1

EC/EE/IN Hinglish
PRACTICE SHEET 01
Subject : Analog Electronics
Chapter : Basic Introduction to electronics
And Diode Circuits
1. The input Impedance and output Impedance of Current 8. If the voltage Amplifier has Rin = 3 kΩ,
Amplifier is AI = 100, R = 10 kΩ
(a) Low, Low (b) High, High
(c) Low, High (d) High, Low Current

2. The input Impedance and output Impedance of Voltage

Amplifier is Vo
Find
(a) Low, Low (b) High, High Vs
(c) Low, High (d) High, Low
9. We have a trans conductance amplifier with Ri = 10 kΩ,
3. The input Impedance and output Impedance of the Ro = 10 kΩ, Gm = 5 A/V. Convert this amplifier into
Trans-conductance Amplifier is current Amplifier then, AI of this amplifier is ______?
(a) Low, Low (b) High, High
10. We have a trans conductance amplifier with Ri = 10 kΩ,
(c) Low, High (d) High, Low
Ro = 10 kΩ, Gm = 5 A/V. Convert this amplifier into
voltage Amplifier then, AV of this amplifier is ______?
4. The input Impedance and output Impedance of Trans-
resistance Amplifier is 11. If the amplifier have Ri = Ro = 10 kΩ, Gm = 10 A/V and
(a) Low, Low (b) High, High AV = 100
(c) Low, High (d) High, Low

5. Internal Resistance of voltmeter and ammeter is

(a) Low, Low (b) High, High
Vo
(c) Low, High (d) High, Low Find
Vs
6. If the input Signal Power is 10 mW and Output Signal
power is 100 W then power gain of amplifier is _____ 12. If the amplifier have Ri = Ro = 10 kΩ, Rm = 10 V/A and
dB. AI = 100.

7. If the voltage Amplifier has Rin = 1 kΩ, Av = 100,

Ro = 10 kΩ

Vo
Find
Is
13. Consider the given circuit and a waveform for the input
Vo voltage. The diode in circuit has cutin voltage V = 0.
Find .
Vs
2

14. If v1 = 10 V and v2 = 5 V, then output voltage v0 is

(a) 9 V
(b) 9.474 V
(c) 0 V
(d) 8.943 V
The waveform of output voltage v0 is
15. If v1 = v2 = 10 V, then output voltage v0 is
(a) 9 V
(b) 9.474 V
(c) 4 V
(d) 8.943 V
(a)
16. If v1 = –5 V and v2 = 5 V, then v0 is
(a) 9.474 V
(b) 8.943 V
(c) 4.5 V
(d) 9 V

(b) Common Data For Q.17 and 18 :

Consider the circuit shown below. Assume diodes are ideal.

(c)

17. If v1 = v2 = 10 V, then output voltage v0 is

(a) 0 V (b) 9.737 V
(c) 9 V (d) 9.5 V
(d)

18. If v1 = –5 V and v2 = 10 V, then output voltage v0 is

Common Data For Q.14 to 16 :
Consider the circuit shown below. Assume diodes are ideal. (a) 9 V (b) 9.737 V
(c) 9.5 V (d) 4.5 V

19. For the circuit shown below cutin voltage of diode is

V = 0.7 V. what is the value of v and i ?

(a) 2.3 V, 2.65 mA (b) 2.65 V, 2.3 mA

(c) 2 V, 0 mA (d) 0 V, 2.3 mA
3

20. For the circuit shown below the value of v and i are (if Common Data For Q.23 to 25 :
the diode is ideal) The diodes in the given circuit have linear parameter of V
= 0.6 V and rf = 0

(a) +5 V, 0 mA (b) +1 V, 0.6 mA

(c) +5 V, 0.4 mA (d) +1 V, 0.4 mA 23. If v1 = 10 V and v2 = 0 V, then v0 is ______ volts.

21. The diode circuit in figure shown below the biasing of 24. If v1 = 10 V and v2 = 5 V, then v0 is ______ volts.
the diode D1, D2 is
25. If v1 = v2 = 0, then output voltage v0 is ______ volts.

Common Data For Q.26 and 27 :

Given that a half-wave rectifier circuit driven from a
transformer having a secondary voltage of 12.6 Vrms, f = 60
Hz with R = 15  and C = 25 mF. Assume the diode on
voltage Von = 1 V.

(a) ON, ON (b) ON, OFF

(c) OFF, ON (d) OFF, OFF

22. Consider the given a circuit and a waveform for the 26. The value of the DC output voltage (Vo, dc) is ______
input voltage. volts.

27. The value of ripple voltage is ______ volts.

28. The diode in the circuit shown below have linear

parameter of V = 0.7 V and rf = 0 . The value of the
If the diode has cut in voltage V = 0, the output current (ID2) in diode D2 is _______ mA.
waveform of the circuit is

(a) (b)

29. A full wave bridge diode rectifier uses diodes having

forward resistance of 50 ohms each. The load
resistance is also 50 ohms. The voltage regulations is
(c) (d) (a) 20% (b) 50%
(c) 100% (d) 200%
4

30. The transformer utilization factor (TUF) is defined as 35. The output voltage V0 is
Pdc P
(a) (b) dc
Pac rated Pac
I rms Im
(c) (d)
I dc I dc

31. In a half wave rectifier, the peak value of the ac.

voltage across the secondary of the transformer is (a) 21.7 V (b) 15 V
20√2 V. If no filter circuit is used, the maximum d.c. (c) 7.51 V (d) 4.32 V
voltage across the load will be
(a) 28.28 V (b) 25 V 36. Two diodes are connected in series to share a DC
(c) 14.14 V (d) 9 V reverse voltage of VD = 5 kV . The reverse leakage
currents of the two diodes are I S1 = 30mA and
32 In the circuit shown in below figure. The value of
I S 2 = 35mA . Find the diode voltage in the voltage
impedance form AB is_______ k .
sharing resistances are equal, R1 = R2 = 100k .

33 In the circuit shown in below figure. The value of e0

(a) VD1 = 2500V, VD2 = 2500V
is ____________V.
(b) VD1 = 2250V, VD2 = 2750V
(c) VD1 = 2750V, VD2 = 2250V
(d) VD1 = 2000V, VD2 = 3000V

37. The DC output voltage in the circuit shown in figure in

volts, if the diode cut-in voltage, V = 0.6 V, non-
ideality factor of the diode,  = 1 and thermal voltage,
VT = 25 mV is

34. A diode whose V-I characteristics is shown in figure

(a) is connected to figure (b) as shown find I0 .

(a) 1 mA (b) 100 mA (a) 0.575 (b) 0.6

(c) 10 mA (d) 0.1 mA (c) 0.625 (d) 10 V
5

38. In the voltage regulator circuit shown in figure, the 42. The Q-point for the zener diode in figure is,
value of Rs and maximum power dissipation across
zener diode respectively. (Consider zener diode as
ideal).

(a) 0.34 mA, 4 V

(b) 0.34 mA, 4.93 V
(c) 0.94 mA, 4 V
(a) 140 , 2.6 Watts (b) 40 , 2.6 Watts (d) 0.94 mA, 4.93 V
(c) 70 , 1.6 Watts (d) 20 , 2.4 Watts
43. A 6 V Zener diode voltage regulator circuit as shown
in figure operates from a source that varies from 10 to
39. Determine V0 if VD = 0.7 V,
14 V, the series resistance is 100  , and the load
draws a current that varies from 0 to 30 mA. The power
dissipation in the Zener diode under worst-case
conditions (i.e., the highest power dissipation) is

(a) 9.3 V (b) 8.3 V

(c) 6.97 V (d) 10 V
40. In the voltage regulator shown in figure, the load
current can vary from 100 mA to 500 mA. Assuming (a) 0.18 W (b) 0.24 W
that a Zener diode is ideal (i.e. the Zener knee current (c) 0.36 W (d) 0.48 W
is negligibly small and Zener resistance is zero in the
breakdown region), the value of R is 44. Consider the shunt regulator circuit shown in figure
with Rs = 0.75k, RL = 1k, Vs = 15V zener
breakdown voltage Vz = 9V , rated power of zener
diode PZM = 25mW .

(a) 7  (b) 70

(c) 70 / 3 (d) 14 
The load voltage VL is
41. A 12 V, 5 to 50 mA Zener diode is used as voltage (a) 8.57 V (b) 9 V
regulator as shown in figure. Load current varies from (c) 9.57 V (d) 10.57 V
5 to 40 mA. The suitable range of series resistance RS
is
(a) 181   RS  222  (b) 281   RS  222 
(c) 181   RS  333  (d) 381   RS  333 
6

45. A 5 V zener diode voltage regulator circuit is as shown (c) Transmit that part of sine wave, which lies above
in figure operates from a source that varies from 10 to – 4 V and below + 8 V.
14 V. The load current varies from 0 to 10 mA. The (d) Transmit that part of sine wave, which lies below
value of the series resistance so that the minimum + 4 V and above – 8 V.
magnitude of the zener diode current is 5 mA, is
48. Consider the circuit shown in the figure, assume that
the diodes are ideal. The breakdown voltage of zener
diode is shown in circuit. The transfer characteristic of
circuit is

(a) 333.33  (b) 600 

(c) 166.66  (d) 300 

46. Consider the following circuit

49. The cut-in voltage of Zener diode Dz and diode D

shown in the figure below is 0.7 V. Breakdown voltage
of Dz is 0.3 V and reverse breakdown voltage of D is
50 V. The other parameters can be assumed to be the
same as those of an ideal diode. Then what are the
values of the peak output voltage V0 ?

For the circuit shown in the above figure, which one of

the following is a correct statement?
(a) D2 does not conduct for any value of Vi
(b) V0 = 10V , D2 does not conduct for any value of
Vi  10V
(c) V0 = 10V , D2 does not conduct for any value of
Vi  20V Positive Half Negative Half
Vi cycle in V cycle in V
(d) V0 = , D2 does not conduct for any value of
2 (a) 3.3 1.4
Vi  15V (b) 4 5
47. The function of the following circuit if the input is a (c) 3.3 3.3
sine wave
(d) 4 4

(a) Transmits that part of sine wave, which is above

+ 8 V and below + 4 V.
(b) Transmits that part of sine wave, which lies
between + 4 V and + 8 V.
7

50. For the circuit shown is the assume ideal diodes with 51. A dc current of 26 A flows through the circuit
zero forward resistance and zero forward voltage drop. shown. The diode in the circuit is forward biased and it
The current through the diode D2 in mA is has an ideality factor of one. At the quiescent point, the
___________. diode has a junction capacitance of 0.5 nF. Its neutral
region resistances can be neglected. Assume that the
room temperature thermal equivalent voltage is 26 mV.

For  = 2 106 rad/sec , the amplitude of the small-

signal component of diode current (in A , correct to
one decimal place) is ______.

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1

EC/EE/IN Hinglish
PRACTICE SHEET 02
Subject : Analog Electronics
Chapter : Diode Circuits and BJT Circuits

1. The diodes and capacitors in the circuit shown are 4. In a half-wave rectifier, if an a.c. supply is 60 Hz, then
ideal. The voltage v(t) across diode D1 is what is the a.c. ripple frequency at output?
(a) 30 Hz (b) 60 Hz
(c) 120 Hz (d) 15 Hz
5. A half-wave rectifier having a resistance load of 1 k
rectifies an a.c. voltage of 325 V peak value and the
diode has a forward resistance of 100 . What is the
RMS value of the current?
(a) 295.4 mA (b) 94.0 mA
(a) cost – 1 (b) sint
(c) 147.7 mA (d) 208.0 mA
(c) 1 – cost (d) 1 – sint 6. In a centre tap full wave rectifier, 100 V is the peak
2. Using small signal analysis calculate vd (ac). Assume voltage between the centre tap and one end of the
VD,ON = 0.7 V. secondary. What is the maximum voltage across the
reverse biased diode?
(a) 200 V (b) 141 V
(c) 100 V (d) 86 V
7. In the figure, D1 is a real silicon pn junction diode with
a drop of 0.7 V under forward bias condition and D2
is a Zener diode with breakdown voltage of –6.8 V.
The input Vin(t) is a periodic square wave of period T,
whose one period is shown in the figure.

(a) 5.68 mV (b) 2.68 mV

(c) 8.36 mV (d) 3.26 mV
3. In the voltage regulator shown in the figure. The load
current can vary from 100 mA to 500 mA. Assuming
that the Zener diode is ideal (i.e. the Zener knee
current is negligibly small and Zener resistance is zero
in the breakdown region). The value of R is
Assuming 10 >> T, where  is the time constant of
the circuit, the maximum and minimum values of the
output waveform are respectively.
(a) 7.5 V and –20.5 V
(b) 6.1 V and –21.9 V
(c) 7.5 V and –21.2 V
(d) 6.1 V and –22.6 V
(a) 7  (b) 70 
70
(c)  (d) 14 
3
2

8. For the Zener diode shown in the figure, the Zener 11. In the figure shown below we know the input and
voltage at knee is 7 V, the knee current is negligible output waveform of the circuit
and the Zener dynamic resistance is 10 . If the input
voltage Vi range from 10 V to 16 V, the output voltage
Vo ranges from

the expected circuit that will replace the box given

above will be

(a)
(a) 7.00 to 7.29 V (b) 7.14 to 7.29 V
(c) 7.14 to 7.43 V (d) 7.29 to 7.43 V
9. In the circuit shown. Vs is a 10 V square wave of
period, T = 4 ms with R = 500  and C = 10 F. The
capacitor is initially uncharged at t = 0, and the diode
is assumed to be ideal. The voltage across the (b)
capacitor (Vc) at 3 ms is equal to _____ volts (rounded
off to one decimal place).

(c)

10. Select the correct output (Vo) wave shape for a given
input (Vi) in the clamping network given below: (d)

12. In the figure, silicon diode is carrying a constant

current of 1 mA. When the temperature of the diode is
20°C, VD is found to be 700 mV. If the temperature
rises to 40°C, VD becomes approx equal to

(a) (b)

(a) 740 mV (b) 650 mV

(c) 680 mV (d) 700 mV

(c) (d)
3

13. An non-ideal diode is biased with a voltage of –0.03V

and diode current of I1 is measured. The thermal
15 (b)
voltage is 26 mV and  = . The voltage in V at
13
which the measured current increases by 1.5I1 is
closest to
(a) –4.50 (b) –0.09
(c) –0.02 (d) –1.50
(c)
14. In the circuit shown in figure, Vo = 3 V when IL = 0
and Vo changes by 40 mV per 1 mA of load current.
Find the value of R (assume all four diodes are
identical) relative to a diode with 0.7 V drop at 1 mA
current. Assume  = 1. (d)

16. Consider the given circuit and a waveform for the

input voltage, shown in figure below. The diode in
circuit has cutin voltage Vr = 0.
vi
+ 20
2.2 k
vi ~ vo
5V t
(a) 7.6  (b) 9.8  – –5
(c) 4.8  (d) 5 
The waveform of output voltage vo is
vo
vo
15. A clipper circuit is shown below: 20
15

t t
–5
(a) –10 (b)

vo vo
20 20

5
(c) t (d) t

Assuming forward bias voltage drops of the diodes to

be 0.7 V. the input-output transfer characteristics of 17. Consider the given circuit and a Worm for the input
the circuit is voltage, shown in figure below. The diode in circuit
has cutin voltage Vr = 0.
2V vi
(a) 20
+

vi ~ 10 k vo
t
– –5

The waveform of output voltage vo is

4

vo

18 vo
(a) (d)
10
t
vo 3.33
vi
22 –10 4.33 10
(b) 19. For the circuit shown below £ach diode has Vr = 0.7
V.
+10 V
t
vo 10 k

t D1 D2
(c) –3
vs vo

D3 D4 10 k

vo
10 k

t –10 V
The vo for −10  vs  10 V is
–7 `
vo
(a)
(d) 8.43

18. For the circuit shown below, let cut in voltage Vr = 0.7 vi
–10 10
V.
–8.43
+
20 k 10 k
vi ~ vo
(b) vo
10 V 10 V
– 7.48
The plot of vo verses vi for −10  vi  10 V is
vo vi
(a) –10 10
9.3 –7.48

3.33
vi vo
–10 3.33 10 (c)
5.68
vo
(b)
9.3 vi
–10 –6.8 6.8 10

3.33 –5.68
vi vo
–10 4.03 10 (d)
vo 4.65
(c)
10 vi
–10 –4.65 4.65 10

3.33 4.65
vi
–10 3.33 10
5

20. For the circuit shown below the input voltage vi, is as (c) vo
shown in figure.
C 15
vi
+ 10 t
vi ~ R vo t
–15
– –10 (d) None of the above
Assume the RC time constant large and cutin voltage
of diode Vr = 0. The output voltage vo is 22. In the circuit I in DC current and capacitors are very
large. Using small signal model which of following is
(a) vo
correct?

10

t I C
Rs C1 2

(b) vo
20 +
vs vo
–

t VT
(a) vo = vs
vo VT + IRs
(c)
t
(b) vo = vs
–10 vs
(c) vo =
VT + IRs
(d) vs = 0
(d) vo
t
Common Data for Q. 23 and 24 :
The diode in the circuit shown below has the non linear
–20 terminal characteristics as shown in figure. Let the voltage
be vi = cost V.
21. For the circuit shown below the input voltage vi, is as 100  a iD (mA)
shown in figure.
iD
C vi ~ + 4
vi vD
+ 10
100 
–
t 2V
vi ~ R vo vD (V)
5V 0.5 0.7
b
– –20
23. The current iD is
Assume the RC time constant large and cutin voltage (a) 2.5 (1 + cost) mA
of diode Vr = 0. The output voltage vo is (b) 5(0.5 + cost) mA
v
(a) 35 o (c) 5(1 + cost) mA
(d) 5(1 + 0.5cost) mA
5
t 24. The volage vD is
(a) 0.25(3 + cost) V
vo (b) 0.25(1 + 3 cost) V
(b)
(c) 0.5(3 + 1 cost) V
25

t
–5
6

(d) 0.5(2 + 3 cost) V 29. The equivalent circuit of a diode, during forward
biased and reverse biased conditions, are shown in the
Common Data for Q. 25 to 27 : figure.
(I) + – + –
In the voltage regulator circuit shown below the zener
diode current is to be limited to the range 5  ir  100 mA. (II) – +

10 k
12 
iz iL

6.3 V
Vz = 4.8 V
Rz = 0 RL 10 sint ~ Vo 10 k

5V

25. The range of possible load current is If such a diode is used in clipper circuit of figure given
(a) 5  iL  130 mA above, the output voltage Vo of the circuit will be
(b) 25  iL  120 mA
(a)
(c) 10  iL  110 mA
(d) None of the above
+5 V
 2
26. The range of possible load resistance is t
(a) 60  RL  372 –5 V
(b) 60  RL  
(c) 40  RL  2 (b)
(d) 40  RL  360
+5.7 V

27. The power rating required for the load resistor is 0 t

(a) 576 mW (b) 360 W
(c) 480 mW (d) 75 W –10 V
(c)
28. In the voltage doubler circuit shown in the figure, the
+5.7 V
switch ‘S’ is closed at t = 0. Assuming diodes D1 and
 2
D2 to be ideal, load resistance to be infinite and initial 0 t
capacitor voltages to be zero. The steady state voltage
across capacitor C1 and C2 will be –10 V
Vc1 D2
t=0 (d)
S + –
+ 10 V
5 sint ~ D1 C2
–
Vc2 Rload
 2
0 t
–5.7 V
(a) Vc1 = 10 V, Vc2 = 5 V
(b) Vc1 = 10 V, Vc2 = − 5 V
(c) Vc1 = 5 V, Vc2 = 10 V
(d) Vc1 = 5 V, Vc2 = −10 V
7

30. The cut-in voltage of both Zener diode DZ and diode 33. In the voltage regulator circuit below rating of zener
D shown in figure is 0.7 V, while break-down voltage diode is given, then the range of values of vi, that will
of DZ is 3.3 V and reverse break-down voltage of D is
maintain the zener diode in the ‘ON’ state is
50 V. The other parameters can be assumed to be the
same as those of an ideal diode. The values of the peak Ri = 220 
+
output voltage (Vo) are
1 k Vz = 20 V
vi RL 1.2 k
IzM = 60 mA
DZ
−
10 sint Vo 1 k
 = 314 rad/sec D
(a) 16.87 < vi < 36.87 V
(b) 16.87 < vi < 23.67 V
(a) 3.8 V in the positive half cycle and 1.4 V in the
negative half cycle. (c) 23.67 < vi < 36.87 V
(b) 2 V in the positive half cycle and 5 V in the (d) None of the above
negative half cycle.
(c) 3.3 V in both positive and negative half cycles.
(d) 4 V in both positive and negative half cycle 34. Assume that the diode cut in voltage for the circuit
shown below is Vr = 0.7 V . Which of clamper circuit
31. The voltage regulator shown below, what are the perforin the function shown below ?
nominal and worst case values of zener diode current vi vo
if the power supply voltage, zener break down voltage
10 V
and register all have 5 % tolerance? 2.7 V
+ + t
Rs = 15 k t vi Clamper vo
− −
−10 V −17.3 V
+ Vz = 9 V RL 10 k
vs = 30 V −
Rz = 0 V
C
+ +
I znom I znom I zworst
(min) D
vi − vo
(a) 1.2 mA 0 mA 0 mA 2V
− + −
(b) 0.5 mA 0.70 mA 0.103 mA (a)
(c) 0.5 mA 0.60 mA 0.346 mA C
(d) 0.5 mA 0.796 mA 0.215 mA + +
D
vi + vo
32. The diode in the circuit shown below have linear − 2V
parameter of Vr = 0.7 (for Si), Vr = 0.3 (for Ge) and rf − −
(b)
= 0 for both the diode. What is the biasing condition C
of diode D1 and D2? + +
+15 V D
vi − vo
2V
− + −
Si D1 D2 Ge (c)
+ −
+ +
D 2V
vo
vi C vo
50 k
− −
(d)

(a) D1 – ON, D2 – ON (b) D1 – ON, D2 – OFF

(c) D1 – OFF, D2 – ON (d) D1 – OFF, D2 – OFF
8

Common Data for Q.35 to 37 :

The circuit diagram of a Zener regulator is shown in figure 39. The new value of Vref at a temperature of 50°C is
below. The data sheet specification for Zener IN4742A (a) 6.186 V (b) 6.886 V
provides following values
(c) 6.914 V (d) 6.700 V
Vz = 12 V at IzT = 21 mA, Rz = 9 (assume constant) IzM = 76
mA, Izk = 1 mA.
R
40. Consider the given circuit. The diode in circuit has cut
330  I1 IL
in voltage Vr = 0.6 V and zener diode voltage Vz = 9.4
vi = 24 V RL v o
V.
1 k
+
35. The values of Zener diode voltages (Vz)max, (Vz)min D2
D1
respectively are vi + D3 vo
−
(a) 11.82 V, 12.5 V (b) 12.5 V, 11.82 V
9.4 V D4
(c) 12.18 V, 11.82 V (d) 12.5 V, 11.5 V −

Plot vo versus vi is
36. The maximum value of load current over which the
Zener diode is in ON state.
(a) vo
(a) 36.88 mA (b) 35.88 mA
(c) 36.36 mA (d) 35.36 mA 1.8 V
vin
−10 V 1.8 V
37. The value of RL (Load resistance) corresponding to
maximum load current is −10 V

(a) 329.43  (b) 334.44 

vo
(c) 325.37  (d) 320.49  (b)

Common Data for Q.38 and 39 : 10 V

A breakdown diode has Vz = 6.2 V at 25°C and z = −1.8 V 10 V
0.02%°C. A silicon diode with VF = 0.7 V and a −1.8 V
temperature coefficient of -1.8 mV/°C is connected in
series with the breakdown diode.

(c) vo
38. The new value of reference voltage and the
10 V
temperature coefficient series combination of diode D
and zener diode. −10 V 10 V vin
R
V = 10 V Vrof
−10 V
D Vr

V1
vo
(d)
(a) 6.9 V, −0.008%/°C
(b) 6.9 V, −0.0289%/°C
(c) 6.9 V, −0.056%/°C vin

(d) 6.2 V, −0.056%/°C

9

Common Data for Q.41 and 42 : 46. Consider the circuit shown in figure. If the  of the
In the circuit shown below VZ = − 1 V transistor is 30 and ICBO is 20 mA and the input voltage
+3 V is +5 V, the transistor would be operating in
+12 V

2.2 k
500 k 15 k
4.8 k Vi Q

−3 V 10 k
41. The value of  is
−12 V
(a) 103.4 (b) 135.4 (a) saturation region
(c) 134.5 (d) 102.4 (b) active region
(c) breakdown region
42. The value of VCE is (d) cut-off region
(a) 6.4 V (b) 4.7 V
(c) 1.3 V (d) 4.2 V 47. The cutin voltage for each diode in circuit shown
below is Vγ = 0.6 V . Each diode current is 0.5 mA.
Common Data for Q.43 to 45 :
The value of R3 will be ___________ k
For the transistor shown below  = 150.
+ 10 V
+5 V

5 k
Vo
R1

+5 V
IQ R2
0V
−5 V
R3
43. If IQ = 0.1 mA, the value of Vo is
(a) 1.4 V (b) 4.5 V -5 V
(c) 3.2 V (d) None of these

48. In the voltage regulator shown below the power

44. If IQ = 0.5 mA, the value of Vo is dissipation in the Zener diode is ______ watts.
(a) 3.16 V (b) 2.52 V 150 
(c) 2.14 V (d) 3.94 V
VZ = 15 V 75 
45. If IQ = 2 mA, the value of Vo is 50 V + RZ = 0
–
(a) 4.9 V (b) − 4.9 V
(c) 0.5 V (d) − 0.5 V
10

49. The secondary transformer voltage of the rectifier Common Data for Q.50 and 51 :
circuit shown below is Vs = 60sin 260t V. Each The circuit shown has R = 100, RC = 2 k  RL = 2 k.
diode has a cut in voltage V = 0.7V . The ripple Also assume a constant diode voltage of 0.6 V and
capacitors are very large using the small signal model for
voltage is to be no more than υrip = 2V . The value of VC = 1.6 V.
filter capacitor will be __________ μF . VC
RC
C1 C2
+
+ + vo - R
vs 10 k +
vi +
vo( t) Rt
- vin(t) −

C −
-

50. What is the Q-point value of the diode current

(in mA) ?
υ (t)
51. The value of o is ____________
υin (t)

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1

EC/EE/IN Hinglish
PRACTICE SHEET 01
Subject : Analog Electronics
Chapter : BJT Circuits

1. For the transistor shown  = 25. The range of V1 such 3. For the circuit shown in figure given that
that 1.0  VCE  4.5 is IS = 8 × 10–16 A,  = 100 and VBE = 0.8 V. What is the
operating point value?

(a) IC = 1.5 mA, VCE = 1.5 V

(b) IC = 10 mA, VCE = 1.5 V
(c) IC = 1 mA, VCE = 1.5 V
(a) 1.86  V1  3.96 V (d) IC = 4 mA, VCE = 1.5 V
(b) 2.81  V1  4.46 V
(c) 1.43  V1  79 V Common Data For Q. 4 to 5:
(d) 2.18  V1  3.69 V Consider the circuit given in figure below, It is given
that: IS1 = 2IS2 = 5 × 10–16 A
2. For the circuit shown below  = 100, VBE = 0.8 V,
IS = 8 × 10–15 A. What is the operating point of the
circuit?

4. If I1 = 1.2 mA, the value of VB is

(a) 731.1 mV (b) 0 mV
(c) 730.6 mV (d) 1.5 mV

5. If circuit is at the edge of active region, what is the

(a) IC = 18.5 mA, VCE = 0.8 V value of RC
(b) IC = 18.5 mA, VCE = 1.58 V (a) 1.475 k (b) 4.95 k
(c) IC = 8 × 10–6 mA, VCE = 15.8 V (c) 0.1 k (d) None of the above
(d) IC = 18.5 mA, VCE = 2.58 V
2

Common Data For Q. 6 and 7:

For the circuit given IS = 3 × 10–17 A and VA =  and
IC = 1 mA.

(a) 0 A
(b) 10 A
(c) 100 A
(d) 1000 A
6. The value of VB is
(a) 26 mV Common Data For Q. 10 to 12:
(b) 809.6 mV For the circuit shown in Figure, IE = 1 mA,  = 99 and
(c) 726 mV VBE = 0.7 V
(d) 0 mV

7. If VA = 5 V and IC = 1 mA for VCE = 1.5 V, the value

of VB is
(a) 802.8 mV (b) 796 mV
(c) 809.6 mV (d) 26 mV

8. Consider the circuit shown in the figure. If the  of the

transistor is 30 and ICBO is 20 mA and the input voltage
is +5 V, the transistor would be operating in
10. The current through RC is
(a) 0.99 mA
(b) 1.1 mA
(c) 1.20 mA
(d) 1 mA

11. Output voltage V0 will be

(a) 16.1 Volt
(b) 14 Volt
(c) 13.9 Volt
(a) saturation region (d) None of these
(b) active region
(c) breakdown region 12. Value of resistance RF is
(d) cut-off region (a) 110.9 k
(b) 124.5 k
9. The common emitter amplifier shown in the figure is (c) 130.90 k
biased using a mA ideal current source. The
(d) None of these
approximate base current value is
3

13. Consider the circuit shown in the figure below. Given Common Data For Q. 16 and 17
that saturation current I = 5 × 10–17 Amp, VBE = 800 For the circuit in Figure,  = 100, VBE active = 0.7V
mV and  = 100 (Vthermal = 26 mV)

The transistor Q1 is operating in

16. The value of collector current ICQ is
(a) saturation region (a) 1.31 mA
(b) cut-off region (b) 0.227 mA
(c) Reverse active Region (c) 0.360 mA
(d) Forward active Region (d) 0.302 mA

Common Data For Q. 14 to 15 17. The value of VCEQ (Collector to Emitter voltage) is
Consider the transistor circuit shown below: (a) 7.51 V (b) 0.2 V
(c) –2.49 V (d) 3.65 V

Common Data For Q. 18 and 19

For the circuit shown in figure assume
 = 75, VEB active = 0.7 V

14. The value of stability factor [S(ICO)] with respect to ICO

is
(a) 90
(b) 91
(c) 1
(d) None of the above

15. The value of stability factor [S(VBE)] with respect to

VBE is 18. What is the value of collector current ICQ ?
(a) –91 S (a) 2.13 mA
(b) 1 (b) 9.9 mA
(c) –1.92 × 10–4 S (c) 1.60 mA
(d) –3.3 × 10–3 S (d) 6.6 mA
4

19. What is the value of Emitter to collector voltage

VECQ?
(a) 0.2 V
(b) 13.61 V
(c) 14.16 V
(d) 15.16 V

20. If the transistor parameters are  = 180 and early

voltage VA = 140 V and it is biased at ICQ = 2 mA,
Vthermal = 25.9 mV the value of hybrid - π parameter
gm, rπ and r0 are respectively.
(a) 14 A/V, 2.33 k, 90 k
(b) 14 A/V, 90 k, 233 k 23. If Q - point is in the center of the load line and
(c) 77 mA/V, 2.33 k, 70 k ICQ = 0.5 mA, the values of RC and VBB are
(d) 77.2 mA/V, 2.33 k, 70 k (a) 10 k, 0.95 V (b) 10 k, 1.45 V
(c) 48 k, 0.95 V (d) 48 k, 1.45 V
Common Data For Q.21 and 22:
Consider the circuit shown below. The transistor 24. The small signal parameters gm, rπ and r0 are
parameters are β = 120 and VA = ∞. (Vthermal = 0.0259 (a) 38.6 mA/V, ∞, 5.18 k
V) (b) 386 mA/V, 5.18 k, ∞,
(c) 19.3 mA/V, ∞, 5.18 k
(d) 19.3 mA/V, 5.18 k, ∞

Common Data For Q.25 and 27:

The transistor following amplifiers circuits has
parameters β = 100, rπ = 2.5 k.

21. The hybrid - π parameter values of gm, rπ and r0 are

(a) 24 mA/V, ∞, 5 k
(b) 24 mA/V, 5 k, ∞
(c) 48 mA/V, 10 k, 18.4 k 25. If input impedances of the two circuits are given as R1
(d) 48 mA/V, 18.4 k, 10 k and R2 respectively then
(a) R1 = 2.5 k, R2 = 2.5 k
22. The small signal voltage gain Aυ = υo / υs is (b) R1 = 2.5 k, R2 = 5 k
(a) – 4.38 (b) 4.38 (c) R1 = 500 k, R2 = 50 
(c) – 1.88 (d) 1.88 (d) R1 = 500 , R2 = 500 

Common Data For Q.23 and 24: 26. Ratio of voltage gain Ar1/Ar2 for the two circuit is
Consider the circuit shown below. The transistor (a) 2 (b) 0.5
parameter are β = 100 and Vi = ∞ (Vthermal = 25.9 mV) (c) 4 (d) 1
5

27. Consider an amplifier circuit shown below. Transistor vo

30. The small signal voltage gain Av = is
parameters are given as β = 100 and Vthermal = 25 m V. vs

(a) – 1.96 (b) – 3.18

(c) – 4.73 (d) – 10.43

31. If the total instantaneous emitter - collector voltage is

to remain in the range 1  vEC  11 V, the maximum
undistorted swing in the output voltage is
(a) 2.58 V peak to peak
The input impedance and voltage gain respectively are (b) 5.16 V peak to peak
(a) 0.99 k, 200 (b) 390 k, 200 (c) 1.48 V peak to peak
(c) 0.99 k, – 400 (d) 390 k, 400 (d) 2.96 V peak to peak

Common Data For Q.28 and 29: Common Data For Q. 32 and 33:
For the circuit shown below transistor parameters are Consider the common Base amplifier shown below.
β = 100, VBE (ON) = 0.7 V, VA = 80 V, (Vthermal = 26 The parameters are gm = 2 mS and ro = 250 k. Figure
mV) shows the Thevenin equivalent faced by load
resistance RL.

32. Thevenin voltage vTH is

(a) 263υi (b) 132υi
28. The input impedance is (c) 346υi (d) 498υi
(a) 100 k (b) 25 k
(c) 22.2 k (d) 201 k 33. Thevenin equivalent resistance RTH is
(a) 384 k (b) 697 k
e (c) 408 k (d) 915 k
29. The small signal voltage gain Ae = is
s
34. Consider an amplifier circuit shown in figure. If the
(a) 0.96 (b) 0.99
transistor Q1 and Q2 has parameters gm1, rπ1 and gm2,
(c) 1 (d) 0.90
rπ2 respectively, then voltage gain | Aυ | is
Common Data for Q. 30 and 31
In the circuit shown below β = 100 and VA = ∞

g m1 r2 g m 2 r2
(a) (b)
1 + g m 2 r2 1 + g m 2 r2
g m1 r1 g m1 r1
(c) (d)
g m 2 r 2 1 + g m 2 r2
6

35. The transistor parameters of Q1 and Q2 of circuit 39. For the circuit shown below,
shown in figure are (gm1, rπ1)

vo
The value of voltage gain Av = is
vi
The voltage gain |Av| of the following circuit is RC RC
(a) gm1, rπ1 (b) gm2, rπ1 (a) (b) −
1 g m1 + RE || r1 1 g m1 + RE || r 2
(c) gm1, rπ2 (d) gm2, rπ2
RC RC
(c) − (d) −
Common Data For Q. 36 to 39: 1 gm2 + RE || r 2 1 gm2 + RE || r1
For the circuit shown below, Vthermal = 26 mV,
VBE on = 0.7 V. Common Data For Q.40 and 41:
Consider the amplifier circuit shown below having
Vthermal = 25 mV.

o
36. The value of voltage gain Av = is
i
(a) – 3.85 (b) – 367.72
(c) – 2.99 (d) None of the above
40. What is value of collector current, IC and hybrid
io parameter, rπ respectively?
37. The value of current gain Ai = is
ii (a) 37.3 μA, 669 
(a) –3.85 (b) 104.73 (b) 4.67 μA, 5.35 
(c) 119.81 (d) None of the above (c) 1.13 mA, 5.35 k
(d) 4.67 mA, 669 
38. The value of input impedance zi is
(a) 68.478 k 41. What are the values of C1 and C2 so that they can be
(b) 0.716 k neglected at a frequency of 50 Hz ?
(c) 1.278 k (a) 0.105 μF, 0.763 μF
(d) 59.76 k (b) 0.005 μF, 0.863 μF
(c) 0.505 μF, 0.663 μF
(d) 0.53 μF, 0.343 μF
7

Common Data For Q.42 to 43: 43. Thevenin equivalent resistance Rth is
Consider the amplifier circuit shown below the (a) 3.16 k (b) 70.68 k
parameter are gm = 2, β = 100, r0 = 250 k. Figure (c) 2.67 k (d) None of the above
shows the Thevenin equivalent faced by load RL.
44. In the single - stage transistor amplifier circuit shown
in Figure, the capacitor CE is removed. Then, the ac
small - signal mid - band voltage gain of the
amplifier

42. Thevenin voltage Vth is

(a) 10 vi
(b) 90 vi
(c) vi (a) increase (b) decrease
(d) None of the above (c) is unaffected (d) drops to zero

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1

EC/EE/IN Hinglish
PRACTICE SHEET 01
Subject : Analog Electronics
Chapter : MOSFET
1. In the following circuit, transistors Q1 and Q2 has
following parameters:
W  W 
      20
 L 1  L 2
VTH 1  VTH 2  1V
 k 'n 1   k 'n 2  100A / V 2
+ 5V + 5V

   
V1 V2

M2 The conduction parameters for the transistors are as

M1
follows:
Kn1 = 400A/V2 Kn2 = 200A/V2
Kn3 = 100A/V2 Kn4 = 80A/V2
V3
200 A 3. The value of ID1 is
(a) 0.23 mA (b) 0.62 mA
(c) 0.46 mA (d) 0.31 mA
The voltages V1, V2 and V3 are respectively
(a) 1V, 1V, –1.1V 4. The value of ID2 is
(b) 1 V, 2V, 1V (a) 0.62 mA (b) 0.31 mA
(c) 2 V, 1 V, 1.32 V (c) 0.46 mA (d) 0.92 mA
(d) 1 V, 1 V, –1.32 V
5. For the transistor shown below, parameters are VTN =
2. Which of the following amplifier has high input 1V and Kn = 12.5A/V2. The Q-point (ID, VDS) is
impedance, low output impedance and low voltage
gain ?
(a) Common-gate (b) Common-Drain
(c) Common-source (d) None of these

Common data for Q.3 and 4:

All transistors in the circuit shown below have parameters
VTN = 1 V and  = 0.
(a) (1 mA, 8 V) (b) (0.2 mA, 4 V)
(c) (1.17 mA, 8 V) (d) (0.23 mA, 3.1 V)
2

Common Data For Q. 6 and 7 : (a) 12.24 k, 21.56 k

For an n-channel JFET, given that IDSS = 9 mA and VP = (b) 21.56 k, 12.24 k
3.5 V. (c) 1.22 k, 2.156 k
(d) 2.156 k, 1.22 k
6. Current ID for VGS = –5 V is
(a) 9 mA (b) 1.65 mA 10. In the circuit shown below, the MOSFET parameters
(c) 0 mA (d) 3.85 mA are as follows:
VTN  0.4V
7. Current ID, when VGS = 0 V, is
(a) 1.65 mA (b) 3.85 mA nCox  200A / V 2
(c) 0 (d) 9 mA W
 278
L
+ 1.8 V
8. The value of R, for which the PMOS transistor in
figure will be biased in linear region, is
 k
R1

ID
R2

Current flowing through resistor R2 equals to one

(a) 220  (b) 470  tenth (1/10) of ID (Drain current). For the value of
(c) 680  (d) 1200  Drain current ID = 0.5 mA, the value for resistors R1
and R2 are respectively
9. In the circuit shown below, the MOSFET parameters (a) 5.32 k, 10.68 k
are as follows: (b) 1.068 k, 14.932 k
VTN  0.4V
(c) 10.68k, 3.32 k
nCox  200A / V 2 (d) 3.32 k, 10.68 k
W
 111 11. Consider the circuit shown below, the transistor
L
The current flowing through R2 is one tenth of ID1. parameter are as follows:
VTN  2V
k 'n  80A / V 2
W
4
L
Drain current ID of the ID is 0.5 mA and current in
resistor R2 is 1/10 of ID.

For the value of ID = 0.5 mA, the value of resistors R1

and R2 are respectively
3

13. When the switch is in position 1, when be the value

V
of equivalent resistance, R 0  DS ?
ID
The value of resistors R1 and R2 are, respectively (a) 364  (b) 1720 
(a) 95.4 k, 104.6 k (c) 860  (d) 
(b) 142.3 k, 57.7 k
(c) 57.7 k, 142.3 k 14. When switch is in position 2, What will be the value
(d) 104.6 k, 95.4 k V
of equivalent resistance R 0  DS ?
ID
12. Consider a circuit shown in figure below. The (a) 860  (b) 1.5 k
parameter of NMOS is given as (c) Zero (d) 
k’n, = 100A/V2
W 15. The transfer characteristic of MOSFET is shown in
5
L figure below. The transistor parameter is K = 0.445
VTN = + 1V mA/V2. The values of drain current ID and
transconductance gm at point A are, respectively

8
ID (Drain current) (mA)

4
A

2
VT = 0.2 V

2 3 4 1 5
The value of Q-Point (VDSQ, IDQ) is VGS (Gate to source voltage) Volts
(a) 8.77 V, 89.7 A (a) 3.488 mA, 2 mS (b) 1.724 mA, 2.5 mS
(b) 1.599 V, 89.7 A (c) 1.7725 mS, 2 mS (d) 3.488 mA, 2.5 mS
(c) 8.77 V, 143.7 A
16. For an n-channel MOSFET biased in the saturation
(d) 6.82 V, 143.7 A
region, the parameters are Kn = 0.5 mA/V2, VTN = 0.8
Common Data For Q. 13 & 14 : V,  = 0.01 V–1, and IDQ = 0.75 mA. The value of gm
Consider the circuit shown in figure below, the transistor and r0 are
parameters are as follows: (a) 0.68 mS, 603 kΩ (b) 1.22 mS, 603 kΩ
Kn = 0.445 mA/V2 (c) 1.22 mS, 133 kΩ (d) 0.68 mS, 133 kΩ
VTN = 0.2 V
4

17. An NMOS amplifier with depletion load (ML) is 20. The amplifier input resistance is
shown in figure. Parameters for transistors MD and ML (a) 20.6 kΩ (b) 7.9 kΩ
are VTHD = + 0.8 V, KnD = 1 mA/V2, D = 0.01 V–1 (c) 29.1 kΩ (d) 104 kΩ
VTHL = –1.5 V, KnL = 0.2 mA/V2 and L = 0.01 V–1.
Common data for Q.21 to 23 :
A depletion NMOS transistor circuit is shown in figure

Transistor parameters are given as

VTH = – 2V, Kn = 5 mA/V2,  = 0.01 V–1

21. Trans-conductance gm is
If the transistors are biased at iD = 0.2 mA, then small (a) 5 mA/V
signal voltage gain Av is (b) 3.33 mA/V
(a) –224 (b) –111.75 (c) 10 mA/V
(c) 894 (d) –894 (d) 6.81 mA/V

Common data for Q.18 to 20: v0

Consider the common source amplifier shown below. The 22. Voltage gain Av = is
vs
transistor parameter are VTN = 1.5V, Kn = 0.5 mA/V2, and
(a) 0.290 (b) 0.878
 = 0.01 V–1. The resistance of Source is Rs = 4 kΩ .
(c) 0.60 (d) 0.44

23. Output impedance R0 is

(a) 20 kΩ (b) 1.13 kΩ
(c) 137 Ω (d) 91.9 Ω

Common data for Q.24 to 26:

Consider the source follower amplifier circuit shown in
figure. Transistors parameters are VTH = 1.5 V, Kn = 4
mA/V2,  = 0.01 V–1.

18. The small-signal voltage gain Av is.

(a) –8.2 (b) –5.6
(c) –3.1 (d) –1.9

19. The amplifier output resistance is

(a) 4.76 kΩ (b) 100 kΩ
(c) 5 kΩ (d) 0
5

24. Small signal transconductance is Common data for Q.30 and 31:
(a) 29.52 mA/V (b) 59.04 mA/V Consider the source-follower circuit shown below. The
(c) 11.3 mA/V (d) 5.65 mA/V value of parameter are gm = 2 mS and r0 = 100 kΩ.

v0
25. The small signal voltage gain Av = is
vs
(a) 1.20 (b) 0.86
(c) 1.13 (d) 0.98

26. Output resistance of the amplifier circuit is

(a) 707 Ω (b) 12.5 kΩ
(c) 67.1 Ω (d) 78.7 Ω

27. Consider the NMOS common-gate circuit shown 30. The voltage gain Av is
below. The parameters are gm = 2 mS and r0 =  . The (a) 0.89 (b) –0.89
voltage gain Av is (c) 2.79 (d) –2.79

31. The output resistance R0 is

(a) 100 kΩ (b) 0.498 kΩ
(c) 1.33 kΩ (d) None of these

32. Which of the following amplifier has high input

resistance and high output resistance
(a) 4.44 (b) – 4.44
(a) Common-source
(c) 2.22 (d) –2.22
(b) Common-drain
Common data for Q.28 and 29:
(c) Common-gate
Consider the common gate circuit shown below.
(d) None of these
Common data for Q.33 and 34:
Consider the cascode circuit shown below. The transistor
parameter are:
VTN1 = VTN2 = 1.2 V
Kn1 = Kn2 = 0.8 mA/V2
1 = 2 = 0

Transistor. Parameters are

VTH = 1V, Kn = 1 mA/V2,  = 0

28. Small signal transconductance is

(a) 2 mA/V (b) 8 mA/V
(c) 1 mA/V (d) 4 mA/V

29. If the input current is i1 = (100sin ωt) μA, then output

v0 is
(a) (1.13 sin ωt)V (b) (0.283 sinωt).V
(c) (1.13 cosωt) V (d) (0.283 cosωt) V
Given the common drain current for both MOSFETs,
ID = 0.4 mA
6

33. The value of transconductance gm1 and gm2 for MOS Common data for Q.37 to 40:
M1 and MOS M2 are respectively Consider a source follower circuit shown in figure below.
(a) 1.14 mA/V, 0.565 mA/V Transistor has the parameters as follows:
(b) 0.56 mA/V, 0.565 mA/V Kp = 2mA/V2, VTP = – 2V and  = 0.02 V–1
(c) 0.64 mA/V, 0.64 mA/V
(d) 1.14 mA/V, 1.14 mA/V

34. What is the value of small signal voltage gain A0 =

v0
?
vi
(a) –3.24 (b) –2.85
(c) – 1.4 (d) –0.784

Common data for Q.35 and 36:

Consider the amplifier circuit shown below. The transistor 37. The value of Q point (VSDQ, IDQ) is
parameter are as follows: (a) 2.78 V, 1.21 mA
VTP = 2V, KP = 0.5 mA/V2, and  = 0 (b) 1.0985, 1.62 mA
(c) 5.16 V, 1.21 mA
(d) 3.52 V, 1.62 mA

38. The value of transconductance gm and small output

resistance τ0, respectively are
(a) 41.3 mA/V2, 3.11 kΩ
(b) 3.11 mA/V2, 41.3 kΩ
(c) 3.6 mA/V2, 30.86 kΩ
(d) 30.86 mA/V2, 3.6 kΩ

39. What is the value of small signal voltage gain Au =

35. If the value of source to drain voltage is VSD = 6 V and v0
?
drain current is ID = 2 mA, then the value of RD and v in
RS, respectively are (a) 0.886 (b) 0.98
(c) 2.98 (d) 2.886
(a) 5 kΩ, 2 kΩ (b) 3 kΩ, 4 kΩ
40. What is the value of small signal current gain Ai = i0/ii?
(c) 4 kΩ, 3 kΩ (d) 2 kΩ, 5 kΩ
(a) 64.2 (b) 0.882
(c) 0.214 (d) 11.339
36. What is the value of small signal voltage gain
v
A0  0 ? Common data for 41 to 42:
vi
(a) –2 (b) –8 Consider the circuit shown in below. The transistor
(c) –4 (d) None of the above parameters are
Kn = 0.2 mA/V2, VTN = 1.5 V and  = 0
7

Common Data for Q.44 to 46 :

Consider the circuit shown in figure below. The transistor
parameters are:
Kp = 1 mA/V2, VTP = – 1.5 V and  = 0

Given that drain current, IDQ = 0.5 mA and drain to source

voltage VDS = 4.5 V.
44. The value of small signal parameters gm and r0 are
respectively
41. What is the value of resistance RD ?
(a) 8.68 mA/V, 
(a) 9 kΩ (b) 0.5 kΩ
(b) 4.34 mA/V, 0.55 kΩ
(c) 8.5 kΩ (d) 1.75 kΩ
(c) 2.68 mA/V, 55 kΩ
(d) 2.68 mA/V, 
42. If input resistance of circuit is Rm = 200 k, then the
value of resistors R1 and R2 respectively are
45. What is the value of 3 dB frequency due to coupling
(a) 317 kΩ, 541 kΩ
capacitor Cc1 ?
(b) 636 kΩ, 291 kΩ
(a) 70 Hz (b) 24.1 Hz
(c) 291 kΩ, 636 kΩ
(c) 59.4 Hz (d) 170 Hz
(d) 541 kΩ, 317 kΩ

46. What is the value of 3 dB frequency due to coupling

43. If 3 dB frequency due to Cc is 20 Hz then the value of
capacitor Cc2 ?
coupling capacitor Cc is
(a) 3.1 Hz (b)  Hz
(a) 0.0398 μF (b) 88.46 μF
(c) 132.6 Hz (d) None of the above
(c) 3.98 nF (d) 0.884 μF

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1

EC/EE/IN Hinglish
PRACTICE SHEET 01
Subject : Analog Electronics
OP-AMP
1. Consider an ideal op-amp circuit shown in the figure,
with a closed loop voltage gain Av = 5 and output range
–10 V  vo  10 V. If the maximum current in any
resistor is limited to 50 A, then R1 and R2 are

(a) R1 = 40 k and R2 = 200 k

(a) 6 V (b) –6 V
(b) R1 = 160 k and R2 = 40 k (c) –10 V (d) 10 V
(c) R1 = 200 k and R2 = 40 k
(d) R1 = 40 k and R2 = 160 k 4. For the circuit shown below the true relation is

2. The input to the circuit shown below is vi = 2 sin t

mV. The current io is

(a) vo1 = vo2 (b) vo1 = –vo2

(c) vo = 2vo2 (d) 2vo1 = vo2
(a) –2 sin t A (b) –7 sin t A
(c) –5 sin t A (d) 0
Common Data for Q.5 and 6
Consider the following circuit
3. For the circuit shown below the value of vo is
2

 R2 1
(a)
R1  1  R2  
1  1  
 Aol  R1  
5. The output voltage vo is
(a) –12 V (b) 12 V Aol
(b)
Aol
(c) –18 V (d) 18 V 1
 R2 
1  
6. Input impedance seen by the voltage source is  R1 

(a) 5 k (b) 6/5 k  

 R2  1 
(c) 6 k (d)  (c)  
R1 1  A R2 
 ol
R1 
Common Data for Q.7 and 8
In the following difference amplifier circuit, the op- Aol
(d)
 R2 
amp is ideal. 1  
 R1 

Common Data for Q.10 and 11

Consider the op-amp circuit shown below.

vo
7. Voltage gain Ao  is
v1  v2
10. The ideal closed-loop voltage gain is
(a) 10 (b) –11 (a) 1 (b) –1
(c) –10 (d) 11 (c)  (d) 50

8. Input impedance seen at terminal v2 is 11. If open-loop gain is Aod = 999, then closed-loop gain
110
(a) k (b) 110 k is
11 (a) –0.999 (b) 0.999
(c) 100 k (d) 10 k (c) 1.001 (d) –1.001

9. Consider an ideal op-amp circuit shown in following 12. For the op-amp shown below open loop differential
figure. If open loop gain of op-amp is Aol, then closed gain is Aod = 103. The output voltage vo for vi = 2 V is
loop voltage gain Av is
3

(a) –1.996 (b) –1.998

(c) –2.004 (d) –2.006
(a) 0.0125% (b) 0.13%
(c) 0.930% (d) 0.0675%
13. For the given circuit, the output voltage is vo = 2.5 V
in response to input voltage vi = 5 V. The finite open-
17. In the following inverting amplifier shown in the
loop differential gain of the op-amp is
figure, the op-amp has an open loop gain of 92 dB,
the gain error of the amplifier is

(a) 5 × 104 (b) 250.5

(c) 2 × 104 (d) 501

(a) 0.0363% (b) 0.0275%

Common Data for Q.14 and 15
(c) 0.011% (d) 0.1%
Consider an op-amp circuit shown in figure below.

18. A voltage follower is built using an op-amp whose

open loop gain is Ao, gain error is
Ao 1
(a) (b)
1 Ao 1 Ao
1 Ao
(c) (d) None of these
Ao

14. If open loop gain of op-amp is Aol = 105, then closed

19. Consider an op-amp circuit shown in figure, with an
loop gain Aol is
open loop gain of Aol = 105 and open loop input
(a) 100 (b) 99.90
impedance Roi = 10 k. If output resistance of op-amp
(c) 98.90 (d) 99
is zero, than closed loop input impedance (Rif) at the
inverting terminal of op-amp is
15. If open loop gain decreases by 10%, then change in
closed loop gain will be
(a) 0.99% (b) 0.01%
(c) 1.01% (d) 10%

16. In the following non-inverting amplifier, the op-amp

has an open loop gain of 86 dB, gain error is
(a) Rif = 10 k (b) Rif = 1 k
(c) Rif = 40 k (d) Rif = 0.1 k
4

(d) 100 mV, –490 mV

20. In the following op-amp circuit, given that open loop
voltage gain Aol = 10 k. If output resistance of op- 23. In the circuit shown below, the op-amp slew rate is SR
amp is zero then closed-loop input impedance at the = 0.5 V/s. If the amplitude of input signal is 0.02 V,
non-inverting terminal of the op-amp is then the maximum frequency that may be used is

(a) 0.55 × 106 rad/s (b) 0.55 rad/s

(c) 1.1 × 106 rad/s (d) 1.1 rad/s
(a) 10 k (b) 25 k
(c) 0.1 M (d) 500 M 24. An audio amplifier is designed to have a small signal
bandwidth of 20 kHz. The open loop low-frequency
21. The voltage transfer characteristics of an operational voltage gain of the op-amp is 105 and unit gain
amplifier in shown in the figure. What are the values bandwidth is 1 MHz. What is the maximum closed-
of gain and offset voltage for this op-amp? loop voltage gain for this amplifier?
(a) 500 (b) 5 × 106
(c) 2 × 106 (d) 50

25. In following amplifier circuit, the op-amp is ideal. The

voltage v– at inverting terminal is

(a) 10, 1 mV (b) 7500, –1 mV

(c) 20, 2 mV (d) 7500, –2 mV

22. In the figure amplifier circuit, each op-amp has an

input offset voltage of 10 mV, op-amp is ideal
otherwise, output vo1 and vo2 for an input vin = 0 (a) 0 V (b) –1.2 V
respectively are (c) –3 V (d) 2.1 V

Common Data for Q.26 and 27

For an ideal op-amp circuit shown in the following
figure, the open loop gain of op-amp is AOL.

(a) 100 mV, –440 mV

(b) 110 mV, –500 mV
(c) 110 mV, –490 mV
5

designer wishes to realize the input resistance seen by

the small-signal source to be as large as possible,
while keeping the voltage gain between –10 and –25.
The upper limit on RF is 1 M. The value of R1 should
be

26. Closed loop gain will be

 R2 1
(a)
R1  1  R2  
1  1  
 Aol  R1  
(a) Infinity (b) 1 M
Aol (c) 100 k (d) 40 k
(b)
Aol
1
 R2 
1   29. For the circuit of figure with an ideal operational
 R1 
amplifier, the maximum phase shift of the output vout
Aol with reference to the input vin is
(c)
 R2 
1  
 R1 
Aol
(d)
 R 
1  Aol  1  2 
 R1 

27. For the circuit above in figure, op-amp has an open (a) 0° (b) –90°
loop 3-dB bandwidth of o, closed loop 3-dB (c) +90° (d) 180°
bandwidth is
  30. For the circuit shown below, the value of output
  voltage, vo is
(a) 1  Aol  
  R2  
o
  1  
  R1  

 
 A 
(b)  ol  o
1  R2 
 R1 

 R2 
(c) 1   o
 R1 
(a) vo = 10vi1 + 5va
o  R2 
(d) 1   (b) vo = 5vi1 + 10va
1  Aol  R1 
(c) vo = vi1 + va
(d) vo = 15(va – vi1)
28. Consider the inverting amplifier, using an ideal
operational amplifier shown in the figure. The
6

31. Consider the op-amp circuit shown below.

What is the value of current io?

(a) –27.5 sin t A
(b) –47.5 sin t A
vo
If the differential gain is Aol   30 and the (c) –37.5 sin t A
v2  v1
(d) None of the above
input resistance Ri = 50 k, then the value of resistor
R1 and R2 respectively are
34. In the following non-inverting amplifier, if the op-amp
(a) 750 k, 25 k has an open loop gain 1.5 × 105, then close loop gain
(b) 50 k, 1500 k of op-amp is
(c) 1.56 k, 46.87 k
(d) 25 k, 750 k

32. Consider the op-amp circuit shown below.

(a) 1.5 × 105 (b) 1

(c) 0.999 (d) 0.987

35. Consider an op-amp circuit shown in figure below,

v
The closed loop voltage gain is Av  o  8 . If the having an open loop gain of Aol = 105. The value of
vin
input resistance Rin is
input voltage vin = –1 and the maximum current in any
resistor is limited to 15 A, then the minimum value
of R1 and R2 are
(a) R1 = 533.33 k, R2 = 66.67 k
(b) R1 = 466.69 k, R2 = 66.67 k
(c) R1 = 66.67 k, R2 = 533.33 k
(d) R1 = 66.67 k, R2 = 466.69 k
(a) 100 k (b) 0.979
(c) 0.999  (d) Can’t determined
33. Consider the circuit shown in below.

36. Consider the amplifier circuit shown in figure below.

The op-amp is ideal.
7

What is the value of input and output resistance

(a) 120 k, 0 k (b) 12 k,  k
(c) 12 k, 0 k (d) 132 k,  k 39. Assume that the MOSFET is saturated, what is the
value of output current I0?
Common Data for Q.37 and 38 (a) –1 Amp (b) 0 Amp
Consider the ideal op-amp circuit shown in figure. (c) –1.25 mA (d) 1 Amp

40. For the value of ID obtained in previous question, what

is the minimum voltage VDD so that MOSFET remains
in saturation?
(a) 2 V (b) 3 V
(c) 2.5 V (d) 4.5 V

Common Data for Q.41 and 42

vo In the following amplifier circuit, the op-amp is ideal
37. What is the value of voltage gain Av  ?
vin1  vin 2
(a) 10 (b) –20
(c) –10 (d) 

38. What is the input resistance Rin2 seen from input

voltage vin2?
(a) 10 k (b) 110 k
(c) 105 k (d) 9.16 k

Common Data for Q.39 and 40

41. What is the value of current io in 50 k resistor?
Consider the circuit shown in the figure below. The
transistor parameters are: (a) 2 A (b) 1 A
VTN = 2.5 V (c) 5 A (d) 10 A
Kn = 0.25 A/V2
The op-amp is ideal. 42. What is the output impedance Ro seen at the terminal
of 50 k resistor?
(a) 10 k (b) 50 k
(c) 0  (d)  

43. In the circuit shown below, the op-amp parameters

are:
8

Input resistance Rid = 100 k

Open loop gain A = 105 46. Consider the amplifier circuit shown below, where Av
Output resistance Ro = 100  is the voltage gain of amplifier.

If the op-amp input current is neglected, what is the

value of vin?
(a) 10.1 × 10–5 V (b) 0.999 V vin
What is the value of input resistance, Rin  ?
(c) 10.0001 V (d) 9.999 × 10–5 V iin
Av R f
(a) (b) (1  Av ) R f
44. In the following amplifier circuit, the op-amp is ideal. 1  Av
Rf (1  Av )
(c) (d) Rf
1  Av Av

47. Consider the inverting amplifier shown in figure

below.

What is the value of current I1, I2 and I3 respectively?

(a) 10 mA, 1 A, 100 A
(b) 100 A, 100 A, 1 A
(c) 100 A, 100 A, 10 A
(d) 10 mA, 1 A, 100 A
If open loop gain Aol = 104, then the value of input
vin
45. In the amplifier circuit shown below, assume op-amp impedance Rin  is
iin
is ideal. A potentiometer is used to realize an
(a) 1 k (b) 999 
adjustable gain amplifier.
(c) 1001  (d) 11 k

48. Consider the circuit shown in figure below. Assume

op-amp is ideal.

If x is the potentiometer setting, the voltage gain

vo
Av  is
vin
1 1
(a) 1  (b) 1 
x x
1 1
(c) (d) 1 
x 1 x
9

The output voltage waveform is

(a)

What is the value of current io?

(b)
v v
(a)  in (b)  in
10 k Rf

vin
(c)  (d) None of the above
RL

49. Consider the circuit shown below. Assume ideal op-

amp is used. Input voltage waveform is also shown. (c)

(d)

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1

EC/EE/IN Hinglish
PRACTICE SHEET-01
Analog Electronics
Feedback Amplifier and Oscillators
1. A negative feedback amplifier has a closed loop gain 4. A compound transconductance amplifier is to be
of Af = 80 and an open loop gain of A = 105. If the open designed by connecting two basic feedback amplifier
loop gain decreases by 20% then the percent change in cascade. Which of two amplifier should be
in the closed loop gain and new value of close loop connected in cascade to form the compound
gain Af will be respectively transconductance amplifier?
(a) 0.016%, 80.01 (a)
(b) –0.016%, 79.99 (b)
(c) 0.004%, 79.68
(c)
(d) –0.004, 80.32
(d) (b) and (c)
2. A feedback amplifier shown in figure
5. Consider the current to voltage convertor circuit
shown below

Each basic amplifier state has an open loop gain of

A = 10. The closed loop gain is Af = 100
If the gain of each stage increased by 10%.
What is the percent change in the closed loop voltage The input resistance Rif is assumed to be small, the
v output resistance is Ro = 0 and the op-amp gain Az is
gain o is
vi large. If close loop transfer function is
(a) 2.55% increase (b) 2.55% decrease vo Az
Azf = =
(c) 1% increase (d) 0.9% increase in 1 +  Az
Then the value of  (feedback factor) is
3. Consider a basic amplifier circuit having input
1
resistance, Ri = 10 k and output resistance, Ro = 1 k (a) RF (b)
RF
and loop gain is T = 104. What are the maximum
RF Az
possible output resistance and minimum possible (c) (d)
Az RF
input resistance respectively.
(a) 1 , 104 k
(b)  , 0 
(c) 10–1 , 10 M
(d) 104k, 1 
2

6. Consider the circuit shown below. 9. Consider the amplifier circuit shown below.

This amplifier circuit will be

(a) Series-series (b) Series-shunt The type of amplifier circuit will be
(c) Shunt-series (d) Shunt-shunt (a) Series-series (b) Series-shunt
(c) Shunt-series (d) Shunt-shunt
7. Consider the circuit shown below.
Common Data for Q.10 to 11:
Consider the common emitter amplifier circuit shown
below.

The type of amplifier circuit is

(a) Series-series (b) Series-shunt
(c) Shunt-shunt (d) Shunt-series

8. Consider the amplifier circuit shown below.

10. The type of the amplifier circuit is

(a) Voltage amplifier
(b) Current amplifier
(c) Trans resistance amplifier
(d) Trans conductance amplifier

o
11. What is the trans resistance transfer function Aif =
is
The type of amplifier circuit is
(a) Series-series (b) Series-shunt (a) 59.7 (b) –8.75 k
(c) Shunt-series (d) Shunt-shunt (c) –59.7 k (d) 8.75 k
3

Common Data for Q.15 to 16:

12. Consider the circuit shown below Consider the amplifier circuit shown below.

15. The type of amplifier is

(a) Voltage amplifier
(b) Current amplifier
The type of amplifier is
(c) Transconductance amplifer
(a) Voltage amplifier
(d) Transresistance amplifier
(b) Current amplifier
(c) Transconductance amplifier
16. What is the value of feedback factor ()?
(d) Transresistance amplifier
1 1
(a) (b)
12 12R
Common Data for Q.13 to 14:
3 3
Consider the circuit shown in figure below. (c) (d)
4R 4

17. Consider the circuit shown below.

13. The type of amplifier is

(a) Voltage amplifier
(b) Current amplifier
(c) Transconductance amplifier
(d) Trans resistance amplifier The type of amplifier and feedback factor of the
amplifier are
14. What is the value of feedback factor ()? R
(a) Series-Voltage,  = −
1 5
(a) − (b) −3R
3R R
(b) Series-Current,  = −
3 2R 4
(c) − (d) −
2R 3 R
(c) Shunt-Current,  = −
4
R
(d) Series-Current,  = −
5
4

Common Data for Q.18 to 19: Common Data for Q.22 to 23:
Consider the circuit shown below. Consider the oscillator circuit shown below.

22. For the given oscillator circuit, what is the frequency

of oscillation (Hz) according to Barkhausen criterion?
1 1
18. Applying the Barkhausen criterion to the circuit, what (a) (b)
2 LC 2 4LC
is the minimum value of K required for oscillation?
1 1
(a) 4 (b) 1/2 (c) (d)
 LC LC
(c) 2 (d) 3

23. What is the minimum gain magnitude |A| required for

19. For minimum value of 'K' for oscillation, the
oscillation?
frequency of oscillation is
(a) 2 (b) 3
1 1
(a) (b) (c) 1 (d) 4
2 2 RC 2 3 RC
1 1 24. Consider the astable multivibrator shown below
(c) (d)
2 4 RC 2RC
(Assume that the output values of the comparator are
Common Data for Q.20 to 21: 0 and V)
Consider the oscillator circuit shown below.

20. For the oscillator circuit, what is the frequency of

oscillation according to the Barkhausen criterion?
R R For what threshold values of vC does the schmitt
(a) (b)
2 L 3 L trigger change state?
R R V V V
(c) (d) (a) and − (b) and 0
4 L L 2 2 2
V 2V V
(c) and (d) and 0
21. For oscillation, what is the minimum value of A? 3 3 3
(a) 4 (b) 3
(c) 5 (d) 2
5

25. Consider the modified astable multivibrator shown 28. A relaxation oscillator is made using Op-amp as
below. shown in figure. The supply voltages of the Op-amps
are  12V. The voltage waveform at point P will be

Assume diodes D1 and D2 are ideal. For what threshold

values of vC does the schmitt trigger change state?
2 1 1 1
(a) VCC and VCC (b) VCC and − VCC
3 3 3 3
(a)
2 2
(c) VCC and − VCC (d) VCC and −VCC
3 3

26. What is the sensitivity of the closed loop input

resistance Rin of the series-shunt feedback amplifier
(b)
with respect to changes in open gain A?
(Assume that input resistance of amplifier is R without
feedback and A >> 1)
(a) 1 (b) –1
(c) 0 (d) 
(c)

27. The nature of feedback in the op-amp circuit shown is

(d)

(a) Current-Current feedback

(b) Voltage-Voltage feedback
(c) Current-Voltage feedback
(d) Voltage-Current feedback
6

Common Data for Q.29 to 30: Common Data for Q.32 to 33:
The following network is used as a feedback circuit in an Consider the Wien-bridge oscillator shown in figure
oscillator shown in figure to generate sinusoidal below.
oscillations. Assuming that the operation amplifier is ideal.
Given that R = 10 k and C = 100 pF.

32. The frequency of oscillation is

1 1
(a) (b)
2 RA RB C AC B RA RB C AC B
1 1
(c) (d)
2R A RB C AC B RA RB C ACB
Vx
29. The transfer function of the first network is
Vz 33. Which of the following condition applies for the
jCR sustained oscillation?
(a)
(1 −  R C 2 ) + j 3CR
2 2
R2 RA C B R1 RA C B
(a) = + (b) = +
jCR R1 RB C A R2 RB C A
(b) 2 2
(1 −  R C 2 ) + j 2CR (c)
R2 RB C B
= + (d)
R2 RA C A
= +
R1 RA C A R1 RB C B
jCR
(c)
1 + j 3CR
jCR 34. Consider the circuit shown in the figure below.
(d)
1 + j 2CR

30. The frequency of oscillation will be

1 1
(a) (b)
RC 2RC
1
(c) (d) None of these
4RC

31. Value of RF is
(a) 1 k (b) 4 k For sustained oscillation, the value of R2/R1 must be
(c) 2 k (d) 8 k equal to
(a) 2 (b) 0.5
(c) 3 (d) 1
7

35. An op-amp has an open loop low frequency gain of

A = 105 and an open loop 3 dB frequency fH = 4 Hz. If
an inverting amplifier with a closed loop low
frequency gain of |Avf| = 50 uses this op-amp. What is
the value of the closed loop bandwidth (in kHz).

36. Consider the feedback amplifier circuit shown below.

what is the feedback factor () of the circuit?

Common Data for Q.40 and 41:

Consider the phase shift oscillator shown in figure with
parameters R = 4 k and C = 10 nF.

37. For the following phase-shift oscillator, frequency of 40. What is the frequency of oscillation (in kHz)?
oscillation is nearly equal to ______ kHz.
41. The required value of R2 for the oscillation is
________ k.

42. The Hartley oscillator shown in figure. The natural

inductance between L1 and L2 is M = 20 H, what is
the value of frequency for oscillations (in kHz)?

38. The phase shift oscillator shown below operate at

f = 80 kHz. the value of resistance RF is _______ k.

39. The value of C required for sinusoidal oscillation of

frequency 1 kHz in the following circuit is _______
F.
8

Common Data for Q.43 and 44: 45. Consider the Colpitts oscillator circuit shown in figure
Consider the phase shift oscillator shown in figure with below with parameters L = 1 H, C1 = 1 nF, C2 = 1 nF,
parameter C = 100 pF, R = 10 k. R = 4 k. What is the oscillation frequency (in MHz)

43. What is the oscillation frequency (in kHz)?

44. The required value of R2 for the oscillation is 46. For the Hartely oscillator shown in figure, what is the
_________ kHz. value of oscillation frequency (in kHz)?

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