EXPERIMENT 1

P-N JUNCTION DIODE CHARACTERISTICS

AIM: To plot Volt-Ampere Characteristics of P-N Junction Diode.
1. To find cut-in Voltage for P-N Junction diode.
2. To find static and dynamic resistances in both forward and reverse biased conditions of
P-N Junction diode.
APPARATUS:
S.No Name of the Apparatus Range Quantity
1 Diodes IN 4007 1
2 Resistors 1KΩ, 100Ω 1
3 Regulated Power Supply (0-30)V DC 1
4 Bread Board 1
5 Digital Ammeter (0-200)μA/(0-200)mA 1
6 Digital Voltmeter (0-20)V DC 1
7 Connecting Wires As Required

THEORY:-
A p-n junction diode conducts only in one direction. The V-I characteristics of the diode
are curve between voltage across the diode and current through the diode. When external voltage
is zero, circuit is open and the potential barrier does not allow the current to flow. Therefore, the
circuit current is zero. When P-type (Anode is connected to +ve terminal and n- type (cathode) is
connected to –ve terminal of the supply voltage, is known as forward bias. The potential barrier is
reduced when diode is in the forward biased condition. At some forward voltage, the potential
barrier altogether eliminated and current starts flowing through the diode and also in the circuit.
The diode is said to be in ON state. The current increases with increasing forward voltage.
When N-type (cathode) is connected to +ve terminal and P-type (Anode) is
connected to –ve terminal of the supply voltage is known as reverse bias and the potential barrier
across the junction increases. Therefore, the junction resistance becomes very high and a very
small current (reverse saturation current) flows in the circuit. The diode is said to be in OFF state.
The reverse bias current due to minority charge carriers.
CIRCUIT DIAGRAM:

(i) FORWARD BIAS:

(ii) REVERSE BIAS:

PROCEDURE:

(i) FORWARD BIAS :

1. Connections are made as per the circuit diagram.
2. For forward bias, the RPS +ve is connected to the anode of the diode and RPS –ve is
connected to the cathode of the diode,
3. Switch ON the power supply and increases the input voltage (supply voltage) in Steps.
4. Note down the corresponding current flowing through the diode and voltage across the diode
for each and every step of the input voltage.
5. The readings of voltage and current are tabulated.
6. Graph is plotted between voltage on x-axis and current on y-axis.

PROCEDURE:
(ii) REVERSE BIAS :
1. Connections are made as per the circuit diagram.
2. For reverse bias, the RPS +ve is connected to the cathode of the diode and RPS –ve is
connected to the anode of the diode.
3. Switch ON the power supply and increase the input voltage (supply voltage) in Steps.
4. Note down the corresponding current flowing through the diode and voltage across the diode
for each and every step of the input voltage.
5. The readings of voltage and current are tabulated.
6. The Graph is plotted between voltage on x-axis and current on y-axis.

PRECAUTIONS:

1. While doing the experiment do not exceed the ratings of the diode. This may lead to
damage the diode.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as per
the circuit diagram.
V-I CHARACTERISTICS:

OBSERVATIONS:

S.No. Applied voltage Voltage across Current through Diode (mA)

(volts) Diode (volts)
OBSERVATIONS:
(a) For ‘Ge’:

S.No. Applied voltage Voltage across Current through Diode (µA)

(volts) Diode (volts)

CALCULATIONS:
1. Cut-in Voltage of diode is
(a) For ‘Ge’:
𝑽𝒇
(𝒊) 𝑺𝒕𝒂𝒕𝒊𝒄 𝒇𝒐𝒓𝒘𝒂𝒓𝒅 𝑹𝒆𝒔𝒊𝒔𝒕𝒂𝒏𝒄𝒆 (𝑹𝒅𝒄 ) =
𝑰𝒇

𝜟𝑽𝒇
(𝒊𝒊)𝑫𝒚𝒏𝒂𝒎𝒊𝒄 𝒇𝒐𝒓𝒘𝒂𝒓𝒅 𝑹𝒆𝒔𝒊𝒔𝒕𝒂𝒏𝒄𝒆 (𝒓 𝒂𝒄 ) =
𝜟𝑰𝒇

2. Reverse Bias:
(a) For ‘Ge
𝑽𝒓
(𝒊)𝑺𝒕𝒂𝒕𝒊𝒄 𝒓𝒆𝒗𝒆𝒓𝒔𝒆 𝑹𝒆𝒔𝒊𝒔𝒕𝒂𝒏𝒄𝒆 (𝑹 𝒅𝒄 ) = 𝑰𝒓

𝜟𝑽𝒓
(𝒊𝒊) 𝑫𝒚𝒏𝒂𝒎𝒊𝒄 𝒓𝒆𝒗𝒆𝒓𝒔𝒆 𝑹𝒆𝒔𝒊𝒔𝒕𝒂𝒏𝒄𝒆 (𝒓𝒂𝒄 ) =
𝜟𝑰𝒓
RESULT: The Forward and Reverse Bias characteristics for a p-n diode are observed. The cut- in
voltage, static and dynamic resistances in both forward and reverse biased conditions for P-N
Junction diode are found.

VIVA QUESTIONS:
1. Define depletion region of a diode?
2. What is meant by transition & space charge capacitance of a diode?
3. Is the V-I relationship of a diode Linear or Exponential?
4. Define cut-in voltage of a diode and specify the values for Si and Ge diodes?
5. What are the applications of a p-n diode?
6. Draw the ideal characteristics of P-N junction diode?
7. What is the diode equation?
8. What is PIV?
9. What is the break down voltage?
10. What is the effect of temperature on PN junction diodes?
EXPERIMENT 2.
ZENER DIODE CHARACTERISTICS AND ZENERDIODE AS A
VOLTAGE REGULATOR
AIM: 1. To observe and draw the V-I characteristics and Regulation characteristics of a
Zener diode.
2. To find the Zener Break down voltage in reverse biased condition.
3. To find the Static and Dynamic resistances of Zener diode in both forward
and reverse biased conditions.

APPARATUS:

S.No Name of the Apparatus Range Quantity

1 Zener Diode (IN 4735A) 1
2 Resistors 1KΩ, 10KΩ 1
3 Regulated Power Supply (0-30)V DC 1
4 Bread Board 1
5 Digital Ammeter (0-200)mA 1
6 Digital Voltmeter (0-20)V DC 1
7 Connecting Wires As Required

THEORY:
A zener diode is heavily doped p-n junction diode, specially made to operate in
the break down region. A p-n junction diode normally does not conduct when reverse biased. But
if the reverse bias is increased, at a particular voltage it starts conducting heavily. This voltage is
called Break down Voltage. High current through the diode can permanently damage the device
To avoid high current, we connect a resistor in series with zener diode. Once the
diode starts conducting it maintains almost constant voltage across the terminals what ever may
be the current through it, i.e., it has very low dynamic resistance. It is used in voltage regulators.

CIRCUIT DIAGRAM:
(i) V-I CHARACTERISTICS:

REGULATION CHARACTERISTICS:

PROCEDURE:
(i) V-I CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. The Regulated power supply voltage is increased in steps.
3. The zener current (lz), and the zener voltage (Vz.) are observed and then noted in the
tabular form.
4. A graph is plotted between zener current (Iz) on y-axis and zener voltage (Vz) on x-axis.

(ii) REGULATION CHARACTERISTICS:

1. Connections are made as per the circuit diagram.
2. The Regulated power supply voltage is increased in steps.
3. The voltage across the diode (Vz.) remains almost constant although the current through
the diode increases. This voltage serves as reference voltage.
4. The zener current (lz), and the zener voltage (Vz.) are observed and then noted in the
tabular form.
4. A graph is plotted between zener current (Iz) on y-axis and zener voltage (Vz) on x-axis.

PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the zener diode. This may lead to
damage the diode.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as per
the circuit diagram.
V-I & REGULATION CHARACTERISTICS:

OBSERVATIONS:

(i) V-I CHARACTERISTICS:

S.No Zener Voltage (VZ) Zener Current (IZ) (mA)

(volts)
(ii) REGULATION CHARACTERISTICS:

S.No Zener Voltage (VZ) Zener Current (IZ) (mA)

(volts)

CALCULATIONS:
1. Zener Break down Voltage is
2. Forward Bias:
𝑽𝒇
(𝒊) 𝑺𝒕𝒂𝒕𝒊𝒄 𝒇𝒐𝒓𝒘𝒂𝒓𝒅 𝑹𝒆𝒔𝒊𝒔𝒕𝒂𝒏𝒄𝒆 (𝑹𝒅𝒄 ) =
𝑰𝒇

𝜟𝑽𝒇
(𝒊𝒊)𝑫𝒚𝒏𝒂𝒎𝒊𝒄 𝒇𝒐𝒓𝒘𝒂𝒓𝒅 𝑹𝒆𝒔𝒊𝒔𝒕𝒂𝒏𝒄𝒆 (𝒓 𝒂𝒄 ) =
𝜟𝑰𝒇

3. Reverse Bias:

𝑽𝒓
(𝒊)𝑺𝒕𝒂𝒕𝒊𝒄 𝒓𝒆𝒗𝒆𝒓𝒔𝒆 𝑹𝒆𝒔𝒊𝒔𝒕𝒂𝒏𝒄𝒆 (𝑹 𝒅𝒄 ) = 𝑰𝒓

𝜟𝑽𝒓
(𝒊𝒊) 𝑫𝒚𝒏𝒂𝒎𝒊𝒄 𝒓𝒆𝒗𝒆𝒓𝒔𝒆 𝑹𝒆𝒔𝒊𝒔𝒕𝒂𝒏𝒄𝒆 (𝒓𝒂𝒄 ) =
𝜟𝑰𝒓
RESULT: The V-I characteristics and Regulation characteristics of a zener diode are observed.
The Zener Break down voltage in reverse biased condition, Static and Dynamic resistances of
Zener diode in both forward and reverse biased conditions are calculated.
i) The Zener Break down voltage is
ii) The Static foward resistance of Zener Diode is
iii) The Dynamic forward resistance of Zener Diode is
iv) The Static reverse resistance of Zener Diode is
v) The Dynamic reverse resistance of Zener Diode is

VIVA QUESTIONS:
1. What type of temperature Coefficient does the zener diode have?
2. If the impurity concentration is increased, how the depletion width effected?
3. Does the dynamic impendence of a zener diode vary?
4. Explain briefly about avalanche and zener breakdowns?
5. Draw the zener equivalent circuit?
6. Differentiate between line regulation & load regulation?
7. In which region zener diode can be used as a regulator?
8. How the breakdown voltage of a particular diode can be controlled?
9. What type of temperature coefficient does the Avalanche breakdown has?
10. By what type of charge carriers the current flows in zener and avalanche breakdown
diodes?
EXPERIMENT 3
FULL WAVE RECTIFIER WITH AND WITHOUT FILTER

AIM: 1. To obtain the load regulation and ripple factor of a full-wave rectifier by using
(a). without Filter
(b). with Filter
2. To observe the input and output waveforms of a full-wave rectifier.

APPARATUS:

S.No Name of the Apparatus Range Quantity

1 Diodes IN 4007 (Si) 2
2 Decade Resistance Box (1KΩ-10 KΩ) 1
3 Transformer 230 V AC 1
4 Capacitor 100µF 1
5 Bread Board
6 Digital Voltmeter (0-20)V (AC & DC) 2
7 Connecting Wires As Required

THEORY:
The circuit of a center-tapped full wave rectifier uses two diodes D1&D2.
During positive half cycle of secondary voltage (input voltage), the diode D1 is forward biased
and D2is reverse biased.
The diode D1 conducts and current flows through load resistor RL. During negative half
cycle, diode D2 becomes forward biased and D1 reverse biased. Now, D2 conducts and current
flows through the load resistor RL in the same direction. There is a continuous current flow
through the load resistor RL, during both the half cycles and will get unidirectional current as
show in the model graph. The difference between full wave and half wave rectification is that a
full wave rectifier allows unidirectional (one way) current to the load during the entire 360
degrees of the input signal and half-wave rectifier allows this only during one half cycle (180
degree).
CIRCUIT DIAGRAM:

(a) WITHOUT FILTER:

(b) WITH FILTER:

PROCEDURE:

1. Connections are made as per the circuit diagram.

2. Connect the primary side of the transformer to ac mains and the secondary side to the
rectifier input.
3. By using the multimeter, measure the ac input voltage of the rectifier and, ac and dc
voltage at the output of the rectifier.
4. Find the theoretical value of dc voltage by using the formula,
Vdc=2Vm/П
Where, V m= √2Vrms, (Vrms=output ac voltage.)
5. Now, the Ripple factor is calculated by using the formula
Γ = ac output voltage (Vac)/dc output voltage (Vdc)

6. By increasing the value of the resistance from 1 KΩ to 10KΩ, the voltage across the load
(VL) and current (IL) flowing through the load are measured.
7. Draw a graph between load voltage (VL) and load current (IL) by taking VL on X-axis and
IL on y-axis.
8. From the value of no-load voltage (VNL), the % regulation is to be calculated from the
theoretical calculations given below.

PRECAUTIONS:

1. The primary and secondary sides of the transformer should be carefully identified.
2. The polarities of the diode should be carefully identified.
While determining the % regulation, first Full load should be applied and then it should be
decremented in steps
INPUT AND OUTPUT WAVEFORMS:
THEORETICAL CALCULATIONS FOR RIPPLE FACTOR & % REGULATION:

(a) WITHOUT FILTER:

For a Full-Wave Rectifier,

Vrms=Vm/√2

Vdc=2Vm/П

Therefore, Ripple factor Γ=√ (Vrms/ Vdc )2 -1 = 0.482

% regulation = [(VNL-VFL)/VFL]*100

(b) WITH FILTER:

Ripple factor for a Full-Wave Rectifier is Γ=1/ (2√3 fRC).

Where f =50Hz

C =100µF

R= (1-10) KΩ

Therefore, for 1KΩ, Ripple factor, Γ = 0.0577

% regulation = [(VNL-VFL)/VFL]*100

OBSERVATIONS:

(a) WITH OUT FILTER:

VNL = V
Load
S.No Resistance Vac(v) Vdc(v) Γ= Vac/ Vdc % Regulation
(KΩ)
(b) WITH FILTER: VNL = V

Load
S.No Resistance Vac(v) Vdc(v) Γ= Vac/ Vdc % Regulation
(KΩ)
RESULT:
The Ripple factor and the % regulation for the Full-Wave Rectifier with and without filters are
calculated.
1. The Ripple factor of Full-Wave Rectifier without filter is
2. The Ripple factor of Full-Wave Rectifier with filter is
3. The % Regulation of Full-Wave Rectifier without filter is
4. The % Regulation of Full-Wave Rectifier with filter is

VIVA QUESTIONS:
1. What is the PIV of Half wave rectifier?
2. What is the efficiency of half wave rectifier?
3. What is a rectifier?
4. What is the difference between the half wave rectifier and full wave Rectifier?
5. What is the output frequency of Bridge Rectifier?
6. What are the ripples?
7. What is the function of a filter?
8. What is TUF?
9. What is the average value of output voltage for a HWR?
10. What is the peak factor?
EXPERIMENT 4
INPUT AND OUTPUT CHARACTERISTICS OF BJT IN CE
CONFIGURATION
AIM: 1. To draw the input and output characteristics of transistor connected in CE
Configuration
2. To find Input Resistance (Ri), Output Resistance (Ro) and Current amplification
Factor (β) of the given transistor.
APPARATUS:

S.No Name of the Apparatus Range Quantity

1 Transistor (BC-107) 1
2 Resistors 1KΩ, 470Ω 1
3 Regulated Power Supply (0-30)V DC 1
4 Bread Board 1
5 Digital Ammeters (0-200)μA/(0-200)mA 2
6 Digital Voltmeters (0-20)V DC 2
7 Connecting Wires As Required

THEORY:
A transistor is a three terminal device. The terminals are emitter, base, collector. In
common emitter configuration, input voltage is applied between base and emitter terminals and
out put is taken across the collector and emitter terminals. Therefore the emitter terminal is
common to both input and output.
The input characteristics resemble that of a forward biased diode curve. This is
expected since the Base-Emitter junction of the transistor is forward biased. As compared to CB
arrangement IB increases less rapidly with VBE. Therefore input resistance of CE circuit is higher
than that of CB circuit.
The output characteristics are drawn between Ic and VCE at constant IB. the collector
current varies with VCE unto few volts only. After this the collector current becomes almost
constant, and independent of VCE. The value of VCE up to which the collector current changes
with V CE is known as Knee voltage. The transistor always operated in the region above Knee
voltage, IC is always constant and is approximately equal to I B. The current amplification factor
of CE configuration is given by β = ΔIC/ΔIB
CIRCUIT DIAGRAM:

MODEL GRAPH:
(i) INPUT CHARACTERISTICS: OUTPUT CHARACTERISTICS:
PROCEDURE:

(i) INPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram.
2. For plotting the input characteristics the output voltage V CE is kept constant at 1V and
for different values of VBE, note down the values of IB.
3. Repeat the above step by keeping VCE at 2V and 3V.
4. Tabulate all the readings.
5. Plot the graph between VBE on x-axis and IB on y-axis for constant VCE.

(ii) OUTPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram.
2. For plotting the output characteristics the input current IB is kept constant at 50μA and for
different values of VCE, note down the values of IC.
3. Repeat the above step by keeping IB at 75μA and 100μA.
4. Tabulate the all the readings.
5. Plot the graph between VCE on x-axis and IC on y-axis for constant IB.

PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the transistor. This may lead
to damage the transistor.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.

4. Make sure while selecting the emitter, base and collector terminals of the transistor

CALCULATIONS:
1. Input resistance: To obtain input resistance find ΔVBE and ΔIB at constant VCE on one
of the input characteristics. Then
Ri = ΔVBE / ΔIB (VCE constant)
2. Output resistance: To obtain output resistance, find ΔIC and ΔVCE at constant IB.
Ro = ΔVCE / ΔIC (IB constant)
3. The current amplification factor of CE configuration is given by
β = ΔIC/ΔIB
OBSERVATIONS:

(i) INPUT CHARACTERISTICS:

VCE = 1V VCE = 2V VCE = 3V

S.No
VBE (V) IB (μA) VBE (V) IB (μA) VBE (V) IB (μA)

(ii) OUTPUT CHARACTERISTICS:

IB = 50 μA IB = 75 μA IB = 100 μA
S.No
VCE (V) IC (mA) VCE (V) IC( mA) VCE(V) IC (mA)
RESULT: The input and output characteristics of a transistor in CE configuration are drawn.
The Input (Ri) and Output resistances (Ro) and  of a given transistor are calculated.
1. The Input resistance (Ri) of a given Transistor is
2. The Output resistance (Ro) of a given Transistor is
3. The Current amplification factor is

VIVA QUESTIONS:
1. What is the range of  for the transistor?
2. What are the input and output impedances of CE configuration?
3. Identify various regions in the output characteristics?
4. What is the relation between  and  ?
5. Define current gain in CE configuration?
6. What is the phase relation between input and output?
7. Draw diagram of CE configuration for PNP transistor?
8. What is the power gain of CE configuration?
9. What are the applications of CE configuration?
EXPERIMENT 5.
INPUT AND OUTPUT CHARACTERISTICS OF FE IN CS
CONFIGURATION)
AIM: 1. To draw the Drain and Transfer characteristics of a given FET in CS
Configuration.
2. To find the drain resistance (rd), amplification factor (μ) and Trans-Conductance
(gm) of the given FET.
APPARATUS:

S.No Name of the Apparatus Range Quantity

1 FET (BFW-11) 1
2 Resistors 100KΩ, 100Ω 1
3 Regulated Power Supply (0-30)V DC 1
4 Bread Board 1
5 Digital Ammeter (0-200)mA 1
6 Digital Voltmeter (0-20)V DC 2
7 Connecting Wires As Required

THEORY:
A FET is a three terminal device, having the characteristics of high input impedance and
less noise, the Gate to Source junction of the FET s always reverse biased. In response to small
applied voltage from drain to source, the n-type bar acts as sample resistor, and the drain current
increases linearly with VDS. With increase in ID the ohmic voltage drop between the source and
the channel region reverse biases the junction and the conducting position of the channel begins
to remain constant. The VDS at this instant is called “pinch of voltage”.
If the gate to source voltage (VGS) is applied in the direction to provide additional
reverse bias, the pinch off voltage ill is decreased. In amplifier application, the FET is always
used in the region beyond the pinch-off.
IDS=IDSS (1-VGS/VP)2
CIRCUIT DIAGRAM:

MODEL GRAPH:
(i) DRAIN CHARACTERISTICS: TRANSFER CHARACTERISTICS:
PROCEDURE:
1. All the connections are made as per the circuit diagram.
2. To plot the drain characteristics, keep VGS constant at 0V.
3. Vary the VDD and observe the values of VDS and ID.
4. Repeat the above steps 2, 3 for different values of V GS at -1V and -2V.
5. All the readings are tabulated.
6. To plot the transfer characteristics, keep VDS constant at 0.5V.
7. Vary VGG and observe the values of VGS and ID.
8. Repeat steps 6 and 7 for different values of VDS at 1V and 1.5V.
9. The readings are tabulated.
10. From drain characteristics, calculate the values of drain resistance (r d) by using the formula
rd = ∆VDS/∆ID
11. From transfer characteristics, calculate the value of trans-conductance (gm) by using the
formula
gm = ∆ID/∆VGS
12. Amplification factor (μ) = drain resistance (rd) x Trans-conductance (gm)
μ = ∆VDS/∆VGS

PRECAUTIONS:

1. While doing the experiment do not exceed the ratings of the FET. This may lead to
damage the FET.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
4. Make sure while selecting the Source, Drain and Gate terminals of the FET.
OBSERVATIONS:

(i) DRAIN CHARACTERISTICS:

S.No VGS = 0V VGS = -1V VGS = -2V

VDS (V) ID (mA) VDS (V) ID (mA) VDS (V) ID (mA)

(ii) TRANSFER CHARACTERISTICS:

S.No VDS =0.5V VDS=1V VDS =1.5V

VGS (V) ID (mA) VGS (V) ID (mA) VGS (V) ID (mA)

RESULT:
1. The drain and transfer characteristics of a given FET are drawn.
2. The drain resistance (rd), amplification factor (μ) and Trans-conductance (gm) of the
given FET are calculated.
(i) The drain resistance (rd) of FET is _
(ii) Trans-conductance (g m) of FET is
(iii) Amplification factor (μ) of FET is

VIVA QUESTIONS:
1. What are the advantages of FET?
2. Different between FET and BJT?
3. Explain different regions of V-I characteristics of FET?
4. What are the applications of FET?
5. What are the types of FET?
6. Draw the symbol of FET.
7. What are the disadvantages of FET?
8. What are the parameters of FET?
EXPERIMENT 6
COMMON EMITTER AMPLIFIER CHARACTERISTICS
AIM: 1. To obtain the frequency response of the Common Emitter BJT Amplifier.
2. To Measure the Voltage gain and Bandwidth of CE amplifier.
APPARATUS:
S

S.No Name of the Apparatus Range Quantity

1 Transistor (BC-107) 1
2 Resistors 1KΩ, 4.7KΩ, 10KΩ, 1
15 KΩ , 68 KΩ
3 Capacitors 10µF 2
47 µF 1
4 Bread Board 1
5 Regulated Power Supply (0-30)V DC 1
6 Function Generator (100-1M)Hz 1
7 CRO (100-20M)Hz 1
7 Connecting Wires As Required

THEORY:

The CE amplifier provides high gain &wide frequency response. The emitter lead is
common to both input & output circuits and is grounded. The emitter-base circuit is forward
biased. The collector current is controlled by the base current rather than emitter current. The
input signal is applied to base terminal of the transistor and amplifier output is taken across
collector terminal. A very small change in base current produces a much larger change in
collector current. When +ve half-cycle is fed to the input circuit, it opposes the forward bias of
the circuit which causes the collector current to decrease, it decreases the voltage more –ve. Thus
when input cycle varies through a -ve half-cycle, increases the forward bias of the circuit, which
causes the collector current to increases thus the output signal is common emitter amplifier is in
out of phase with the input signal.
CIRCUIT DIAGRAM:

FREQUENCY RESPONSE:
PROCEDURE:

1. Connect the circuit as per the circuit diagram.

2. Set Source Voltage Vs = 50mV (say) at 1 KHz frequency, using function generator.
3. Keeping the input voltage constant, vary the frequency from 50Hz to 1MHz in regular
steps and note down the corresponding output voltage.
4. Calculate the Voltage Gain by using the formula
Av = Output voltage (V0) / Input voltage (Vs)
5. Calculate the Voltage Gain in dB by using Voltage Gain Av (dB) = 20 log10 (Vo/Vs).
6. Plot the Graph by taking Voltage gain (dB) on x-axis and frequency (Hz) on y-axis.
7. The Bandwidth of the amplifier is calculated from the graph using the expression,
Bandwidth, BW=f2-f1
Where f1 is lower 3-dB frequency
f2 is upper 3-dB frequency

PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the transistor. This may lead
to damage the transistor.
2. Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.
3. Make sure while selecting the emitter, base and collector terminals of the transistor.
OBSERVATIONS:
Vs = V
Input Output
Voltage Voltage Gain (dB)
S.No Frequency Voltage (Vo)
Gain=Vo/Vs =20 log10 (Vo/Vs)
(Hz) (volts)
RESULT: The Voltage gain and Bandwidth of CE amplifier is measured and the
frequency response of the CE Amplifier is obtained.
1. The Voltage gain of CE Amplifier is .
2. The Bandwidth of CE Amplifier is .

VIVA QUESTIONS:
1. What is phase difference between input and output waveforms of CE amplifier?
2. What type of biasing is used in the given circuit?
3. If the given transistor is replaced by a p-n-p, can we get output or not?
4. What is effect of emitter-bypass capacitor on frequency response?
5. What is the effect of coupling capacitor?
6. What is region of the transistor so that it is operated as an amplifier?
7. How does transistor acts as an amplifier?
8. Draw the h-parameter model of CE amplifier?
9. What type of transistor configuration is used in intermediate stages of a multistage
amplifier?
EXPERIMENT 7
COMMON BASE AMPLIFIER CHARACTERISTICS

AIM: 1. To obtain the frequency response of the Common base BJT Amplifier.
2. To Measure the Voltage gain and Bandwidth of CB amplifier.
APPARATUS:

S.No Name of the Apparatus Range Quantity

1 BJT transistor(BC 107) 1

2 Resistors 1k   3

3 Capacitors 10F 2

4 Regulated power supply 0-30V 1

5 Function generator 1MHZ 1
6 CRO 20MHZ 1
7 Bread Board 1
8 Connecting wires As
required

THEORY:
In Common Base Amplifier Circuit Base terminal is common to both the input and output
terminals. In this Circuit input is applied between emitter and base and the output is taken
from collector and the base. As we know, the emitter current is greater than any other current
in the transistor, being the sum of base and collector currents i.e. IE= IB+ IC In the CE and
CC amplifier configurations, the signal source was connected to the base lead of the
transistor, thus handling the least current possible. Because the input current exceeds all other
currents in the circuit, including the output current, the current gain of this amplifier is
actually less than 1 (notice how Rload is connected to the collector, thus carrying slightly
less current than the signal source). In other words, it attenuates current rather than
amplifying it. With common-emitter and common-collector amplifier configurations, the
transistor parameter most closely associated with gain was β. In the common-base circuit, we
follow another basic transistor parameter: the ratio between collector current and emitter
current, which is a fraction always less than 1. This fractional value for any transistor is called
the alpha ratio, or α ratio.( α= IC/IE) Since it obviously can't boost signal current, it only
seems reasonable to expect it to boost signal voltage.
CIRCUIT DIAGRAM:

FREQUENCY RESPONSE PLOT:

PROCEDURE:
1. Connect the circuit as per the circuit diagram.
2. Set Source Voltage Vs = 50mV (say) at 1 KHz frequency, using function generator.
3. Keeping the input voltage constant, vary the frequency from 50Hz to 1MHz in regular
steps and note down the corresponding output voltage.
4. Calculate the Voltage Gain by using the formula
Av = Output voltage (V0) / Input voltage (Vs)
5. Calculate the Voltage Gain in dB by using Voltage Gain A v (dB) = 20 log10 (Vo/Vs).
6. Plot the Graph by taking Voltage gain (dB) on x-axis and frequency (Hz) on y-axis.
7. The Bandwidth of the amplifier is calculated from the graph using the expression,
Bandwidth, BW=f2-f1
Where f1 is lower 3-dB frequency
f2 is upper 3-dB frequency

PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the transistor. This may lead to
damage the transistor.
2. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
3. Make sure while selecting the emitter, base and collector terminals of the transistor.
OBSERVATIONS:

VS=---------V
Input Output
Voltage Voltage Gain (dB)
S.No Frequency Voltage (Vo)
Gain=Vo/Vs =20 log10 (Vo/Vs)
(Hz) (volts)
RESULT:

The Voltage gain and Bandwidth of CBamplifier is measured and the frequency response
of the CB Amplifier is obtained.
1. The Voltage gain of CB Amplifier is .
2. The Bandwidth of CB Amplifier is

VIVA QUESTIONS:

1. What is phase difference between input and output waveforms of CB amplifier?

2. What type of biasing is used in the given circuit?
3. If the given transistor is replaced by a p-n-p, can we get output or not?
4. What is the effect of coupling capacitor?
5. What is region of the transistor so that it is operated as an amplifier?
6. How does transistor acts as an amplifier?
7. Draw the h-parameter model of CB amplifier?
8. What type of transistor configuration is used in intermediate stages of a multistage
amplifier?
EXPERIMENT 8
COMMON SOURCE AMPLIFIER CHARACTERISTICS

AIM: 1. To obtain the frequency response of the Common Source FET Amplifier.
2. To Measure the Voltage gain and Bandwidth of CS Amplifier.
APPARATUS:

S.No Name of the Apparatus Range Quantity

1 JFET (BFW-10) 1
2 Resistors 1KΩ, 3.3KΩ, 100KΩ 1
3 Capacitors 10µF 3
4 Bread Board 1
5 Regulated Power Supply (0-30)V DC 1
6 Function Generator (100-1M)Hz 1
7 CRO (100-20M)Hz 1
7 Connecting Wires As Required

THEORY:
A field-effect transistor (FET) is a type of transistor commonly used for weak-signal
amplification (for example, for amplifying wireless (signals). The device can amplify analog or
digital signals. It can also switch DC or function as an oscillator. In the FET, current flows along
a semiconductor path called the channel. At one end of the channel, there is an electrode called
the source. At the other end of the channel, there is an electrode called the drain. The physical
diameter of the channel is fixed, but its effective electrical diameter can be varied by the
application of a voltage to a control electrode called the gate. Field-effect transistors exist in two
major classifications. These are known as the junction FET (JFET) and the metal-oxide-
semiconductor FET (MOSFET). The junction FET has a channel consisting of N-type
semiconductor (N-channel) or P-type semiconductor (P-channel) material; the gate is made of
the opposite semiconductor type. In P-type material, electric charges are carried mainly in the
form of electron deficiencies called holes. In N-type material, the charge carriers are primarily
electrons. In a JFET, the junction is the boundary between the channel and the gate. Normally,
this P-N junction is reverse-biased (a DC voltage is applied to it) so that no current flows between
the channel and the gate. However, under some conditions there is a small current through the
junction during part of the input signal cycle.
CIRCUIT DIAGRAM:

FREQUENCY RESPONSE:
PROCEDURE:

1. Connect the circuit as per the circuit diagram.

2. Set Source Voltage Vs = 50mV (say) at 1 KHz frequency, using function generator.
3. Keeping the input voltage constant, vary the frequency from 50Hz to 1MHz in regular
steps and note down the corresponding output voltage.
4. Calculate the Voltage Gain by using the formula
Av = Output voltage (V0) / Input voltage (Vs)
5. Calculate the Voltage Gain in dB by using Voltage Gain A v (dB) = 20 log10 (Vo/Vs).
6. Plot the Graph by taking Voltage gain (dB) on x-axis and frequency (Hz) on y-axis.
7. The Bandwidth of the amplifier is calculated from the graph using the expression,
Bandwidth, BW=f2-f1
Where f1 is lower 3-dB frequency
f2 is upper 3-dB frequency

PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the FET. This may lead to
damage the FET.
2. Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.
3. Make sure while selecting the source, gate and drain terminals of the FET.
OBSERVATIONS:
Vs = V
Input Output
Voltage Voltage Gain (dB)
S.No Frequency Voltage (Vo)
Gain=Vo/Vs =20 log10 (Vo/Vs)
(Hz) (volts)
RESULT:
The Voltage gain and Bandwidth of CS amplifier is measured and the frequency response curve
of the CS Amplifier is obtained.
1. The Voltage gain of CS Amplifier is .
2. The Bandwidth of CS Amplifier is .

VIVA QUESTIONS:
1. What are the advantages of FET amplifier over conventional transistor amplifiers?
2. Why the Voltage gain of a FET is less than a BJT?
3. Why FET is used as a buffer amplifier?
4. Why Input impedance of MOSFET is much higher than a FET?
5. Why A MOSFET can be operated with positive or negative gate voltage?
EXPERIMENT 9
MEASUREMENT OF H-PARAMETERS OF
TRANSISTOR IN CB, CE, CC CONFIGURATIONS

AIM: To calculate the h-parameters of the transistor in CE configuration

APPARATUS:

S.No Name of the Apparatus Range Quantity

1 Transistor BC107 1
2 Resistors 100 KΏ 100Ώ 1
3 Ammeter (0-200µA) 1
4 Ammeter (0-200mA) 1
5 Voltmeter (0-20V) 1
6 Regulated Power Supply (0-30V) 1
7 Bread board 1

THEORY:
A) INPUT CHARACTERISTICS:

The two sets of characteristics are necessary to describe the behaviour of the CE
configuration, in which one for input or base emitter circuit and other for the output or
collector emitter circuit. In input characteristics the emitter base junction forward biased
by a very small voltage VBB where as collector base junction reverse biased by a very large
voltage VCC. The input characteristics are a plot of input current IB Versuss the input
voltage VBE for a range of values of output voltage V CE . The following important points
can be observed from these characteristics curves.

1. Input resistance is high as IB increases less rapidly with VBE

2. The input resistance of the transistor is the ratio of change in base emitter voltage ΔV BE
to change in base current ΔIB at constant collector emitter voltage (VCE) i.e... Input
resistance or input impedance hie = ΔVBE / ΔIB at VCE constant.
B) OUTPUT CHARACTERISTICS:
A set of output characteristics or collector characteristics are a plot of output current IC
VS output voltage VCE for a range of values of input current IB .The following important
points can be observed from these characteristics curves.
1. The transistor always operates in the active region. i.e. the collector current IC
increases with VCE very slowly. For low values of the VCE the IC increases rapidly with
a small increase in VCE .The transistor is said to be working in saturation region.
2. Output resistance is the ratio of change of collector emitter voltage ΔV CE , to change
in collector current ΔIC with constant IB.
Input Impedance hie = ΔVBE / ΔIB atVCEconstant

Output impedance hoe = ΔVCE / ΔIC at IB const

Reverse Transfer Voltage Gain hre = ΔVBE / ΔVCE at IB constant

Forward Transfer Current Gain hfe = ΔIC / ΔIB at constant VCE

CIRCUIT DIAGRAM:
PROCEDURE:
1. Connect a transistor in CE configuration circuit for plotting its input and output
characteristics.
2. Take a set of readings for the variations in IB with VBE at different fixed values of
output voltage VCE .
3. Plot the input characteristics of CE configuration from the above readings.
4. From the graph calculate the input resistance hie and reverse transfer ratio hre by
taking the slopes of the curves.
5. Take the family of readings for the variations of IC with VCE at different values of
fixed IB.
6. Plot the output Characteristics from the above readings.
7. From the graphs calculate hfe and hoe by taking the slope of the curves.

PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the transistor. This may lead to
damage the transistor.
2. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
3. Make sure while selecting the emitter, base and collector terminals of the transistor.
MODEL GRAPH:
A) INPUT CHARACTERSITICS:
i) calculation of hie

ii) calculation of hre

OUPUT CHARACTERISITCS:

i)calculation of hfe

ii) calculation of hoe

OBSERVATIONS:

A) Input Characteristics

VCE=0V VCE=6V
S.NO
VBE(V) IB(μA) VBE(V) IB(μA)

B) Output Characteristics:

IB = 20 µA IB = 40 µA IB = 60 µA
S.NO VCE VCE VCE
IC(mA) IC(mA) IC(mA)
(V) (V) (V)
RESULT:
The CE h-parameters calculated are: hie= hre=
hfe= hoe=

VIVA QUESTIONS:

1. What are the h-parameters?

2. What are the limitations of h-parameters?
3. What are its applications?
4. Draw the equivalent circuit diagram of h- parameters?
5. Define h- parameter?
6. What is the general formula for input impedance?
7. What is the general formula for Current Gain?
8. What is the general formula for Voltage gain?
EXPERIMENT 10
SWITCHING CHARACTERISTICS OF A
TRANSISTOR

AIM: To obtain characteristics of a transistor as a switch

APPARATUS:

S.No Name of the Apparatus Range Quantity

1 Transistor(BC107) 1
2 Diode(IN4007) 1
3 10 KΩ 2
Resistors
5.6KΩ 2
4 Capacitor 100pF 1
5 CRO 20MHz 1
6 Function generator 1MHz 1
7 Regulated Power Supply 0-30V, 1A 1

THEORY:
Transistors are widely used in digital logic circuits and switching
applications. In these applications the voltage levels periodically alternate
between a “LOW” and a “HIGH” voltage, such as 0V and +5V. In switching
circuits, a transistor is operated at cutoff for the OFF condition, and in
saturation for the ON condition. The active linear region is passed through
abruptly switching from cutoff to saturation or vice versa. In cutoff region,
both the transistor junctions between Emitter and Base and the junction
between Base and Collector are reverse biased and only the reverse current
which is very small and practically neglected, flows in the transistor. In
saturation region both junctions are in forward bias and the values of V ce(sat)
and V be(sat) are small.
CIRCUIT DIAGRAM:

MODEL GRAPH:

THEORETICAL CALICULATIONS:
When Vi= +2.5v, the transistor goes into
saturation region. So V O=Vce sat= 0.3V.

When V i=-2.5v, the transistor is in cutoff region so V o=Vcc=5v

PROCEDURE:

1. Connect the circuit as per circuit diagram.

2. Obtain a constant amplitude square wave from function generator of 5V

p-p and give the signal as input to the circuit.
3. Observe the output waveform and note down its voltage
amplitude levels.
4. 4.Draw the input and output waveforms
PRECAUTIONS:

1. Connections should be made carefully.

2. Verify the circuit before giving supply voltage.

3. Take readings without any parallax error.

RESULT:

Switching characteristics of a transistor are observed.

VIVA QUESTIONS:

1. What are the limitations of transistor switch?

2. What is the turn on time of a transistor?
EXPERIMENT 11
SCR CHARACTERISTICS
AIM: 1. To draw the V-I characteristics of SCR.
2. To find the Break-over voltage (VBO) and Holding current (IH) of SCR.

APPARATUS:

S.No Name of the Apparatus Range Quantity

1 SCR (TYN616) 1
2 Resistors 1KΩ, 10KΩ 1
3 Regulated Power Supply (0-30)V DC 1
4 Bread Board 1
5 Digital Ammeter (0-200)mA,(0-200)µA 2
6 Digital Voltmeter (0-20)V DC 1
7 Connecting Wires As Required

THEORY:
It is a four layer semiconductor device being alternate of P-type and N-type silicon. It
consists of 3 junctions J1, J2, J3 the J1 and J3 operate in forward direction and J2 operates in reverse
direction and three terminals called anode A, cathode K, and a gate G. The operation of SCR can
be studied when the gate is open and when the gate is positive with respect to cathode. When
gate is open, no voltage is applied at the gate due to reverse bias of the junction J 2 no current
flows through R2 and hence SCR is at cut off. When anode voltage is increased J 2 tends to
breakdown.

Fig.: Symbol of SCR

When the gate positive, with respect to cathode J3 junction is forward biased and J2 is
reverse biased .Electrons from N-type material move across junction J3 towards gate while holes
from P-type material moves across junction J 3 towards cathode. So gate current starts flowing,
anode current increase is in extremely small current junction J2 break down and SCR conducts
heavily. When gate is open the break over voltage is determined on the minimum forward voltage
at which SCR conducts heavily. Now most of the supply voltage appears across the load
resistance. The holding current is the maximum anode current gate being open, when break over
occurs.
CIRCUIT DIAGRAM:

MODEL GRAPH:
PROCEDURE:
1. All the connections are made as per the circuit diagram.
2. Keep the gate current (IG) open i.e. IG = 0 mA.
3. Vary the anode to cathode supply voltage and note down the readings of Voltage VAK (V),
and Current IAK (µA).
4. Now Keep the gate current (IG) at a standard value of 10 mA i.e. IG = 10 mA.
5. Again vary the anode to cathode supply voltage and note down the corresponding readings
of Voltage V AK (V), and Current IAK (mA).
6. Plot the graph by taking V AK (V) on x-axis and Current IAK (mA) on y-axis.
7. Measure the Break-over voltage (VBO) and Holding current (IH) of SCR from the graph.

PRECAUTIONS:

1. While doing the experiment do not exceed the ratings of the SCR. This may lead to
damage the SCR.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
4. Make sure while selecting the Anode, Cathode and Gate terminals of the SCR.
OBSERVATIONS:

IG = 0 mA IG = 10 mA
S.No VAK (V) IAK (µA) VAK (V) IAK (mA)
RESULT: The V-I characteristics of SCR are drawn and the Break-over voltage (VBO),
Holding current (IH) of SCR are found.
1. The Break-over voltage (VBO) of SCR is .
2. The Holding current (IH) of SCR is .

VIVA QUESTIONS:
1. What the symbol of SCR?
2. In which state SCR turns of conducting state to blocking state?
3. What are the applications of SCR?
4. What is holding current?
5. What are the important type’s thyristors?
6. How many numbers of junctions are involved in SCR?
7. What is the function of gate in SCR?
8. When gate is open, what happens when anode voltage is increased?
9. What is the value of forward resistance offered by SCR?
10. What is the condition for making from conducting state to non conducting state?
EXPERIMENT 12
TYPES OF CLIPPERS AT DIFFERENT REFERENCE VOLTAGES

AIM: To obtain the output and transfer characteristics of various diode clipper circuits

APPARATUS:
S.No Name of the Apparatus Range Quantity
1 Resistors 1KΩ 1
2 Diode(1N4007) 1
3 CRO 20MHz 1
4 Function generator 1MHz 1
5 DC Regulated power supply 1
0-30V,1A

THEORY:
The basic action of a clipper circuit is to remove certain portions of the
waveform, above or below certain levels as per the requirements. Thus the
circuits which are used to clip off unwanted portion of the waveform, without
distorting the remaining part of the waveform are called clipper circuits or
Clippers. The half wave rectifier is the best and simplest type of clipper circuit
which clips off the positive/negative portion of the input signal. The clipper
circuits are also called limiters or slicers.
CIRCUIT DIAGRAM:

A) POSITIVE PEAK CLIPPER WITH REFERENCE VOLTAGE, V=2V

B) POSITIVE BASE CLIPPER WITH REFERENCE VOLTAGE, V=2V

PROCEDURE:
1. Connect the circuit as per circuit diagram shown in Fig.1

Obtain a sine wave of constant amplitude 8 V p-p from function generator and
apply as input to the circuit.
2. Observe the output waveform and note down the amplitude at which
clipping occurs.
3. Draw the observed output waveforms.

4. To obtain the transfer characteristics apply dc voltage at input terminals and

vary the voltage insteps of 1V up to the voltage level more than the reference
voltage and note down the corresponding voltages at the output.
5. Plot the transfer characteristics between output and input voltages.

6. Repeat the steps 1 to 5 for all other circuits.

PRECAUTIONS:

1. Connections should be made carefully.

2. Verify the circuit before giving supply.

3. Take readings without any parallax error.

C) NEGATIVE BASE CLIPPER WITH REFERENCE VOLTAGE,V=-2V

D) NEGATIVE PEAK CLIPPER WITH REFERENCE VOLTAGE, V=-2V

E) SLICER CIRCUIT:

SAMPLE READINGS:
A)Positive peak clipper: Reference voltage, V=2v

S.No I/p voltage O/p voltage

(v) (v)
1 -6 -6
2 -5 -5
3 -4 -4
4 -3 -3
5 -2 -2
6 -1 -1
7 0 0
8 1 1
9 2 2
10 3 2.6
11 4 2.6
12 5 2.6
13 6 2.6

B) Positive base clipper: Reference voltage V= 2v

S.No I/p voltage(v) O/p voltage(v)
1 -6 1.6
2 -5 1.6
3 -4 1.6
4 -3 1.6
5 -2 1.6
6 -1 1.6
7 0 0
8 1 1.6
9 2 2
10 3 3
11 4 4
12 5 5
13 6 6
C) Negative base clipper: Reference voltage V=2v

S.No I/P voltage(v) O/Pvoltage(v)

1 -6 -6
2 -5 -5
3 -4 -4
4 -3 -3
5 -2 -1.6
6 -1 -1.6
7 0 -1.6
8 1 -1.6
9 2 -1.6
10 3 -1.6
11 4 -1.6
12 5 -1.6

13 6 -1.6

D) Negative peak clipper: Reference voltage V= 2v

S.No I/P voltage(v) O/P voltage(v)

1 -6 -2.6
2 -5 -2.6
3 -4 -2.6
4 -3 -2.6
5 -2 -2
6 -1 -1
7 0 0
8 1 1
9 2 2
10 3 3
11 4 4
12 5 5

13 6 6
E) SLICER CIRCUIT:

S.No I/p voltage(v) O/p voltage(v)

1 -6 -2.6
2 -5 -2.6
3 -4 -2.6
4 -3 -2.6
5 -2 -2
6 -1 -1
7 0 0
8 1 1
9 2 2
10 3 2.6
11 4 2.6
12 5 2.6
13 6 2.6

THEORETICAL CALCULATIONS:

Positive peak clipper:

Vr=2v, Vγ=0.6v
When the diode is forward biased V o =Vr+ Vγ =2.6v
When the diode is reverse biased the V o=Vi
Positive base clipper:
Vr=2v, Vγ=0.6v
When the diode is forward biased Vo=Vr –Vγ =1.4v
When the diode is reverse biased V o=V i .
Negative base clipper:
V r=2v, Vγ=0.6v
When the diode is forward biased Vo = -Vr+ Vγ = -1.4v
When the diode is reverse biased V o=V i .
Negative peak clipper:
V r=2v, Vγ=0.6v
When the diode is forward biased V o= -(Vr+ Vγ) =-2.6v
When the diode is reverse biased V o=V i .

Slicer:
When the diode D1 is forward biased and D2 is reverse biased V o= V r+ Vγ=2.6v
When the diode D2 is forward biased and D2 is reverse biased V o=-(Vr+ Vγ)=-2.6v

When the diodes D1 &D2 are reverse biased V o=Vi .

MODEL GRAPH:

Positive peak clipper: Reference voltage V=2v

Positive base clipper: Reference voltage V=2v

Negative base clipper: Reference voltage V=2v

Negative peak clipper: Reference voltage V=2v

SLICER CIRCUIT:
RESULT:

Performance of different clipping circuits is observed and their transfer

characteristics are obtained.

VIVA QUESTIONS:
1. In the fig.1 if reference voltage is 0v then what will be the output?
2. What are the other names for the clippers?
EXPERIMENT 13
TYPES OF CLAMPERS AT DIFFERENT REFERENCE VOLTAGES

AIM:
To verify the output of different diode clamping circuits

APPARATUS:
S.No Name of the Apparatus Range Quantity
1 Resistors 10K 1
Ω
2 Capacitor 100uF, 1
100pF
3 Diode 1N4007 1
4 CRO 20MHz 1
5 Function generator 1MHz 1

THEORY:
The circuits which are used to add a d.c level as per the requirement to the
a.c signals are called clamper circuits. Capacitor, diode, resistor are the three
basic elements of a clamper circuit. The clamper circuits are also called d.c
restorer or d.c inserter circuits. The clampers are classified as
1. Negative clampers
2. Positive clampers
CIRCUIT DIAGRAM:
A) POSITIVE PEAK CLAMPING TO 0V :

B) POSITIVE PEAK CLAMPING TO V R=2V

C) NEGATIVE PEAK CLAMPING TO V R=0V

PROCEDURE:

1. Connect the circuit as per circuit diagram.

2. Obtain a constant amplitude sine wave from function generator of 6 Vp-p,

frequency of 1KHz and give the signal as input to the circuit.
3. Observe and draw the output waveform and note down the amplitude at
which clamping occurs.
4. Repeat the steps 1 to 3 for all circuits.

PRECAUTIONS:

1. Connections should be made carefully.

2. Verify the circuit before giving supply.

3. Take readings without any parallax error.

D) NEGATIVE PEAK CLAMPING TO V R= -2V

MODEL GRAPH:
POSITIVE PEAK CLAMPING TO 0V:
POSITIVE PEAK CLAMPING TO V R=2V

NEGATIVE PEAK CLAMPING TO 0V

NEGATIVE PEAK CLAMPING TO VR= -2V

RESULT:

Different clamping circuits are constructed and their performance is observed.

VIVA QUESTIONS:

1. What is a clamper?

2. Give some practical applications of clamper

3. What is the purpose of shunt resistance in clamper?

EXPERIMENT 14
THE STEADY STATE OUTPUT WAVEFORM OF CLAMPERS
FOR A SQUARE WAVE INPUT

AIM:
To verify the steady state output waveform of clampers for a square wave input
APPARATUS:

S.No Name of the Apparatus Range Quantity

1 Resistors 10KΩ 1
2 Capacitor 100uF, 1
100pF
3 Diode 1N4007 1
4 CRO 20MHz 1
5 Function generator 1MHz 1

THEORY:

The circuits which are used to add a d.c level as per the requirement to
the a.c signals are called clamper circuits. Capacitor, diode, resistor are the
three basic elements of a clamper circuit. The clamper circuits are also called
d.c restorer or d.c inserter circuits. The clampers are classified as
1. Negative clampers
2. Positive clampers
CIRCUIT DIAGRAM:
A) POSITIVE CLAMPER :

A) NEGATIVE PEAK CLAMPING TO V R=0V

PROCEDURE:

1. Connect the circuit as per circuit diagram.

2. Obtain a constant amplitude sine wave from function generator of 6 Vp-p,

frequency of 1KHz and give the signal as input to the circuit.
3. Observe and draw the output waveform and note down the
amplitude at which clamping occurs.
4. Repeat the steps 1 to 3 for all circuits.

PRECAUTIONS:

1. Connections should be made carefully.

2. Verify the circuit before giving supply.

3. Take readings without any parallax error.

MODEL GRAPH
A) POSITIVE CLAMPER: B) NEGETIVE CLAMPERS:

]
RESULT:
the steady state output waveform of clampers for a square wave input are verified

VIVA QUESTIONS:

1. What is a clamper?

2. Give some practical applications of clamper

3. What is the purpose of shunt resistance in clamper?