1. Assertion (A): A demultiplexer can be used as a decode r.

Reason (R): A demultiplexer can be built by using AND gates only.

A. Both A and R are correct and R is correct explanatio n of A

B. Both A and R are correct but R is not correct explanation of A

C. A is true, R is false

D. A is false, R is true

2. The number of unused states in a 4 bit Johnson counter is

A. 2

B. 4

C. 8

D. 12

3. A universal shift register can shift

A. fro m left to right

B. fro m right to left

C. both fro m left to right and right to left

D. none of the above

4. In the given figure, A = B = 1 and C = D = 0. Then Y =

A. 1

B. 0

C. either 1 or 0

D. indeterminate
5. Assertion (A): CMOS devices have very high speed.
Reason (R): CMOS devices have very small physical size and simple geo metry.
A. Both A and R are correct and R is correct explanatio n of A

B. Both A and R are correct but R is not correct explanation of A

C. A is true, R is false

D. A is false, R is true

6. Calculate the output voltage for this circuit when V1 = 2.5 V and V2 = 2.25 V.

A. –5.25 V

B. 2.5 V

C. 2.25 V

D. 5.25 V

7. Refer to this figure. The value o f VBC is:

A. 9.2 V

B. 9.9 V

C. –9.9 V

D. –9.2 V

8. A rectangular waveguide, in do minant TE mode, has dimensions 10 cm x 15 cm. The

cut off frequency is
A. 10 GHz

B. 1 GHz

C. 15 GHz

D. 25 GHz

9. The fo llowing circuit can be represented as :

A. C

B. f(A, B, (0, 1, 2, 3, 4, 5, 6, 7)

C. C) = (A

D. B)C

10. The star equivalent C1 C2 , C3 of the delta network is respectively

A.

B.

C.

D.

11. In amplitude modulation, carrier signals A cos ωt has its amplitude A modulated in
proportion with message bearing (low frequency) signal m(t). The magnitude of m(t)
is
chosen to be .
A. less than 1

B. less than or equal to 1

C. more than 1
D. none of these

12. An 8 level encoding scheme is used in a PCM system of 10 kHz channel BW.
The channel capacity is
A. 80 kbps

B. 60 kbps

C. 30 kbps

D. 18 kbps

13. For static electric and magnetic fie lds in an homogenous source- free medium, which
of the fo llowing represents the correct form of Maxwell's equations?
A. Δ.E = 0
ΔxB=0

B. Δ.E = 0
Δ.B = 0
C. Δ x E = 0
ΔxB=0

D. Δ x E = 0
Δ.B = 0

14. A material has conductivity o f 105 mho/m and permeability o f 4 x 10-7 H/m. The
skin depth at 9 GHz is
A. 1.678 μm

B. 26 μm

C. 17 μm
D. 32.32 μm

15. A fair co in is tossed independently four times. The probability o f the event "the
number of time heads shown up is more than the number of times tails shown up" is
A.

B.

C.

D.

16. Find Y- parameters

A.

B.

C.

D. None of these
17. For a second-order system with the closed- loop transfer function
The settling time for 2-percent band, in seconds, is :
A. 1.5

B. 2.0

C. 3.0

D. 4.0

18. An open loop transfer function is given by has

A. one zero at ∞

B. two zeros at ∞

C. three zeros at ∞

D. four zeros at ∞

19. If the memory chip size is 256 x 1 bits, then the number of chips required to make up
1 kB (1024) bytes of memory is

A. 32

B. 24

C. 12

D. 8

20. What about the stability o f system in

A. system is stable

B. unstable

C. stable at 0.4

D. cant say

21. Which one is a causal system?

A. y(n) = 3x[n] - 2x[n - 1]

B. y(n) = 3x[n] + 2x[n + 1]

C. y(n) = 3x[n + 1] + 2x[n - 1]

D. y(n) = 3x[n + 1] 2x[n - 1] + x[n]

22. A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10
pico Ampere. The reverse saturation current at 40°C for the same bias is
approximately.
A. 30 pA
B. 40 pA
C. 50 pA
D. 60 pA

23. For the system in the given figure. The transfer function C(s)/R(s) is

A. G1 + G2 + 1
B. G1 G2 + 1

C. G1 G2 + G2 + 1

D. G1 G2 + G1 + 1

24. Propagation delay time, tPLH, is measured fro m the _.

A. triggering edge of the clock pulse to the LOW-to-HIGH transition of the output

B. triggering edge of the clock pulse to the HIGH-to-LOW transition of the output

C. preset input to the LOW-to-HIGH transition o f the output

D. clear input to the HIGH-to-LOW transition of the output

25. In an n-channel JFET, what will happen at the pinch-off vo ltage?

A. the value of VDS at which further increases in VDS will cause no further increase

in ID

B. the value of VGS at which further decreases in VGS will cause no further increases

in ID
C. the value of VDG at which further decreases in VDG will cause no further

increases in ID

D. the value of VDS at which further increases in VGS will cause no further increases
in ID

26. In a J-K FF we have J = Q and K = 1. Assuming the FF was initially cleared and then
clocked for 6 pulses, the sequence at the Q output will be

A. 010000

B. 011001
C. 010010
D. 010101

27. For the 8085 assembly language program given below, the content of the accumulator
after the execution of the program is

A. 00H

B. 45H

C. 67H

D. E7H
28. How many address bits are needed to select all memory locations in the 2118 16K × 1
RAM?
A. 8

B. 10

C. 14

D. 16

29. Convert the fo llowing SOP expressio n to an equivalent POS expressio n.

A.

B.

C.

D.

30. Calculate the resistivity of n-type semiconductor from the following data, Density o f
ho les = 5 x 1012 cm-3 . Density o f electrons = 8 x 1013 cm-3 , mobility of conduction
electron = 2.3 x 104 cm2 / V-sec and mobility of holes = 100 cm2 /V-sec.
A. 0.43 Ω-m
B. 0.34 Ω-m

C. 0.42 Ω-m

D. 0.24 Ω-m

31. In all metals

A. conductivity decreases with increase in temperature

B. current flow by electrons as well as by ho les

C. resistivity decreases with increase in temperature

D. the gap between valence and conduction bands is small

32. Assertion (A): Two transistors one n-p-n and the other p-n-p are identical in all
respects (doping, construction, shape, size). The n-p-n transistor will have better
frequency response.
Reason (R): The electron mobility is higher than hole mobility.
A. Both A and R are true and R is correct explanation of A

B. Both A and R are true but R is not a correct explanation of A

C. A is true but R is false

D. A is false but R is true

33. Which of the fo llowing elements act as donor impurities?

Gold
Phosphorus
Boron
Antimony
Arsenic
Indium

Select the answer using the fo llowing codes :

A. 1, 2 and 3

B. 1, 2, 4, and 6

C. 3, 4, 5 and 6

D. 2, 4 and 5

34. The open loop transfer function of a unity feedback control system is given

as The phase cross over frequency and the gain margin

are respectively.

A.
and

B.
and

C.
and

D.
and
35. Find current i.

A. 4/5 A

B. 5/4 A

C. 1.23 A

D. 1.32 A

36. The circuit I in figure is

A. 1 mA

B. 4 mA

C. 8 mA

D. 10 mA
37. For dielectric to dielectric interface with surface charge density, which of the
fo llowing statements are true?

A. 1, 2 and 3

B. 1, 2 and 4

C. 1, 2 only

D. 1, 4 only

38. The early effect in a BJT is caused by

A. fast turn on
B. fast turn off
C. large collector base reverse bias
D. large emitter base forward bias

39. In an integrated circuit the SiO 2 layers provide

A. electrical connection to external Ckt.

B. physical strength

C. iso lation

C. conducting path.

40. Which impurity atom will give p type semiconductor when added to intrinsic
semiconductor?
A. Phosphorus

B. Boron

C. Arsenic

D. Antimo ny
41. Zener breakdown occurs
A. due to rapture of covalent band

B. mostly in germanium junctions

C. in lightly doped junctions

D. due to thermally generated minority carriers

42. In modern MOSFETS, the material used for the gate is

A. high purity silicon

B. high purity silica

C. heavily doped polycrystalline silicon

D. epitaxial grown silicon

43. Consider the fo llowing statements.

Etching
Exposure to UV radiation
Stripping
Developing
After a wafer has been coated with photo resist the correct sequence of these
steps in photolithography is
A. 2, 4, 3, 1
B. 2, 4, 1, 3

C. 4, 2, 1, 3

D. 3, 2, 3, 1

44. Peak inverse voltage will be highest for

A. half wave rectifier

B. full wave rectifier

C. bridge rectifier

D. three phase full wave rectifier

45. Figure shows characteristics curves for bipolar transistor. These curves are

A. output characteristics of n-p-n transistor (commo n base)

B. output characteristics of p-n-p transistor (commo n base)

C. output characteristics of n-p-n transistor (commo n emitter)

D. output characteristics of p-n-p transistor (commo n emitter)