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9 views

sheet 1 (1)

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mariomavolley
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AIN SHAMS UNIVERSITY 3rd Year Electrical Power

Electric Power and Machines Dept. Fall 2023


Faculty of Engineering Sheet 1

Power Electronics 1 (EPM351s)


1. Discuss the factors to be considered in selecting a power diode for a certain application.

2. Two diodes are put in parallel in plain connection. One diode has an approximate characteristic of
V = [0.9 + (2.4 ×10-4i)] V, and the other diode V = [1.0 + (2.3 ×10-4i)] V.
 Determine the current taken by each diode if the total current is: 500A, 1000A, 1500A, and 2000A.
 Determine the value of equal resistors which, when placed in series with the diodes, will in total current
of 2000A bring current to within 10% of equal current sharing.

3. Two diodes are connected in series and equal voltage sharing is maintained such that 𝑉 =𝑉 =
2000 𝑉. The v-i characteristics is shown in Fig.1. If 𝑅 = 125 𝑘Ω, find the leakage current of each
diode and the resistance connected with the second diode.

Fig.1

4. Two diodes are connected in parallel with current sharing resistors. The v-i characteristic is shown in
Fig.1. The total current is 200A and the voltage across each diode and its resistance is 2.5V. Determine
the resistance connected for equal current sharing.
5. Explain the meaning of “latching power switch” and which device from the power electronics switches
is latched. Which device from the power electronics switches are current-controlled and non-latching
switch? Why?

6. Design a snubber circuit for a thyristor feeding a resistive load of 5 from a 200V power supply. The
switching frequency of the thyristor is 2KHz. The discharge current should be limited to 100 A and the
dv/dt is 100V/µs.

7. A snubber circuit consists of [ 𝑹𝒔 = 𝟒 𝛀, 𝑪𝒔 = 𝟏𝟐 𝒏𝑭] is used to protect a thyristor feeding a resistive


load of 5  from a 200V power supply. The switching frequency of the thyristor is 2 KHz. If the limiting
value of the charging current to turn on the thyristor is 16 mA. Determine:
a) The discharging current of capacitor.
b) The critical value of the dv/dt.
c) The capacitance of reverse-biased junction.

8. The thyristor latching current in Fig.2 is 50 mA and the gate duration pulse is 50 µs. If the diode leakage
current is 10 mA. Find the value of the resistor R to ensure a successful turn on.

Fig.2
9. A transistor dissipating a power of 10 W. The thermal resistance between the transistor and the ambient
is 2 °C/W. The ambient temperature is 25 °C. What is the temperature of this transistor?

10. A thyristor is used in a circuit in which the switching losses is 0.21 joule, Forward blocking loss =
Reverse blocking loss = 7.5 watts. For a switching frequency of 250 Hz and duty cycle of 0.5, calculate:
a) Thyristor power losses in watts.
b) The required heat sink thermal resistance. Assume that the Ambient temperature = 40C.
The following information are given in the data sheet of the thyristor:
 Current rating of 125A for which the forward voltage drop is 1.5 V.
 Maximum junction temperature = 125C,
 Rth jc = 0.15 C/w, Rth cs = 0.075 C/w

11. Two thyristors are mounted on the same heat sink. If the power loss in each one is 200 W. Find the heat
sink thermal resistance.
Useful Data
For each thyristor Rjc = 0.2 °C/W, Rcs = 0.05 °C/W.
The ambient temperature = 40 °C and the junction temperature is 150 °C.

12. Fig.3 shows the current and voltage trajectories of a soft-switched IGBT. Assuming linear switching
transitions, for a 10KHz switching rate with 50% duty cycle. Determine:
a. Average power dissipation.
b. The required heat sink thermal resistance.
The following information are given from the data sheet of the IGBT:
Maximum junction temperature = 125°C, Rth jc = 0.15°C/W, Rth cs = 0.075°C/W.
Assume that the Ambient temperature = 40°C.

Fig.3

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