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Assignment 2 Solution (1)

The document provides detailed solutions for an assignment on the design of a synchronous buck-boost converter using the MOSFET 'IRFB7545PbF'. It includes specific values from the MOSFET datasheet such as current rating, voltage rating, capacitance, and thermal resistance, as well as questions regarding the characteristics and comparisons of different semiconductor devices. Additionally, it covers true/false statements regarding the properties of IGBT, MOSFET, and BJT devices.

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2 views

Assignment 2 Solution (1)

The document provides detailed solutions for an assignment on the design of a synchronous buck-boost converter using the MOSFET 'IRFB7545PbF'. It includes specific values from the MOSFET datasheet such as current rating, voltage rating, capacitance, and thermal resistance, as well as questions regarding the characteristics and comparisons of different semiconductor devices. Additionally, it covers true/false statements regarding the properties of IGBT, MOSFET, and BJT devices.

Uploaded by

nikhitha C
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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NPTEL Online Certification Course

<Design of Power Electronics converter>


<Assignment Number 2>: Detailed Solution
Indian Institute of Technology Guwahati
The MOSFET “IRFB7545PbF” is chosen for the synchronous buck-boost converter. You need to read the
datasheet of MOSFET. After studying the datasheet, enter the following values:

1. Continuous current rating at 100°C … (A).

Answer. 67

2. Voltage rating … (V).

Answer. 60

3. Input capacitance … (pF).

Answer. 4010

4. Reverse Transfer capacitance … (pF).

Answer. 230

5. Maximum total gate charge … (nC).

Answer. 110

6. Maximum gate to source threshold voltage … (V).

Answer. 3.7

7. Maximum ON state resistance, RDS-on … (mΩ).

Answer. 5.9

8. Typical turn ON time … (ns).

Answer. (12+72) = 84

9. Junction to case thermal resistance, Rϴjc … (οC /W).

Answer. 1.21

10. Typical reverse recovery time of the body diode at 125°C … (ns).

Answer. 37

11. dv/dt limit for the body diode … (V/ns).

Answer. 12
12. Typical Case to sink thermal resistance, Rϴcs … (οC /W).

Answer. 0.5

13. Typical turn OFF time of MOSFET … (ns).

Answer. (44+43) = 87

14. Maximum junction temperature … (οC).

Answer. 175

15. Calculate the typical value of the reverse recovery current Irr at 25°C … (A).
1
Answer. 𝑄𝑟𝑟 = 2 𝐼𝑟𝑟 𝑡𝑟𝑟 ⇒ 36 × 10−9 = 0.5 × 𝐼𝑟𝑟 × 33 × 10−9 ⇒ 𝐼𝑟𝑟 = 2.18 𝐴

16. Which of the following statement(s) below is/are true?


a) IGBT and MOSFET are voltage-controlled devices.
b) BJT is current controlled device.
c) IGBT is current controlled and MOSFET is voltage-controlled device.
d) IGBT and MOSFET are current controlled devices.
b) BJT is voltage-controlled device.

17. The softness factor S, for fast recovery diode is:


a) equal to zero
b) equal to one
c) greater than one
d) less than one

18. Rearrange the devices in ascending order based on their switching speed.
a) Schottky diodes < Rectifier diodes < Fast recovery diodes.
b) Fast recovery diodes < Schottky diodes < Rectifier diodes.
c) Rectifier diodes < Fast recovery diodes <Schottky diodes.
d) Rectifier diodes < Schottky diodes < Fast recovery diodes.

19. Point out which statement(s) below is/are true.


a) MOSFET have higher switching loss and lower conduction than BJT.
b) MOSFET have lower switching loss and higher conduction than BJT.
c) On-state voltage drop of MOSFET is higher than BJT.
d) On-state voltage drop of MOSFET is lower than BJT.

20. Which of the following statement(s) below is/are true?


a) IGBT and MOSFET are unidirectional currents and bipolar voltage devices.
b) IGBT and MOSFET are unidirectional currents and unipolar voltage devices.
c) IGBT and MOSFET are bidirectional currents and unipolar voltage devices.
d) IGBT and MOSFET are bidirectional currents and bipolar voltage devices.

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