AN27701 Hall Effect IC Application Guide
AN27701 Hall Effect IC Application Guide
Allegro™ MicroSystems uses the latest integrated circuit Sensitive Circuits for Rugged Service
technology in combination with the century-old Hall The Hall-effect sensor IC is virtually immune to environ-
effect to produce Hall-effect ICs. These are contactless, mental contaminants and is suitable for use under severe
magnetically activated switches and sensor ICs with the service conditions. The circuit is very sensitive and provides
potential to simplify and improve electrical and mechanical reliable, repetitive operation in close-tolerance applications.
systems. The Hall-effect sensor IC can see precisely through dirt and
darkness.
Low-Cost Simplified Switching
Simplified switching is a Hall sensor IC strong point. Hall- Applications
effect IC switches combine Hall voltage generators, signal Applications for Hall-effect ICs include use in ignition sys-
amplifiers, Schmitt trigger circuits, and transistor output tems, speed controls, security systems, alignment controls,
circuits on a single integrated circuit chip. Output is clean, micrometers, mechanical limit switches, computers, print-
fast, and switched without bounce (an inherent problem with ers, disk drives, keyboards, machine tools, key switches,
mechanical contact switches). A Hall-effect switch typically and pushbutton switches. They are also used as tachometer
operates at up to a 100 kHz repetition rate, and costs less pickups, current limit switches, position detectors, selec-
than many common electromechanical switches. tor switches, current sensor ICs, linear potentiometers, and
brushless DC motor commutators.
Efficient, Effective, Low-Cost Linear Sensor ICs
The linear Hall-effect sensor IC detects the motion, position, The Hall Effect: How Does It Work?
or change in field strength of an electromagnet, a perma- The basic Hall element is a small sheet of semiconductor
nent magnet, or a ferromagnetic material with an applied material, referred to as the Hall element, or active area,
magnetic bias. Energy consumption is very low. The output represented in figure 1.
is linear and temperature-stable. The sensor IC frequency
response is flat up to approximately 25 kHz.
A Hall-effect sensor IC is more efficient and effective than
inductive or optoelectronic sensors, and at a lower cost. +VCC
+VHALL
–VHALL
Abbreviated Contents
Low-Cost Simplified Switching 1
Getting Started 5
Ring Magnets Detailed Discussion 14
Ferrous Vane Rotary Activators 17
Enhancement Considerations 24
Advanced Applications 36 Figure 1. Schematic representation of the active area of a Hall-effect
device, with the Hall element represented by the component marked
Glossary 40
with an X.
27701-AN, Rev. 2
A constant voltage source, as shown in figure 2, forces a con- If the biased Hall element is placed in a magnetic field with flux
stant bias current, IBIAS , to flow in the semiconductor sheet. The lines at right angles to the bias current (see figure 3), the volt-
output takes the form of a voltage, VHALL , measured across the age output changes in direct proportion to the strength of the
width of the sheet. In the absence of a magnetic field, VHALL has magnetic field. This is the Hall effect, discovered by E. F. Hall in
a negligible value. 1879.
IBIAS IBIAS
0 0
– + VHALL ≈ 0 V – + VHALL → V+
Figure 2. VHALL in the absence of a significant magnetic field Figure 3. Hall effect, induced VHALL, resulting from significant magnetic
flux (green arrows) perpendicular to the bias current flow.
Operation
All Hall-effect devices are activated by a magnetic field. A mount
for the devices and electrical connections must be provided.
Parameters such as load current, environmental conditions, and Reg.
VCC
supply voltage must fall within the specific limits shown in the
datasheet. Output
Magnetic fields have two important characteristics: magnetic flux
density, B (essentially, field strength), and magnetic field polarity
(north or south). For Hall-devices, orientation of the field relative
to the device active area also is important. The active area (Hall
element) of Hall devices is embedded on a silicon chip located Ground
parallel to, and slightly inside of, one particular face of the pack- Figure 7. Common circuit elements for Hall switches
Hysteresis
12 Off 12 Off
Deivce Switch State
Operate Operate
Point, BOP Point, BOP
6 6
Release
Point, BRP
3 3
On On
0 0
0 100 200 300 400 500 600 0 100 200 300 400 500 600
Magnetic Flux Density, B (G) Magnetic Flux Density, B (G)
Figure 9. Transfer characteristics of a Hall switch being activated Figure 10. Transfer characteristics of a Hall switch being deactivated
(switched on) by the increase in magnetic flux density from an (switched off) by the decrease in magnetic flux density from an receding
approaching south pole south pole
AG
property is desirable for digital Hall devices, but for more subtle
AAD reasons. To achieve consistent switching action in a given appli-
300 cation, the Hall device must switch on and off at the same posi-
tions relative to the magnet.
Total Package N S
Contribution To illustrate this concept, consider the flux density curves from
200 Active
Magnet two different magnet configurations, in figure 14. With an oper-
area
ate-point flux density of 200 G, a digital Hall-effect device would
Branded
100 face turn on at a distance of approximately 3.6 mm in either case. If
Device
manufacturing tolerances or temperature effects shifted the oper-
ate point to 300 G, notice that for curve A (steep slope) there is
0
very little change in the distance at which switching occurs. In
0 1.3 2.5 3.8 the case of curve B, the change is considerable. The release point
Total Effective Air Gap, TEAG (mm) (not shown) would be affected in much the same way. The basic
principles illustrated in this example can be modified to include
Figure 12A. Definition of total effective air gap, active area depth, and
mechanism and device specification tolerances and can be used
demonstration of the effects of the package itself on magnetic signal for worse-case design analysis. Examples of this procedure are
strength (for specifications of the magnet used for this data, see figure 25) shown in later sections.
1000 S
N
400
N S
200
0
0 1.3 2.5 3.8 5.1 6.4 7.6 8.9 10.2 Alinco 8 Magnet
Total Effective Air Gap, TEAG (mm)
G
TEA
S
N
1000
Mo
D tio
Magnetic Flux Density, B (G)
n
800
Ø5.4 mm
4.8 mm TEAG
600
400
N S
200
0
0 1.3 2.5 3.8 5.1 6.4 7.6 8.9 10.2 Alinco 8 Magnet
Distance Between Centerlines of Magnet
and Hall Element, D (mm)
G
TEA
S
N
1000
Mo
tio
Magnetic Flux Density, B (G)
n
800
Ø5.4 mm
4.8 mm TEAG
600
(A)TEAG = 1.3 mm
400
N S
200
(B)TEAG = 2.5 mm
0
0 1.3 2.5 3.8 5.1 6.4 7.6 8.9 10.2 Alinco 8 Magnet
Distance Between Centerlines of Magnet
and Hall Element, D (mm)
Figure 14. Example of slide-by mode of operation, comparing the effects of two
different Total Effective Air Gaps
Magnet
Hall device
VCC Output
Common
Figure 16. Typical configurations for vane interruptors: (A) disk, (B), linear, Figure 17. Hall-effect device with open-collector output stage (illustration
and (C) cup of Hall circuit simplified for clarity in later figures)
10 kΩ 47 kΩ
TTL CMOS
Output
Output
Common
Common
Figure 18A. TTL logic interface Figure 18B. CMOS logic interface
560 Ω 56 Ω
1 kΩ Q2
Q1
Output Output
Common Common
Figure 19. Example of small (≤20 mA) sinking current load being driven Figure 20. Example of driving a moderate (>20 mA) sinking current load
directly
VCC = +12 V
115 VAC
4.7 kΩ
1.2 kΩ
Load
Output
40 mA
Common
Figure 21. Example of a relay-driving application, sourcing current in the Hall device Off state
Motion
Motion
Magnets
Magnet
Figure 22. Typical configurations for rotors: (A) magnetic, and (B) ferrous vane
1000
Magnetic Flux Density, B (G)
800 N
S S
600
400 180° 0°
N
200 S S
0 N
-200
TEAG =
-400 1.7 mm
-600
-800 25.4 mm
-1000
0 90 180 270 360
Magnet Rotation (deg.) Ceramic, 4 Pole Pairs
Axial Poles
Figure 24. Magnetic flux characteristic of a ring magnet
400
N S NS N S N
NS
Magnetic Flux Density, B (G)
S
S N
N
SN S S
N S NS
300
S S
Package
SN
N
contribution
SN
N
N
200 N
S
SN
SN S N S
5.1 mm TEAG
100
3.2 mm
0 25.4 mm
0 1.3 2.5 3.8
Total Effective Air Gap, TEAG (mm) Plastic 1, 20 Pole Pairs
Radial Poles
Figure 25. Demonstration of the effect of narrow pole pitch on magnetic signal strength
7.5 BOP
B BHYS(min) Minimum ∆B
–7.5 BRP
VOUT Minimum ∆B
Magnetic Flux Density, B (G)
45 BOP(max)
BHYS(min) Unipolar mode unit
30 BRP(max)
7.5 BOP
BHYS(min) Latch mode unit
–7.5 BRP
–25 BOP(min)
BHYS(min) Negative unipolar mode unit
–40 BRP(min)
Figure 26A. Demonstration of possible switchpoint ranges for a bipolar switch, for use with low magnetic flux amplitude, narrow pitch
alternating pole targets
Figure 27. Demonstration of rubber magnet stock layout for inexpensive Figure 28. Demonstration of nylon bushing for inexpensive ring magnet
ring magnet
Figure 29. Demonstration of assembled inexpensive ring magnet Figure 30. Demonstration of adjustment of ring magnet to 180° on and
180° off
400
S N S N
Magnetic Flux Density, B (G)
S
S N
N
300
S
N
N
S
S
200 N N
S N S
5.1 mm TEAG
100
3.2 mm
0 25.4 mm
0 1.3 2.5 3.8
Total Effective Air Gap, TEAG (mm) Plastic 1, 10 Pole Pairs
Radial Poles
Figure 31. Example of magnetic flux density versus air gap for Plastic 1 ring magnet
400
Magnetic Flux Density, B (G)
300
N
200
TEAG
100
5.1 mm
3.2 mm
0 19.1 mm
0 1.3 2.5 3.8
Total Effective Air Gap, TEAG (mm) Alinco 8, 1 Pole Pair
Axial Poles
Figure 32. Example of magnetic flux density versus air gap for Alinco 8 ring magnet
S N
400
Magnetic Flux Density, B (G)
300
N
S
200
S N
100 6.4 mm TEAG
0 19.1 mm
0 1.3 2.5 3.8 44.5 mm
Total Effective Air Gap, TEAG (mm) Ceramic 1, 3 Pole Pairs
Radial Poles
Figure 33. Example of magnetic flux density versus air gap for Ceramic 1 ring magnet
400
Magnetic Flux Density, B (G)
S
N
N
300
With flux
S
concentrator
N
200 S
Without flux
concentrator 6.4 mm TEAG
100
Concentrator
6.4 mm Ø3.2 mm
0 19.1 mm L = 6.4 mm
0 1.3 2.5 3.8
Total Effective Air Gap, TEAG (mm) Ceramic 1, 4 Pole Pairs
Radial Poles
Figure 34. Example of magnetic flux density versus air gap for Ceramic 1 ring magnet, showing comparative results with a cylindrical ferrous flux
concentrator attached to back side of a Hall device case
Initially, when the vane is located entirely to the left of the A Hall switch located in the position of the sensor IC would
magnet, the vane has no effect and the flux density at the ele- initially be on because of the presence of the magnetic field.
ment is at a maximum of 800 G. As the leading edge of the vane Somewhere in the linearly decreasing region, the flux would fall
below the release point, and the Hall switch would turn off. It
Cup target
Magnet N Device
S Vane
Vane Magnet
TEAG
(22.5°)
Hall
Device Element
Case
Top View
Side View
1000
Magnetic Flux Density, B (G)
800
600
Effective Vane
Width (24°)
400 Operate
Release Point, BOP
200 Point, BRP
Actual Vane
Width (22.5°)
0
60 40 20 0 20 40 60
Vane Travel (deg.)
Figure 35. Rotary single-vane assembly and characteristic magnetic profile, using a samarium cobalt
magnet and Ø65 mm ferrous cup target (150 G/deg.)
The disk is easily fabricated and, hence, is often used for low- In table 2, the maximum flux density (obtained with window cen-
volume applications such as machine control. Axial movement tered over the magnet, the minimum flux density (vane centered
of the rotor must be considered. Vane-activated switches tolerate over the magnet), and the difference between the two values are
this quite well, but the rotor must not hit the magnet or the Hall tabulated for three cases:
switch. • Vane and window width the same as magnet pole width
Cup rotors are somewhat more difficult to fabricate and so are • Vane and window width one and one-half times magnet pole
more expensive, but dealing with a single radial distance simpli- width
fies calculations and allows precise control of the output wave- • Vane and window width two times the magnet pole width
forms. For cup rotors, radial bearing wear or play is the signif-
icant factor in determining the clearances, while axial play is rela- In each sample, the magnet is 6.4 × 6.4 × 3.2 mm samarium
tively unimportant. Cup rotors have been used very successfully cobalt, the air gap is 0.3 mm, and the rotor vanes are made of
in automotive ignition systems. The dwell range is determined 1 mm mild-steel stock.
by the ratio of the vane-to-window widths when the rotor is If a small rotor with many windows and vanes is required, a
miniature rare-earth magnet must be used to ensure sufficient
flux density for reliable operation. For example, a 2.5 mm cubical
samarium cobalt magnet makes it practical to fabricate a 31.8 mm
diameter rotor with as many as 10 windows and vanes. With
fewer vanes, even further size reduction is possible.
Table 2. Magnetic Flux Density, B, at Various Vane and Window Positions and Relative Dimensions
Vane and Window Width Factor Relative to Magnet Pole Face
Position Relative to Magent Centerline
1.0 × 1.5 × 2.0 ×
Window centered 630 G 713 G 726 G
Vane centered 180 G 100 G 80 G
Window centered - Vane centered 450 G 613 G 646 G
1000
Magnetic Flux Density, B (G)
600
Magnetic slope =
98 G/mm
400
200 1.0 mm
0.5 mm
0
-7.6 -5.1 -2.5 0 2.5 5.1 7.6
Vane Position (mm)
Figure 37. Comparison of two applications, for flux density versus vane travel, showing linearity in the transition regions, despite varying rates
900 5
6
800 7
600
500 Concentrator
Device
Vane
Magnet
400
CL
300 Concentrator
(if used)
Device
Branded
Face
200 Air Gap
D
Vane S
100 N Magnet
0
-5.1 -3.8 -2.5 -1.3 0 1.3
Figure 38. Relative strength of magnetic field using two sample samarium cobalt magnets, versus
variances in air gap and flux concentrator usage (see key table)
5 2.5 307 No
6 3.0 248 No
7 3.0 220 Yes
8 3.0 177 No
Note: Samples using two samarium cobalt cubic magnets, Allegro U package
*Concentrator cylindrical, composed of mild steel, Ø3.2 mm, length 6.4 mm, attached to non-branded
face of the Allegro U package case
600
Magnetic Flux Density, B (G)
500
25°C maximum
Magnetic slope = Operate Point
223 G/mm
400 125 G/distributor degree
25°C minimum
300 Operate Point
25°C minimum
200 Release Point
100
0
–5.1 –3.8 –2.5 –1.3 0 1.3 2.5 3.8 5.1
Distance Between Vane Leading (–) or Trailing (+) Edge
and Centerline of Magnet / Hall Element (mm)
Figure 39. Design example of magnetic characteristic of a single-vane cup target (showing only magnetic flux transition regions)
700
600
Magnetic Flux Density, B (G)
500 1.9 mm
(C) 125°C Operate
Magnetic slope = 1.5 mm 1.5 mm Point (445 G)
223 G/mm
400 125 G/distributor degree
1 mm (A) 25°C Operate
(D)125°C Release
300 Point (360 G) Point (375 G)
100
0
–5.1 –3.8 –2.5 –1.3 0 1.3 2.5 3.8 5.1
Distance Between Vane Leading (–) or Trailing (+) Edge
and Centerline of Magnet / Hall Element (mm)
Figure 40. Design example of magnetic characteristic of a single-vane cup target (showing only magnetic flux transition regions), showing effects of
temperature change on switchpoints
AAD
N S
0 VOQ
0 2.5 5.1 7.6 10.2 12.7
Total Effective Air Gap, TEAG (mm)
+ VCC
Relative Magnetic Flux Density, B
TEAG
5.3 mm
TEAG = 1.3 mm
Relative Output Voltage
TEAG = 1.9 mm N S
D
TEAG = 2.4 mm
0 VOQ
0 1.3 2.5 3.8 5.1 6.4
Distance Between Centerlines of Magnet
and Hall Element, D (mm)
Figure 42. Example of effect of lateral displacement on the magnetic flux characteristic in slide-by configuration
n
tio
Mo
Mo
tio
n
Figure 43. Examples of compound magnet configurations (either the Hall device or the magnet assembly can be stationary), with a south pole toward the
branded face and a north pole toward the back side: (left) push-pull head-on and (right) push-pull slide-by
2000
Magnetic Flux Density, B (G)
3.6 mm
1600
1200
Magnetic Slope = NS NS
–315 G / mm
800 D
400
Back face
0
0 1.3 2.5 3.8 5.1 6.4 Branded face
Distance Between Centerlines of Magnet
and Hall Element, D (mm)
Figure 44. Example of magnetic flux characteristic in push-pull slide-by magnet configuration
n
tio
Mo
Figure 45. Example of a push-push head-on compound magnet configuration (either the Hall device or the magnet assembly can be stationary), with
south poles toward both the branded face and the back side
500 Ø5.4 mm
Magnetic Flux Density, B (G)
100
0 N S S N
-300
Alinco 8 Magnets
-500
-1.5 -1.0 -0.5 0 0.5 1.0 1.5
Magnet Assembly Travel (mm)
Figure 46. Example of push-push head-on mode magnet configuration, in which the fields cancel in the middle of the travel range
Branded
Branded face
face S
N
Back-biasing
S Mo magnet
N N tio N
n
S S
n
tio Back-biasing
Mo magnet
Figure 47. Examples of back-biasing magnet configuration, (left) slide-by and (right) head-on
5.3 mm
+ VCC
4.8 mm
Relative Magnetic Flux Density, B
0 VOQ SN SN
Single
Relative Output Voltage
N S
magnets
– GND
S N
+ VCC NS NS
D
Compound VOQ
0
magnets
– GND
-2.5 -2.0 -1.5 -1.0 0 1.0 1.5 2.0 2.5
Distance Between Centerline of Magnet
and Hall Element, D (mm) Compound Single
magnets magnets
Figure 48. Examples of slide-by motion, magnets on both sides; compound and single magnets
N
0 VOQ
D
– GND
-10.0 -7.5 -5.0 -2.5 0 2.5 5.0 7.5 10.0
Distance Between Centerline of Magnet
and Hall Element, D (mm)
Figure 49. Example of slide-by motion, magnet on one side, single magnet
Compound Magnet
1000
Alinco 6
Magnetic Flux Density, B (G)
Ø6 mm
4.8 mm
500
S N
0 N S
Magnetic Slope =
D
–394 G / mm S N
–500
TEAG = 1 mm
–1000
-3 -2 -1 0 1 2 3
Distance Between Centerline of Magnet
and Hall Element, D (mm)
Figure 50. Example of slide-by motion, magnets on one side, compound magnets
Flux paths
Flux paths
Mild steel
NS
NS
Hall device
Magnet Magnet Hall device
Figure 51. Typical magnetic field generated as magnetic flux passes Figure 52. Demonstration of use of mild steel to provide a low-reluctance
through free air, with only a small portion passing through the Hall device path for magnetic flux, with a preponderance passing through the Hall device
Magnet Magnet
samarium cobalt samarium cobalt
□6.4 mm □6.4 mm
Concentrator
Ø3.2 mm
SN SN
B = 187 G B = 291 G
Figure 53. Effect of back-side flux concentrator on magnetic flux intensity: (A) without concentrator and (B) with concentrator
SN SN SN
3.2 mm
Mounting the Magnet to a Ferrous Plate
B = 357 G
Mounting the magnet to a ferrous plate gives an additional
increase in flux density at the Hall element. Using the same
configuration as in figure 54C, which produced 291 G, note the
available flux attained in figures 56A and 56B with the addition Figure 56A. Effect of 12.7 mm2 additional flux concentrator, attached to
of the ferrous plate. magnet
200
S
N
N
S
S
N
0
S
0 12.7 25.4
Concentrator Length (mm)
Dimple
Figure 55. Effect of back-side flux concentrator length, using a samarium Figure 57. Demonstration of mesa-type bracket and flux concentrator
cobalt magnet of Ø3.2 mm and AG = 6.4 mm
Magnet
Samarium Cobalt
□3.2 mm
400
Magnetic Flux Density, B (G)
300 L
(A) With flux
concentrator
N S
200
0.8 mm
100
(B) Without flux
concentrator Flux
concentrator
Feed-through
0 conductor
0 3.2 6.4 9.5 12.7 15.9 Ø3.2 mm
Feed-Through Conductor Length, L (mm)
Figure 59. Example of feed-through conductor length effect on magnetic flux, with and without a flux concentrator on the device
Branded face
Branded face
Figure 64. Examples of application of Hall devices for monitoring mechanical events: (left) north pole adjacent to sense the absence of ferrous material,
(right) south pole adjacent to sense the presence of ferrous material
0.381 mm MAX
0.254 mm
Concentrator
Magnet
S N
Branded face
+15 V
Ø0.8 mm S
1 MΩ
N 270 Ω
3.3 kΩ
3.2 mm +5 V
VCC
1 kΩ
Output
Ø1.6 mm
Ground 10 kΩ
Figure 70. Printer drum sensing application flux concentrator Figure 71. Printer drum typical application circuit