage gain Av = v0 of the JFET amplifier shown in the figure is IDSS = 10
vt
mA Vp =- 5 V(Assume C1, C2 and Cs to be very large
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Q. 106 The transistor shunt regulator shown in the figure has a regulated output voltage
of 10 V, when the input varies from 20 V to 30 V. The relevant parameters for
the zener diode and the transistor are : Vz = 9.5 , VBE = 0.3 V, b = 99 , Neglect the
current through RB . Then the maximum power dissipated in the zener diode (Pz )
and the transistor (PT ) are
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4
(A) Hartely oscillator with foscillation = 79.6 MHz
(B) Colpitts oscillator with foscillation = 50.3 MHz
(C) Hartley oscillator with foscillation = 159.2 MHz
(D) Colpitts oscillator with foscillation = 159.3 MHz
Q. 108 The inverting OP-AMP shown in the figure has an open-loop gain of 100.
Q. 109 In the figure assume the OP-AMPs to be ideal. The output v0 of the circuit is
t
(A) 10 cos (100t) (B) 10 #0 cos (100t) dt
t
(C) 10 - 4 #0 cos (100t) dt (D) 10 - 4 d cos (100t)
dt
Q. 111 In the differential amplifier of the figure, if the source resistance of the current
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(A) -1 V (B) 2 V
(C) +1 V (D) +15 V
Q. 113 The current gain of a bipolar transistor drops at high frequencies because of
(A) transistor capacitances (B) high current effects in the base
(C) parasitic inductive elements (D) the Early effect
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Q. 116 Assume that the op-amp of the figure is ideal. If vi is a triangular wave, then v0
will be
Q. 117 The most commonly used amplifier is sample and hold circuits is
(A) a unity gain inverting amplifier
(B) a unity gain non-inverting amplifier
(C) an inverting amplifier with a gain of 10
(D) an inverting amplifier with a gain of 100
Q. 118 In the circuit of figure, assume that the transistor is in the active region. It has a
large b and its base-emitter voltage is 0.7 V. The value of Ic is
Q. 119 If the op-amp in the figure has an input offset voltage of 5 mV and an open-loop
voltage gain of 10000, then v0 will be
(A) 0 V (B) 5 mV
(C) + 15 V or -15 V (D) +50 V or -50 V
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Q. 120 The first dominant pole encountered in the frequency response of a compensated
op-amp is approximately at
(A) 5 Hz (B) 10 kHz
(C) 1 MHz (D) 100 MHz
Q. 122 In the cascade amplifier shown in the given figure, if the common-emitter
stage (Q1) has a transconductance gm1 , and the common base stage (Q2) has
a transconductance gm2 , then the overall transconductance g (= i 0 /vi) of the
cascade amplifier is
Q. 126 The circuit of the figure is an example of feedback of the following type
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Q. 128 From a measurement of the rise time of the output pulse of an amplifier whose is
a small amplitude square wave, one can estimate the following parameter of the
amplifier
(A) gain-bandwidth product (B) slow rate
(C) upper 3–dB frequency (D) lower 3–dB frequency
Q. 129 The emitter coupled pair of BJT’s given a linear transfer relation between the
differential output voltage and the differential output voltage and the differential
input voltage Vid is less a times the thermal voltage, where a is
(A) 4 (B) 3
(C) 2 (D) 1
Q. 131 A multistage amplifier has a low-pass response with three real poles at
s =- w1 - w2 and w3 . The approximate overall bandwidth B of the amplifier will
be given by
(A) B = w1 + w2 + w3 (B) 1 = 1 + 1 + 1
B w1 w2 w3
(C) B = (w1 + w2 + w3) 1/3 (D) B = w12 + w22 + w23
Q. 132 One input terminal of high gain comparator circuit is connected to ground and a
sinusoidal voltage is applied to the other input. The output of comparator will be
(A) a sinusoid (B) a full rectified sinusoid
(C) a half rectified sinusoid (D) a square wave
Q. 133 In a series regulated power supply circuit, the voltage gain Av of the ‘pass’
transistor satisfies the condition
(A) Av " 3 (B) 1 << Av < 3
(C) Av . 1 (D) Av << 1
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Q. 134 For full wave rectification, a four diode bridge rectifier is claimed to have the
following advantages over a two diode circuit :
(A) less expensive transformer,
(B) smaller size transformer, and
(C) suitability for higher voltage application.
Of these,
(A) only (1) and (2) are true (B) only (1) and (3) are true
(C) only (2) and (3) are true (D) (1), (2) as well as (3) are true
Q. 135 In the MOSFET amplifier of the figure is the signal output V1 and V2 obey the
relationship
Q. 136 For small signal ac operation, a practical forward biased diode can be modelled as
(A) a resistance and a capacitance in series
(B) an ideal diode and resistance in parallel
(C) a resistance and an ideal diode in series
(D) a resistance
Q. 137 In the BJT amplifier shown in the figure is the transistor is based in the forward
active region. Putting a capacitor across RE will
(A) decrease the voltage gain and decrease the input impedance
(B) increase the voltage gain and decrease the input impedance
(C) decrease the voltage gain and increase the input impedance
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(D) increase the voltage gain and increase the input impedance
Q. 139 In a common emitter BJT amplifier, the maximum usable supply voltage is
limited by
(A) Avalanche breakdown of Base-Emitter junction
(B) Collector-Base breakdown voltage with emitter open (BVCBO)
(C) Collector-Emitter breakdown voltage with base open (BVCBO)
(D) Zener breakdown voltage of the Emitter-Base junction
Q. 140 In the circuit of in the figure is the current iD through the ideal diode (zero cut
in voltage and forward resistance) equals
(A) 0 A (B) 4 A
(C) 1 A (D) None of the above
(A) - 4 V (B) 6 V
(C) 5 V (D) - 5.5 V
Q. 142 A half wave rectifier uses a diode with a forward resistance Rf . The voltage is
Vm sin wt and the load resistance is RL . The DC current is given by
(A) Vm (B) Vm
2 RL p (R f + RL)
(C) 2Vm (D) Vm
p RL
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Q. 143 In the circuit of the given figure, assume that the diodes are ideal and the meter
is an average indicating ammeter. The ammeter will read
Q. 145 In the circuit shown in the given figure N is a finite gain amplifier with a gain
of k , a very large input impedance, and a very low output impedance. The input
impedance of the feedback amplifier with the feedback impedance Z connected
as shown will be
(A) Z b1 - 1 l (B) Z (1 - k)
k
(C) Z (D) Z
(k - 1) (1 - k)
Q. 146 A Darlington stage is shown in the figure. If the transconductance of Q1 is gm1 and
c
Q2 is gm2 , then the overall transconductance gmc ;T i cc E is given by
vbe
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Q. 147 Value of R in the oscillator circuit shown in the given figure, so chosen that it just
oscillates at an angular frequency of w. The value of w and the required value of
R will respectively be
Q. 148 A zener diode in the circuit shown in the figure is has a knee current of 5 mA,
and a maximum allowed power dissipation of 300 mW. What are the minimum
and maximum load currents that can be drawn safely from the circuit, keeping
the output voltage V0 constant at 6 V?
***********
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SOLUTIONS
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40 mA $ 5
RL
40 # 10 $ 5
-3
RL
1 # RL
40 # 10-3 5
5 # RL
40 # 10-3
or, 125 W # RL
Therefore, minimum value of RL = 125 W
Now, we know that power rating of Zener diode is given by
PR = VZ IZ^maxh
IZ^maxh is maximum current through zener diode in reverse bias. Maximum
currrent through zener diode flows when load current is zero. i.e.,
IZ^maxh = Is = 10 - 5 = 0.05
100
Therefore, PR = 5 # 0.05 W = 250 mW
Sol. 5 Option (C) is correct.
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X Y Z
0 0 0
0 1 1
1 0 0
1 1 0
Logic 0 means voltage is v = 0 volt and logic 1 means voltage is 5 volt
For x = 0 , y = 0 , Transistor is at cut off mode and diode is forward biased. Since,
there is no drop across forward biased diode.
So, Z =Y=0
For x = 0 , y = 1, Again Transistor is in cutoff mode, and diode is forward biased.
with no current flowing through resistor.
So, Z =Y=1
For x = 1, y = 0 , Transistor is in saturation mode and so, z directly connected to
ground irrespective of any value of Y .
i.e., Z = 0 (ground)
Similarly for X = Y = 1
Z = 0 (ground)
Hence, from the obtained truth table, we get
Z =XY
Sol. 7 Option (D) is correct.
Given, the input voltage
VYZ = 100 sin wt
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VTh = VCC R2 = 3R 2
R1 + R 2 R1 + R 2
and RTh = R 2 R1
R 2 + R1
Since, IC = bIB has b . 3 (very high) so, IB is negative in comparison to IC .
Therefore, we can write the base voltage
VB = VTh
So, VTh - 0.7 - IC RE = 0
or, ^ h^ h
3R2 - 0.7 - 10-3 500 = 0
R1 + R 2
or, 3R 2 = 0.7 + 0.5
60 kW + R2
or, 3R2 = ^60 kWh^1.2h + 1.2R2
Hence, R2 = 60 # 1.2 = 40 kW
1.8
Sol. 9 Option (D) is correct.
Let v > 0.7 V and diode is forward biased. By applying Kirchoff’s voltage law
10 - i # 1k - v = 0
10 - :v - 0.7 D (1000) - v = 0
500
10 - (v - 0.7) # 2 - v = 0
10 - 3v + 1.4 = 0
v = 11.4 = 3.8 V > 0.7 (Assumption is true)
3
So, i = v - 0.7 = 3.8 - 0.7 = 6.2 mA
500 500
Sol. 10 Option (C) is correct.
Given ib = 1 + 0.1 cos (1000pt) mA
So, IB = DC component of ib
= 1 mA
In small signal model of the transistor
bVT
rp = VT " Thermal voltage
IC
= VT = VT = VT IC = I
B
IC /b IB IB b
So, rp = 25 mV = 25 W VT = 25 mV, IB = 1 mA
1 mA
Sol. 11 Option (A) is correct.
The circuit composed of a clamper and a peak rectifier as shown.
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The peak rectifier adds + 1 V to peak voltage, so overall peak voltage lowers down
by - 1 volt.
So, vo = cos wt - 1
ZTh = Vtest
Itest
Applying KCL at top right node
Vtest + Vtest - 99I = I
b test
9 k + 1k 100
Vtest + Vtest - 99I = I ...(i)
b test
10 k 100
But Ib =- Vtest =-Vtest
9k + 1k 10k
Substituting Ib into equation (i), we have
Vtest + Vtest + 99Vtest = I
test
10 k 100 10 k
100Vtest + Vtest = I
test
10 # 103 100
2Vtest = I
test
100
ZTh = Vtest = 50 W
Itest
Sol. 13 Option (B) is correct.
First we obtain the transfer function.
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0 - Vi (jw) 0 - Vo (jw)
+ =0
1 +R R2
1
jw C
Vo (jw) - Vi (jw)
=
R2 1 +R
1
j wC
Vi (jw) R2
Vo (jw) =-
R1 - j 1
wC
At w " 0 (Low frequencies), 1 " 3, so V = 0
o
wC
At w " 3 (higher frequencies)
1 " 0, so V (jw) =- R2 V (jw)
o
wC R1 i
The filter passes high frequencies so it is a high pass filter.
H (jw) = Vo = - R2
Vi R1 - j 1
wC
H (3) = - R 2
= R 2
R1 R1
At 3 dB frequency, gain will be 2 times of maximum gain 6H (3)@
H ^ jw0h = 1 H (3)
2
R2 1 R2
So,
1
= b R1 l
2
R1 + 2 2 2
w0 C
2R 12 = R 12 + 1
w02 C 2
R 12 =1
w 2C 2
w0 = 1
R1 C
Sol. 14 Option (D) is correct.
DC Analysis :
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VC - 100IB - 0.7 = 0
VC = 100IB + 0.7 ...(i)
IC - IE = 13.7 - VC = (b + 1) IB
12k
13.7 - VC = 100I ...(ii)
B
12 # 103
Solving equation (i) and (ii),
IB = 0.01 mA
Small Signal Analysis :
Transforming given input voltage source into equivalent current source.
vi = - 5.1 # 10-4 v - v 0
0
Rs 428.72 RF
vi =- 1.16 # 10-6 v 0 - 1 # 10-5 v 0 Rs = 10 kW (source resistance)
10 # 103
vi =- 1.116 # 10-5
10 # 103
Av = v 0 = 1 - 8.96
vi 10 # 103 # 1.116 # 10-5
Sol. 15 Option (A) is correct.
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For transistor M2 ,
VGS = VG - VS = Vx - 0 = Vx
VDS = VD - VS = Vx - 0 = Vx
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mn C 0x m C
(4)(5 - Vx - 1) 2 = n 0x 1 (Vx - 1) 2
2 2
4 (4 - Vx ) 2 = (Vx - 1) 2
or 2 (4 - Vx ) = ! (Vx - 1)
Taking positive root, 8 - 2Vx = Vx - 1
Vx = 3 V
At Vx = 3 V for M1,VGS = 5 - 3 = 2 V < VDS . Thus our assumption is true and
Vx = 3 V .
Sol. 18 Option (D) is correct.
We have a = 0.98
Now b = a = 4.9
1-a
In active region, for common emitter amplifier,
IC = bIB + (1 + b) ICO ...(1)
Substituting ICO = 0.6 mA and IB = 20 mA in above eq we have,
IC = 1.01 mA
Sol. 19 Option (C) is correct.
In active region VBEon = 0.7 V
Emitter voltage VE = VB - VBEon =- 5.7 V
V - (- 10) - 5.7 - (- 10)
Emitter Current IE = E = = 1 mA
4.3k 4.3k
Now IC . IE = 1 mA
Applying KCL at collector
i1 = 0.5 mA
Since i1 = C dVC
dt
or VC = 1 # i1 dt = i1 t ...(1)
C C
with time, the capacitor charges and voltage across collector changes from 0
towards negative.
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Input impedance Ri = RB || r p
Voltage gain AV = gm RC
Now, if CE is disconnected, resistance RE appears in the circuit
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VB =- 10 - (- 0.7) =- 9.3 V
0 - (- 9.3)
Collector current I1 = = 1 mA
(9.3 kW)
b 1 = 700 (high), So IC . IE 1
1 - (b 1 + 1) IB = IB + IB
1 1 2
IB
1 = (700 + 1 + 1) 2
+ IB
2 2
IB . 2
2
702
I 0 = IC = b 2 : IB = 715 # 2 . 2 mA
2 2
702
Sol. 24 Option (A) is correct.
The circuit is as shown below :
So, 0 - Vi + 0 - Vo = 0
R1 R2
or Vo =- R2
Vi R1
Sol. 25 Option (B) is correct.
By small signal equivalent circuit analysis
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Current I = 20 - 0 + Vi - 0 = 5 + Vi
4R R R
If I > 0, diode D2 conducts
So, for 5 + VI > 0 & VI > - 5, D2 conducts
2
Equivalent circuit is shown below
0 - Vi + 0 - 20 + 0 - Vo = 0
R 4R R
or Vo =- Vi - 5
At Vi =- 5 V, Vo = 0
At Vi =- 10 V, Vo = 5 V
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Hence Ix = Ibias
Sol. 36 Option (B) is correct.
The circuit is using ideal OPAMP. The non inverting terminal of OPAMP is at
ground, thus inverting terminal is also at virtual ground.
Thus current will flow from -ive terminal (0 Volt) to -1 Volt source. Thus the
current I is
0 - (- 1)
I = = 1
100k 100k
The current through diode is
I = I 0 _eV - 1i
V
t
Now VT = 25 mV and I0 = 1 mA
I = 10-6 8e 25 # 10 - 1B = 1 5
V
Thus -3
10
or V = 0.06 V
Now V0 = I # 4k + V = 1 # 4k + 0.06 = 0.1 V
100k
Sol. 37 Option (B) is correct.
The circuit is using ideal OPAMP. The non inverting terminal of OPAMP is at
ground, thus inverting terminal is also at virtual ground.
Thus we can write
vi = -Rv
R1 + sL sR C + 1
2
2 2
or v0 =- R2
vi (R1 + sL)( sR2 C2 + 1)
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and from this equation it may be easily seen that this is the standard form of
T.F. of low pass filter
H (s) = K
(R1 + sL)( sR2 C2 + 1)
and form this equation it may be easily seen that this is the standard form of
T.F. of low pass filter
H (s) = K
as2 + bs + b
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IC
gm = = 1m = 1 A/V IC . IE
VT 25m 25
Vo =- gm Vp # (3k 3k )
=- 1 Vin (1.5k) Vp = Vin
25
=- 60Vin
or Am = Vo =- 60
Vin
Sol. 42 Option (C) is correct.
The circuit shown in (C) is correct full wave rectifier circuit.
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Rf
Vo = Vin c1 +
R1 m
We know that
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ADM =- gm RC
Thus only common mode gain depends on RE and for large value of RE it
decreases.
Sol. 64 Option (C) is correct.
IE = Is `e nV - 1j = 10 - 13 c
VBE
T
0. 7 - 1m = 49 mA
1 # 26 # 10 3
e
Sol. 65 Option (C) is correct.
The circuit is as shown below
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Since the FET has high input resistance, gate current can be neglect and we get
VGS =- 2 V
Since VP < VGS < 0 , FET is operating in active region
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(- 2) 2
ID = IDSS c1 - VGS m = 10 c1 -
2
(- 8) m
Now = 5.625 mA
VP
Now VDS = VDD - ID RD = 20 - 5.625 m # 2 k = 8.75 V
Sol. 72 Option (B) is correct.
The transconductance is
gm = 2
VP ID IDSS
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VT = R1 V = 1
#5 = 1 V
R1 + R2 C 4+1
Since b is large is large, IC . IE , IB . 0 and
IE = VT - VBE = 1 - 0.7 = 3 mA
RE 300
Now VCE = 5 - 2.2kIC - 300IE
= 5 - 2.2k # 1m - 300 # 1m = 2.5 V
Sol. 83 Option (B) is correct.
For the different combinations the table is as follows
CE CE CC CB
Ai High High Unity
Av High Unity High
Ri Medium High Low
Ro Medium Low High
From fig, first crossover is at wt1 and second crossover is at wt2 where
4 sin wt1 = 2V
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V+ = 8 (3) = 8 kW
1+8 3
8
V+ = V- = V
3
Now applying KCL at inverting terminal we get
V- - 2 + V- - Vo = 0
1 5
or Vo = 6V- - 10
= 6 # 8 - 10 = 6 V
3
Sol. 93 Option (C) is correct.
The equivalent circuit of 3 cascade stage is as shown in fig.
V2 = 1k 50V1 = 40V1
1k + 0.25k
Similarly V3 = 1k 50V2 = 40V2
1k + 0.25k
or V3 = 40 # 40V1
Vo = 50V3 = 50 # 40 # 40V1
or AV = Vo = 50 # 40 # 40 = 8000
V1
or 20 log AV = 20 log 8000 = 98 dB
Sol. 94 Option (D) is correct.
If a constant current is made to flow in a capacitor, the output voltage is integration
of input current and that is sawtooth waveform as below :
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t
VC = 1 # idt
C 0
The time period of wave form is
T = 1 = 1 = 2 m sec
f 500
20 # 10
3
1
6 #
Thus 3= idt
2 # 10 0
or i (2 # 10 - 3 - 0) = 6 # 10 - 6
or i = 3 mA
Thus the charging require 3 mA current source for 2 msec.
Sol. 95 Option (C) is correct.
In voltage-amplifier or voltage-series amplifier, the Ri increase and Ro decrease
because
Rif = Ri (1 + Ab)
Rof = Ro
(1 + Ab)
Sol. 96 Option (B) is correct.
Let x be the gain and it is 20 db, therefore
20 log x = 20
or x = 10
Since Gain band width product is 106 Hz, thus
So, bandwidth is
6 6
BW = 10 = 10 = 105 Hz = 100 kHz
Gain 10
Sol. 97 Option (A) is correct.
In multistage amplifier bandwidth decrease and overall gain increase. From
bandwidth point of view only options (A) may be correct because lower cutoff
frequency must be increases and higher must be decreases. From following
calculation we have
We have fL = 20 Hz and fH = 1 kHz
For n stage amplifier the lower cutoff frequency is
fL 20
f =
Ln 1
= = 39.2 . 40 Hz
1
2n - 1 23 - 1
The higher cutoff frequency is
1
fHn = fH 2 2 - 1 = 0.5 kHz
Sol. 98 Option (A) is correct.
As per Barkhousen criterion for sustained oscillations Ab $ 1 and phase shift
must be or 2pn .
V (f)
Now from circuit A= O = 1 + R2
Vf (f) R1
V (f )
b (f) = 1 +0 = f
6 VO (f)
Thus from above equation for sustained oscillation
6 = 1 + R2
R1
or R2 = 5R1
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or Vm = SR = -6 1
AV V2pf 10 # 100 # 2p # 20 # 103
or VM = 79.5 mV
Sol. 100 Option (A) is correct.
The circuit is shown as below
I = IZ + IL
For satisfactory operations
Vin - V0 > IZ + IL [IZ + IL = I]
R
When Vin = 30 V,
30 - 10 $ (10 + 1) mA
R
or 20 $ 11 mA
R
or R # 1818 W
when Vin = 50 V 50 - 10 $ (10 + 1) mA
R
40 $ 11 # 10 - 3
R
or R # 3636W Thus R # 1818W
Sol. 101 Option (D) is correct.
We have
IDSS = 10 mA and VP =- 5 V
Now VG =0
and VS = ID RS = 1 # 2.5W = 2.5 V
Thus VGS = VG - VS = 0 - 2.5 =- 2.5 V
Now gm = 2IDSS 81 - ` - 2.5 jB = 2 mS
VP -5
AV = V0 =- gm RD
Vi
So, =- 2ms # 3k =- 6
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Maximum power will dissipate in Zener diode when current through it is maximum
and it will occur at Vin = 30 V
I = Vin - Vo = 30 - 10 = 1 A
20 20
I IC + IZ = bIB + IZ Since IC = bIB
= bIZ + IZ = (b + 1) IZ since IB = IZ
or IZ = I = 1 = 0.01 A
b+1 99 + 1
Power dissipated in zener diode is
PZ = VZ IZ = 9.5 # 0.01 = 95 mW
IC = bIZ = 99 # 0.1 = 0.99 A
VCE = Vo = 10 V
Power dissipated in transistor is
PT = VC IC = 10 # 0.99 = 9.9 W
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VT = R1 V = 5
# 15 = 5 V
R1 + R2 C 10 + 5
Since b is large is large, IC . IE , IB . 0 and
IE = VT - VBE
RE
= 5 - 0 .7 = 4. 3 = 10 mA
0.430kW 0.430KW
Sol. 119 Option (C) is correct.
The output voltage will be input offset voltage multiplied by open by open loop
gain. Thus
So V0 = 5mV # 10, 000 = 50 V
But V0 = ! 15 V in saturation condition
So, it can never be exceeds !15 V
So, V0 = ! Vset = ! 15V
Sol. 120 Option (A) is correct.
Sol. 121 Option (A) is correct.
Negative feedback in amplifier reduces the gain of the system.
Sol. 122 Option (A) is correct.
By drawing small signal equivalent circuit
by applying KCL at E2
Vp
gm1 Vp - 2
= gm2 Vp
1
rp2
2
at C2 i 0 =- gm2 Vp 2
gm1 Vp =- i 0 :1 + 1 D
1
gm2 rp 2
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gm2 rp = b >> 1
2
so gm1 Vp =- i 0
1
i 0 =- g
m1
Vp 1
i0 = g a Vp = Vi
m1
Vi 1
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Input impedance Ri = RB || r p
Voltage gain AV = gm RC
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If we assume consider the diode in reverse bias then Vn should be greater than VP .
VP < Vn
by calculating
VP = 10 # 4 = 5 Volt
4+4
Vn = 2 # 1 = 2 Volt
here VP > Vn (so diode cannot be in reverse bias mode).
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so current Ib = 0 - 3 + 10 - 3
4 4
Ib = 10 - 6 = 1 amp
4
Sol. 141 Option (D) is correct.
Applying node equation at terminal (2) and (3) of OP -amp
Va - Q Va - V0
+ =0
5 10
2Va - 4 + Va - V0 = 0
V0 = 3Va - 4
Va - V0 + Va - 0 = 0
100 10
Va - V0 + 10Va = 0
11Va = V0
Va = V0
11
So V0 = 3V0 - 4
11
8V0 =- 4
11
V0 =- 5.5 Volts
Sol. 142 Option (B) is correct.
Circuit with diode forward resistance looks
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