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Region of Operation of Mosfet

The document discusses the different regions of operation for a MOSFET transistor: accumulation, diffusion, and inversion layer (conduction layer). It explains how applying appropriate voltages to the gate allows the MOSFET to control current flow between the source and drain, operating as a switch or amplifier.

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sparsh kaudinya
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115 views

Region of Operation of Mosfet

The document discusses the different regions of operation for a MOSFET transistor: accumulation, diffusion, and inversion layer (conduction layer). It explains how applying appropriate voltages to the gate allows the MOSFET to control current flow between the source and drain, operating as a switch or amplifier.

Uploaded by

sparsh kaudinya
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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REGION OF

OPERATION OF
MOSFET
1. ACCUMULATION
2. DIFFUSION
3. INVERSION LAYER ( CONDUCTION LAYER )
Representation: For Nmos

These regions collectively enable


the operation of the MOSFET as a
voltage-controlled switch or
amplifier. By applying appropriate
voltages to the gate, the MOSFET
can control the flow of current
between the source and the drain.
Pattern for Understanding working

1. Check the mosfet is on or off.


2. Check the region in which mosfet is working.
Different region of working

1. Cutoff region- In the cutoff region, the MOSFET is off


and there is no significant current flowing between the
source and the drain. This occurs when the gate-source
voltage (VGS) is below the threshold voltage (Vth) for the
MOSFET. In this region, the channel is depleted, and the
MOSFET acts as an open circuit.
2. Saturation region- MOSFET operates as a voltage-
controlled resistor or amplifier. The VGS is higher than
Vth, and as a result, a channel is formed between the
source and the drain. The current flowing through the
channel is proportional to the VGS - Vth and can be
controlled by varying the VGS. In this region, the
MOSFET operates as a linear device, with the drain
current (ID) increasing as the VGS increases.
3. Linear region- the MOSFET operates as a closed switch
or amplifier. The VGS is sufficiently high, such that the
channel is fully established between the source and the
drain. The ID is mainly controlled by the gate voltage and
less affected by the drain voltage (VDS). In this region, the
MOSFET operates in a more nonlinear manner, providing
a high level of current amplification.
Fabrication steps of mosfet:

1.Substrate Preparation: The process begins with preparing a silicon wafer, which serves as the substrate. The wafer is cleaned
and polished to remove any impurities or surface defects.
2.Oxide Layer Formation: A thin layer of silicon dioxide (SiO2) is grown or deposited on the wafer's surface. This layer acts as
the gate oxide, providing insulation between the gate electrode and the channel region.
3.Photolithography: A layer of photoresist is spin-coated onto the oxide layer. Photolithography is then performed, which
involves exposing the wafer to ultraviolet (UV) light through a photomask. The photomask contains the desired pattern for the
MOSFET's features.
4.Etching: The exposed photoresist is developed, leaving behind a patterned resist layer. Using the resist as a mask, a chemical
etching process is performed to remove the exposed portions of the oxide layer. This step defines the location of the gate region.
5.Gate Electrode Formation: A conductive material, such as doped polysilicon, is deposited on the wafer surface. The polysilicon
layer is then patterned using another round of photolithography and etching, creating the gate electrode structure.
6.Source and Drain Formation: Dopants (impurities) are introduced into the silicon wafer to create heavily doped regions for the
source and drain. This is typically done using ion implantation or diffusion techniques. The gate electrode acts as a mask during
this step, preventing dopants from reaching the channel region.
7.Source and Drain Annealing: The wafer is subjected to a high-temperature annealing process to activate the dopants and repair
any crystal damage caused during the implantation or diffusion steps.
8.Passivation Layer Deposition: A passivation layer, usually made of silicon nitride (Si3N4), is deposited on top of the wafer to
protect the underlying components and provide electrical insulation.
9.Contact Formation: Openings, called contact windows, are created in the passivation layer to expose the source, drain, and gate
regions. Metal contacts, typically aluminum or copper, are deposited and patterned in these openings to establish electrical
connections with the underlying regions.
Questions:

1. How Drain and Source is separated.


2. Why we use poly and properties of Its material.
3. Why we use contacts and properties of its material.
4. About the oxide under poly.

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