BE3252 QB Unit4
BE3252 QB Unit4
QUESTION BANK
BE3252 - Basic Electrical, Electronics and Instrumentation Engineering
PART-B
1 Report on V-I Characteristics of diode. Mention the applications of zener diode.
(Nov/Dec 2021)
2 Explain the working and breakdown phenomenon in PN junction diode with VI
characteristics.
3 Explain the mechanism of Zener breakdown and Avalanche breakdown. (Nov/Dec
2019)
4 What are P type and N type materials and how they are obtained? (Apr/May 2018)
5 Discuss the operation of common base (CB) configuration transistor. (Nov/Dec 2022)
6 Illustrate and explain the input-output characteristics of a Bipolar junction Transistor
under common emitter (CE) configuration. (Nov/Dec 2020)
7 For the fixed biased configuration of transistor as shown in Fig. . Evaluate.
a) Base and collector currents (IBQ and ICQ)
b) Collector-Emitter Voltage (VCEQ)
c) Base, collector and Emitter Voltages (VB, VC and VE). (Nov/Dec 2020)
8 Explain the construction and working of SCR and draw its input, output
characteristics.
9 Performance of full-wave is better than half-wave rectifier. Justify the statement by
ripple factor and efficiency of rectifier. (Nov/Dec 2022)
10 Explain the working of a depletion type IGBT with relevant sketches. (Nov/Dec 2022)
11 Describe the working of bridge rectifier. Derive its ripple factor.
12 Explain the operation of single phase inverter with waveforms.
13 Describe about the constructional details and different modes of operation of JFET.
14 Explain the working principle of MOSFET and sketch the VI characteristics of
enhancement type MOSFET. (Apr/May 2022)
15 Explain the operation of a Half wave rectifier and full wave rectifier its various
parameters. Compare HWR with FWR. (Nov/Dec 2019)