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Lab No:1 Comparative Analysis of Rectifier Diode and Schottky Diode Objectives

This document compares the characteristics of a rectifier diode and a Schottky diode. A Schottky diode has a lower forward voltage drop of 0.3-0.5V compared to 0.7V for a rectifier diode, due to majority carrier transport. It also has less reverse leakage current, lower power loss, and faster switching speed. These advantages make the Schottky diode suitable for applications like switched-mode power supplies, reverse current protection, and high-speed switching.

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syeda ume rubab
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197 views

Lab No:1 Comparative Analysis of Rectifier Diode and Schottky Diode Objectives

This document compares the characteristics of a rectifier diode and a Schottky diode. A Schottky diode has a lower forward voltage drop of 0.3-0.5V compared to 0.7V for a rectifier diode, due to majority carrier transport. It also has less reverse leakage current, lower power loss, and faster switching speed. These advantages make the Schottky diode suitable for applications like switched-mode power supplies, reverse current protection, and high-speed switching.

Uploaded by

syeda ume rubab
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Lab No:1

Comparative Analysis of Rectifier Diode and Schottky Diode


Objectives:
 To compare rectifier diode and schottky diode.
 To observe characteristics of rectifier diode and schottky diode, like:
a. Characteristic Curve
b. Reverse Leakage Current
c. Power Loss
d. Switching Speed

Theoretical Background
Schottky Diode:
A Schottky Diode is a metal-semiconductor diode with a low forward voltage drop and a very fast
switching speed.

V-I Characteristics of Schottky Barrier Diode:

The V-I characteristics of a Schottky barrier diode are below:

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 The forward voltage drop of the Schottky barrier diode is very low compared to a normal PN
junction diode.
 The forward voltage drop ranges from 0.3 volts to 0.5 volts.
 The forward voltage drop of Schottky barrier is made up of silicon.
 The forward voltage drop increases at the same time increasing the doping concentration of N
type semiconductor.
 The V-I characteristics of a Schottky barrier diode are very steeper compared to the
V-I characteristics of normal PN junction diode due to the high concentration of
current carriers.

Current Components in Schottky Diode:


The current condition in this diode is through electrons (majority carriers) in N-type
semiconductor.

IDiffusion is diffusion current due to concentration gradient and diffusion current density
Jn=Dn*q*dn/dx
for electrons, where Dn is the diffusion constant of electrons, q is electronic charge
= 1.6*1019coulombs, dn/dx is a concentration gradient for electrons.
ITunneling is the tunneling current due to quantum mechanical tunneling through the barrier. The
probability of tunneling increases with the decrease in the barrier or built in potential and
decrease in depletion layer width. This current is directly proportional to the probability of
tunneling.
IThermionic emission is a current due to thermionic emission current. Due to thermal agitation, some
carriers have equal energy to or larger than the conduction band energy to the metal-
semiconductor interface, and to the current flow. This is known as thermionic emission current.

Advantages of Schottky Diode:


Advantages of Schottky diode are showing below-
 It has fast recovery time due to very low quantity of stored charge. So this diode is used
for high speed switching application.
 It has low turn on voltage.
 It has low junction capacitance.
 Voltage drop is low.

Disadvantages of Schottky Diode:


Disadvantages of Schottky diode are showing below-
 Reverse leakage current.
 Low reverse voltage rating.

Application of Schottky Diode:


 Used in Switched-mode power supplies.
 Used in reverse current protection.
 Used in discharge protection.
 Used in voltage clamping application.
 Used in RF mixer and Detector diode.

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 Used in solar cell application.

Difference between Schottky and Rectifier Diode:

Features Schottky diode P-N diode

It occurs due to thermionic


Forward emission. (majority carrier It occurs due to diffusion currents.
current transport) (minority carrier transport)

It is generated only due to It is generated due to minority carriers


majority carriers which diffusing to the depletion layer and
Reverse overcome the barrier. (It depends drifting to the other side. (It depends
current less on temperature.) more on temperature.)

Cut-in
voltage It is small about 0.3V. It is large about 0.7V.

It has high switching speed due


to majority carrier transport. No It is limited by recombination time of
Speed recombination time needed. injected minority carriers.

Ideality It is about 1 due to no It is about 1.2 to 2.0 due to


Factor recombination in depletion layer. recombination in depletion layer.

Procedure:
1. Make circuit in Multisim using resistors, rectifier diode, schottky diode and DC power
source.
2. Set values of components according to calculation.
3. Then select DC sweep analysis and draw V-I curves if both diodes.
4. Then observe which diode has more reverse leakage current.
5. Then select interactive mode and find power loss of each diode and observe which
diode has more power loss.
6. Then replace DC source with AC source and exchange positions of resistors and diode
in the circuit.
7. Then select Transient analysis and draw waveforms of current of both diodes and
observe which diode has more switching speed.

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Circuit Diagrams:

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Results:
Characteristic Curve:

Forward Voltage:

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Reverse Leakage Current:

Power Loss:

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Switching Speed:

Conclusion:
By using comparative analysis of rectifier diode and schottky diode, I concluded that schottky
diode has less forward voltage, less reverse leakage current, less power loss and more switching
speed than rectifier diode.

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