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Advanced Power Semiconductor Devices (2014)

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2 views

Advanced Power Semiconductor Devices (2014)

Uploaded by

evelin9796
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Question Paper Code: 83298

M.E. DEGREE EXAMINATION, JANUARY 2014.

First Semester

Power Electronics and Drives

PX 7104 - ADVANCED POWER SEMICONDUCTOR DEVICES

(Regulation 2013)

Time : Three hours Maximum: 100 marks


Answer ALL questions.

PART A- (10 x 2 = 20 marks)


1. Distinguish between Power and linear diodes.

2. Define 'Safe operating Area'.

3. How is the secondary breakdown avoided in a BJT?

4. What are current controlled devices? Mention its applications.

5. What are the limitations of MOSFET? How does single electron theory
overcome this limitations?

6. Compare RCT and FCT.

7. Draw the gate driver circuit of a BJT.

8. What is the need of isolation for power semiconductor devices?

9. Mention any four types of heat sink, suitable for power semiconductor devices.

10. What are the parameters to be considered for proper mounting of the device
with heat sink?

PART B - (5 x 16 = 80 marks)

11. (a) (i) Discuss the device selection strategies of power semiconductor
devices in detail. (8)

(ii) Elucidate in detail the EMI impact due to switching of the power
semicondcutor devices. (8)

Or
(b) Two diodes are connected in series to' share a total DC reverse voltage of
VD=5KV.The reverse leakage currents of two diodes are IS1= 30mA and
IS2=35mA.
(i) Find the diode voltages if the voltage sharing resistances are
R1=R2=100kQ. (8)
(ii) Find the voltage sharing resistances Rl & R2 if the diode voltages
are equal i.e VDl= VD2= VD/2. (8)
12. (a) (i) Discuss the two transistor analogy of thyristor with suitable
diagrams. (8)
(ii) What are converter grade and inverter grade thyristors? Give two
examples for each and discuss their applications. (8)
Or
(b) (i) With a neat circuit diagram explain the parallel operation of SCR
devices. (8)
(ii) Discuss the operation ofNPN transistor based darlington pair. List
its advantages and disadvantages. (8)
13. (a) Describe the construction, static and switching characteristics of IGBT
with neat diagrams.
Or
(b) With suitable illustrations and diagrams discuss the steady state and
dynamic state models of a MOSFET device in detail.
,14. (a) With a suitable diagram, explain the thyristor protection against
(i) Over voltages / currents (6)
(ii) di/dt (5)
(iii) dv/dt. (5)
Or
(b) (i) Draw and discuss the significance and applications of a snubber
circuit. (6)

(ii) Discuss the design procedures ~d the operation of gate driver


circuit for a SCR device. (10)
15. (a) (i) Obtain electrical equivalent circuit of thermal model of a
semiconductor device. (10)
(ii) Write a technical note .on liquid and vapour- phase cooling. (6)
Or
(b) (i) A power device has a thermal capacity of 0.2J;Ocand a thermal
resistance of 0.7°c/w. Determine the maximum power dissipation
the power devices withstand for O.lsec for a temperature not
exceeding40°C.· (8)
(ii) Discuss the various mounting techniques with suitable diagrams.(8)

2 83298

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